GaN and AlGaN high-voltage rectifiers grown by metal-organic chemical-vapor deposition

In this paper, we report the study of the electrical characteristics of GaN and AlGaN vertical p-i-n junctions and Schottky rectifiers grown on both sapphire and SiC substrates by metal-organic chemical-vapor deposition. For GaN p-i-n rectifiers grown on SiC with a relatively thin “i” region of 2 μm, a breakdown voltage over 400 V, and forward voltage as low as 4.5 V at 100 A/cm² are exhibited for a 60-μm-diameter device. A GaN Schottky diode with a 2-μm-thick undoped layer exhibits a blocking voltage in excess of ∼230 V at a reverse-leakage current density below 1 mA/cm², and a forward-voltage drop of 3.5 V at a current density of 100 A/cm². It has been found that with the same device structure and process approach, the leakage current of a device grown on a SiC substrate is much lower than a device grown on a sapphire substrate. The use of Mg ion implantation for p-guard rings as planar-edge terminations in mesageometry GaN Schottky rectifiers has also been studied.     

Recording of volume hologram using a beam pattern from taperedoptical fiber

A photorefractive volume hologram was recorded and probed using light diffracted from a tapered optical fiber as a reference beam. A single-mode fiber (SMF) was chemically etched and tapered to give a complicated beam pattern, and it is shown that the tapered optical fiber can be utilized to increase the storage density of the volume hologram. Spatial selectivity of the volume hologram with this method was increased by two times compared to the normal SMF referencing, which is due to the fact that the complicated beam pattern has little correlation with its shifted version     

Evaluating the impact of CASE: an empirical comparison of retrospective and cross-sectional survey approaches

The purpose of this paper is to evaluate two methods of assessing the productivity and quality impact of Computer Aided Software Engineering (CASE) and Fourth Generation Language (4GL) technologies: (1) by the retrospective method; and (2) the cross-sectional method. Both methods involve the use of questionnaire surveys. Developers' perceptions depend on the context in which they are expressed and this includes expectations about the effectiveness of a given software product. Consequently, it is generally not reliable to base inferences about the relative merits of CASE and 4GLs on a cross-sectional comparison of two separate samples of users. The retrospective method that requires each respondent to directly compare different products is shown to be more reliable. However, there may be scope to employ cross-sectional comparisons of the findings from different samples where both sets of respondents use the same reference point for their judgements, and where numerical rather than verbal rating scales are used to measure perceptions.     

提高前馈神经网络推广能力的若干实际方法

提高前馈神经网络的推广能力是深受关注的问题，本文根据我们最近提出了一个网络有效推广的准则，从提高网络特征提取能力，分类能力和修改神经元激活函数等几方面给出了若干实际方案，我们在任意手写数字识别问题上的实验结果证实了这些方法的有效性。     

一种多晶硅高温压力传感器

制作压力传感器时，在二氧化硅层上淀积多晶硅膜，既可利用优良的机械特性，又可保证压敏电阻与衬底间具有良好的绝缘性，由此可大大提高器件的温度特性。介绍了一种多晶硅压力传感器的原理和设计。实验结果表明，这类传感器具有灵敏度好，精度高等特点，电路工作范围为０－２５０℃，且具有良好的温度稳定性。     

高氧化态（Ⅱ─Ⅳ）三核金属簇合物构型的人工神经网络判别方法

本文运用一典型的人工神经网络模型─“反向传播”模型，对高氧化态（Ⅱ─Ⅳ）三核金属簇合物的构型分布进行了分析，得到了较好的分类、预报结果为化合物结构分析提供了新的工具。     

Presupposition failure — A comedy of errors

Presuppositions of utterances are the pieces of information you convey with an utterance no matter whether your utterance is true or not. We first study presupposition in a very simple framework of updating propositional information, with examples of how presuppositions of complex propositional updates can be calculated. Next we move on to presuppositions and quantification, in the context of a dynamic version of predicate logic, suitably modified to allow for presupposition failure. In both the propositional and the quantificational case, presupposition failure can be viewed as error abortion of procedures. Thus, a dynamic assertion logic which describes the preconditions for error abortion is the suitable tool for analysing presupposition.     

SiC（w）／TZP＋mullite陶瓷复合材料界面和组成设计与力学性能

本文从理论上分析了ＳｉＣ（ｗ）ＴＺＰ＋ｍｕｌｌｉｔｅ（ｐ）复合材料界面残余热应力及其在基质内的分布规律。提出在ＳｉＣ（ｗ）表面涂复Ａｌ２Ｏ３和在ＰＺＴ中加入ｍｕｌｌｉｔｅ（ｐ）联合作用来降低晶须／基质界面残余热应力的界面设计方案，导出ＳｉＣ（ｗ）和ｍｕｌｌｉｔｅ（ｐ）协同补强ＰＺＴ的匹配条件。制备了ＳｉＣ（ｗ）／ＴＺＰ＋ｍｕｌｌｉｔｅ（ｐ）复合材料并了ＳｉＣ（ｗ）表面涂层Ａｌ２Ｏ３厚度和ＳｉＣ（ｗ