Quantitative Evaluation Method for Etch Sidewall Profile of Through‐Silicon Vias (TSVs)

Through‐silicon via (TSV) technology provides much of the benefits seen in advanced packaging, such as threedimensional integrated circuits and 3D packaging, with shorter interconnection paths for homo‐ and heterogeneous device integration. In TSV, a destructive cross‐sectional analysis of an image from a scanning electron microscope is the most frequently used method for quality control purposes. We propose a quantitative evaluation method for TSV etch profiles whereby we consider sidewall angle, curvature profile, undercut, and scallop. A weighted sum of the four evaluated parameters, nominally total score (TS), is suggested for the numerical evaluation of an individual TSV profile. Uniformity, defined by the ratio of the standard deviation and average of the parameters that comprise TS, is suggested for the evaluation of wafer‐to‐wafer variation in volume manufacturing.     

Control of Crystal Growth toward Scalable Fabrication of Perovskite Solar Cells

With the impressive record power conversion efficiency (PCE) of perovskite solar cells exceeding 23%, research focus now shifts onto issues closely related to commercialization. One of the critical hurdles is to minimize the cell‐to‐module PCE loss while the device is being developed on a large scale. Since a solution‐based spin‐coating process is limited to scalability, establishment of a scalable deposition process of perovskite layers is a prerequisite for large‐area perovskite solar modules. Herein, this paper reports on the recent progress of large‐area perovskite solar cells. A deeper understanding of the crystallization of perovskite films is indeed essential for large‐area perovskite film formation. Various large‐area coating methods are proposed including blade, slot‐die, evaporation, and post‐treatment, where blade‐coating and gas post‐treatment have so far demonstrated better PCEs for an area larger than 10 cm². However, PCE loss rate is estimated to be 1.4 × 10^?2% cm^?2, which is 82 and 3.5 times higher than crystalline Si (1.7 × 10^?4% cm^?2) and thin film technologies (≈4 × 10^?3% cm^?2) respectively. Therefore, minimizing PCE loss upon scaling‐up is expected to lead to PCE over 20% in case of cell efficiency of >23%.     

High Areal Capacitance of N‐Doped Graphene Synthesized by Arc Discharge

The lack of cost effective, industrial‐scale production methods hinders the widespread applications of graphene materials. In spite of its applicability in the mass production of graphene flakes, arc discharge has not received considerable attention because of its inability to control the synthesis and heteroatom doping. In this study, a facile approach is proposed for improving doping efficiency in N‐doped graphene synthesis through arc discharge by utilizing anodic carbon fillers. Compared to the N‐doped graphene (1–1.5% N) synthesized via the arc process according to previous literature, the resulting graphene flakes show a remarkably increased doping level (≈3.5% N) with noticeable graphitic N enrichment, which is rarely achieved by the conventional process, while simultaneously retaining high turbostratic crystallinity. The electrolyte ion storage of synthesized materials is examined in which synthesized N‐doped graphene material exhibits a remarkable area normalized capacitance of 63 µF cm^?2. The surprisingly high areal capacitance, which is superior to that of most carbon materials, is attributed to the synergistic effect of extrinsic pseudocapacitance, high crystallinity, and abundance of exposed graphene edges. These results highlight the great potentials of N‐doped graphene flakes produced by arc discharge in graphene‐based supercapacitors, along with well‐studied active exfoliated graphene and reduced graphene oxide.     

End‐to‐end security‐reliability analysis of multi‐hop cognitive relaying protocol with TAS/SC‐based primary communication,total interference constraint and asymmetric fading channels

In this paper, we analyze the tradeoff between outage probability (OP) and intercept probability (IP) for a multi‐hop relaying scheme in cognitive radio (CR) networks. In the proposed protocol, a multi‐antenna primary transmitter (PT) communicates with a multi‐antenna primary receiver (PR), using transmit antenna selection (TAS) / selection combining (SC) technique, while a secondary source attempts to transmit its data to a secondary destination via a multi‐hop approach in presence of a secondary eavesdropper. The secondary transmitters such as source and relays have to adjust their transmit power to satisfy total interference constraint given by PR. We consider an asymmetric fading channel model, where the secondary channels are Rician fading, while the remaining ones experience the Rayleigh fading. Moreover, an optimal interference allocation method is proposed to minimize OP of the primary network. For the secondary network, we derive exact expressions of end‐to‐end OP and IP which are verified by Monte Carlo simulations.     

λ/64‐spaced compact ESPAR antenna via analog RF switches for a single RF chain MIMO system

In this study, an electronically steerable parasitic array radiator (ESPAR) antenna via analog radio frequency (RF) switches for a single RF chain MIMO system is presented. The proposed antenna elements are spaced at λ/64, and the antenna size is miniaturized via a dielectric radome. The optimum reactance load value is calculated via the beamforming load search algorithm. A switch simplifies the design and implementation of the reactance loads and does not require additional complex antenna matching circuits. The measured impedance bandwidth of the proposed ESPAR antenna is 1,500 MHz (1.75 GHz–3.25 GHz). The proposed antenna exhibits a beam pattern that is reconfigurable at 2.48 GHz due to changes in the reactance value, and the measured peak antenna gain is 4.8 dBi. The reception performance is measured by using a 4  4 BPSK signal. The measured average SNR is 17 dB when using the proposed ESPAR antenna as a transmitter, and the average SNR is 16.7 dB when using a four‐conventional monopole antenna.     

Improved Update Step for Scalable Video Coding in Video Surveillance

Many evolving video services and applications for intelligent security systems require reliable transmission of high quality video to diverse clients over heterogeneous networks using available system resources. Scalable video coding (SVC) is one of the emerging video compression technologies with such potential capabilities. Advances in lifting-based motion-compensated temporal filtering (MCTF) have enabled highly efficient and flexible spatial, temporal, signal-to-noise ratio (SNR), and complexity scalability to be realized over a wide range of bit rates. In this paper, we present an algorithm to improve the update step of MCTF, which serves as an important informative step for the coding performance of SVC. A novel update-step algorithm, which takes advantage of the chrominance information of the video sequence and the correlation of the motion vectors (MVs) of the neighboring blocks as well as the correlation of the derived update MVs in the low-pass frames, is proposed to improve update step of MCTF by (1) computing correct update motion information, (2) generating correct amount of energy contained in the high-pass frames. Experimental results show that the proposed algorithm can significantly improve the quality of the reconstructed video sequence in visual quality.

Three-dimensional localization of cochlear implant electrodes using epipolar stereophotogrammetry

Three-dimensional (3-D) localization of individual cochlear implant electrodes within the inner ear is of importance for modeling the electrical field of the cochlea, designing the electrode array, and programming the associated speech processor. A 3-D reconstruction method of cochlear implant electrodes is proposed to localize individual electrodes from two X-ray views in combination with the spiral computed tomography technique. By adapting epipolar geometry to the configuration of an X-ray imaging system, we estimate individual electrode locations in the least square sense without using a patient attachment required by an existing stereophotogrammetry technique. Furthermore, our method does not require any knowledge of the intrinsic and extrinsic parameters of the imaging system. The performance of our method is studied in numerical simulation and with patient data and is found to be sufficiently accurate for clinical use. The maximum root mean-square errors measured are 0.0445 and 0.214 mm for numerical simulation and patient data, respectively.     

The implementation of TS MAC (transmitter station monitor, alarmand control) system for digital DBS system

The implementation of TS MAC system for KOREASAT DBS (direct broadcast satellite) system is presented. This TS MAC controls and monitors the status of the TS equipment and gathers the alarm for them. The advantage of this system is the center-concentrated, real time processing, remote control, and object oriented module decomposing     

A load torque compensation scheme under the speed measurement delay

The average speed detection method involves a measurement delay, which can cause a serious instability problem to the unknown load torque observer. The instability can be cured by inserting an artificial delay into the torque-filtering path of the observer. Also, by utilizing the concept of the phase lead compensator, we propose a method of designing an arbitrary high-order low-pass filter (Q filter). Through the results of simulation and experiments, we show that our proposed method yields more robust and improved results than the conventional load torque observer     

Lateral epitaxial overgrowth of GaN films on SiO2 areas via metalorganic vapor phase epitaxy

Lateral epitaxial growth and coalescence of GaN regions over SiO₂ masks previously deposited on GaN/AlN/6H-SiC(0001) substrates and containing 3 μm wide rectangular windows spaced 7 μm apart have been achieved. The extent and microstructural characteristics of these regions of lateral overgrowth were a complex function of stripe orientation, growth temperature, and triethylgallium (TEG) flow rate. The most successful growths were obtained from stripes oriented along 〈1 00〉 at 1100°C and a TEG flow rate of 26 μmol/min. A density of ∼10⁹ cm⁻² threading dislocations, originating from the underlying GaN/AlN interface, were contained in the GaN grown in the window regions. The overgrowth regions, by contrast, contained a very low density of dislocations. The surfaces of the coalesced layers had a terrace structure and an average root mean square roughness of 0.26 nm.