多标准视频硬件解码器的存储器地址映射方法

提出了一种支持多标准视频的存储器地址映射方法,用一个简洁的公式把视频图像映射到DDR SDRAM的存储空间.该方法兼顾运动补偿模块、去块效应滤波模块(或重建模块)和显示模块的不同需求特点,通过充分减少DDR SDRAM非读写命令的额外延时,达到较高的存储器接口效率.     

TD-SCDMA系统终端中的GMM功能实体研究

移动性管理(MM,MobilityManagement)是层3的一个子层,它主要完成与用户的移动性相关的一些功能。根据业务的分域划分,MM子层被分为支持CS模式的MM实体和支持PS模式的GMM实体。本文通过对GMM一般过程和特殊过程的描述,介绍了TD-SCDMA系统终端GMM实体的功能及其实现过程。     

复合材料空心飞轮多环套装整体变形及应力简化精细分析

采用多环过盈装配是解决复合材料飞轮径向强度过低的有效途径之一。本文作者采用平面应力简化模型,提出了计及过盈配合后变形导致实际过盈量增大计算飞轮套装后的初终应力分布的方法;提出了基于叠加原理计算多环过盈装配旋转飞轮应力的方法;提出了保证飞轮旋转时配合界面不脱离的相关临界转速的概念和计算方法。算例分析表明:过盈配合后的变形对初终应力的影响不能忽略;过盈量和套装环数与飞轮的初终应力和相关临界转速有密切的关系。     

Synthesis of ZSM‐5 Films and Monoliths with Bimodal Micro/Mesoscopic Structures

A route to synthesize ZSM‐5 crystals with a bimodal micro/mesoscopic pore system has been developed in this study; the successful incorporation of the mesopores within the ZSM‐5 structure was performed using tetrapropylammonium hydroxide (TPAOH)‐impregnated mesoporous materials containing carbon nanotubes in the pores, which were encapsulated in the ZSM‐5 crystals during a solid rearrangement process within the framework. Such mesoporous ZSM‐5 zeolites can be readily obtained as powders, thin films, or monoliths.     

Derivation of a second-order switching surface in the boundary control of buck converters

A second-order switching surface in the boundary control of buck converters is derived in this letter. The formulated switching surface can make the overall converter exhibit better steady-state and transient behaviors than the one with a first-order switching surface. The switching surface is derived by estimating the state trajectory movement after a switching action, resulting in a high state trajectory velocity along the switching surface. This phenomenon accelerates the trajectory moving toward the target operating point. The proposed control scheme has been successfully applied to a 120-W buck converter. The large-signal performance and a comparison with the first-order switching surface have been studied.     

Inside Front Cover: The Elastic Properties and Plastic Behavior of Two‐Dimensional Polymer Structures Fabricated by Laser Interference Lithography (Adv. Funct. Mater. 10/2006)

The probing of the micromechanical properties within a two‐dimensional polymer structure with sixfold symmetry fabricated via interference lithography reveals a nonuniform spatial distribution in the elastic modulus “imprinted” with an interference pattern in work reported by Tsukruk, Thomas, and co‐workers on p. 1324. The image prepared by M. Lemieux and T. Gorishnyy shows how the interference pattern is formed by three laser beams and is transferred to the solid polymer structure. The elastic and plastic properties within a two‐dimensional polymer (SU8) structure with sixfold symmetry fabricated via interference lithography are presented. There is a nonuniform spatial distribution in the elastic modulus, with a higher elastic modulus obtained for nodes (brightest regions in the laser interference pattern) and a lower elastic modulus for beams (darkest regions in the laser interference pattern) of the photopatterned films. We suggest that such a nonuniformity and unusual plastic behavior are related to the variable material properties “imprinted” by the interference pattern.     

普通稠油油藏启动压力梯度求解方法与应用

利用微观尺度管流模型,结合普通稠油流变特征,提出了在考虑稠油流变性条件下微观启动压力梯度计算方法.对渤海渤中18块不同渗透率岩心进行室内驱替实验,通过对实验数据的回归分析,得到不同粘度普通稠油油藏启动压力梯度与地层平均渗透率关系,并绘制了启动压力梯度的图版.将研究结果应用于普通稠油油藏,给出了利用启动压力梯度确定极限泄油半径及合理井距的理论计算方法.     

微桥法镍膜的弹性模量和残余应力测量

利用MEMS技术制作了不同尺寸的镍(Ni)膜微桥结构样品。采用纳米压痕仪XP系统测量了微桥载荷与位移的关系,并结合微桥力学理论模型得到了两种不同尺寸的Ni膜的弹性模量和残余应力。结果表明,两种不同尺寸的Ni膜的弹性模量结果一致,为190 GPa左右,但是残余应力变化较大。与采用纳米压痕仪直接测得的带有硅(Si)基底的Ni膜弹性模量186.8 7.5 GPa相比较,两者符合较好。     

Optimization of Selective Epitaxial Growth of Silicon in LPCVD

Selective epitaxial growth (SEG) of silicon has attracted considerable attention for its good electrical properties and advantages in building microstructures in high‐density devices. However, SEG problems, such as an unclear process window, selectivity loss, and nonuniformity have often made application difficult. In our study, we derived processing diagrams for SEG from thermodynamics on gas‐phase reactions so that we could predict the SEG process zone for low pressure chemical vapor deposition. In addition, with the help of both the concept of the effective supersaturation ratio and three kinds of E‐beam patterns, we evaluated and controlled selectivity loss and nonuniformity in SEG, which is affected by the loading effect. To optimize the SEG process, we propose two practical methods: One deals with cleaning the wafer, and the other involves inserting dummy active patterns into the wide insulator to prevent the silicon from nucleating.