A 20-ps Si bipolar IC using advanced super self-aligned processtechnology with collector ion implantation

A super self-aligned process technology, SST-1B, which is an advanced version of the previously proposed SST-1A in high-speed Si bipolar LSIs is discussed. A selectively ion-implanted collector (SIC) process and bird's-beak-free isolation process are utilized. The SIC process is designed to improve shallow base-collector profiles in the intrinsic region. It reduces base width and intrinsic base resistance, and suppresses the base push-out effect (Kirk's effect) in high-current operations. The SIC profile is easily controlled by 150-200 keV phosphorous ion implantation at the base-collector junction. Using these processes, SST-1B has achieved a high cutoff frequency of 21.1 to 25.7 GHz and a fast switching delay of 20.5 ps/G for nonthreshold logic and 34.1 ps/G for emitter-coupled logic. SST-1B has potential applications to 50-ps/G logic LSIs and 10-GHz SSIs. Device simulation indicates that it is possible to achieve a cutoff frequency of 40-50 GHz in a future scaled-down Si bipolar transistor with a 40-nm base and graded collector     

A 146-mm/sup 2/ 8-gb multi-level NAND flash memory with 70-nm CMOS technology

An 8-Gb multi-level NAND Flash memory with 4-level programmed cells has been developed successfully. The cost-effective small chip has been fabricated in 70-nm CMOS technology. To decrease the chip size, a one-sided pad arrangement with compacted core architecture and a block address expansion scheme without block redundancy replacement have been introduced. With these methods, the chip size has been reduced to 146 mm/sup 2/, which is 4.9% smaller than the conventional chip. In terms of performance, the program throughput reaches 6 MB/s at 4-KB page operation, which is significantly faster than previously reported and very competitive with binary Flash memories. This high performance has been achieved by the combination of the multi-level cell (MLC) programming with write caches and with the program voltage compensation technique for neighboring select transistors. The read throughput reaches 60 MB/s using 16I/O configuration.     

Feasibility study on 1.6 μm continuous-wave modulation laser absorption spectrometer system for measurement of global CO2 concentration from a satellite

A feasibility study is carried out on a 1.6 μm continuous-wave modulation laser absorption spectrometer system for measurement of global CO(2)concentration from a satellite. The studies are performed for wavelength selection and both systematic and random error analyses. The systematic error in the differential absorption optical depth (DAOD) is mainly caused by the temperature estimation error, surface pressure estimation error, altitude estimation error, and ON wavelength instability. The systematic errors caused by unwanted backscattering from background aerosols and dust aerosols can be reduced to less than 0.26% by using a modulation frequency of around 200 kHz, when backscatter coefficients of these unwanted backscattering have a simple profile on altitude. The influence of backscattering from cirrus clouds is much larger than that of dust aerosols. The transmission power required to reduce the random error in the DAOD to 0.26% is determined by the signal-to-noise ratio and the carrier-to-noise ratio calculations. For a satellite altitude of 400 km and receiving aperture diameter of 1 m, the required transmission power is approximately 18 W and 70 W when albedo is 0.31 and 0.08, respectively; the total measurement time in this case is 4 s, which corresponds to a horizontal resolution of 28 km.     

Formation and magnetic properties of γ-Fe2O3particles surface modified with crystallized cobalt-ferrite

Acicular γ-Fe2O3particles were heated at 90°C in alkali solution containing Co²⁺and Fe²⁺with Co²⁺/Fe²⁺ratio of 0.5. The coercivity of resultant particles increased linearly with increasing the Co²⁺content, and the coercivity of 900 Oe was obtained for the particles with Co²⁺content of 7 wt%. The shape of the particles is acicular, and an appreciable variation of morphology by the treatment in alkali solution was not observed. Cobalt-ferrite was expected to crystallize epitaxially on the surface of γ-Fe2O3particles, and the increase of coercivity was attributed to the magnetic anisotropy of the cobalt-ferrite. A variation of coercivity by annealing at 60°C and print-through were small compared with those of the particles in which iron were homogeneously substituted by cobalt ions. Such stability was explained by considering that a very high concentration of cobalt ions exist only on the surface of γ-Fe2O3particles, and the migration of cobalt ions is extremely difficult.     

Characteristics of mutations in the p53 gene of oral squamous-cell carcinomas associated with betel-quid chewing in Sri Lanka

The PCR copy of the ribR gene of Bacillus subtilis was subcloned in Escherichia coli cells under the control of the phage T7 inducible promoter. The polypeptide of 26 kDa corresponding to the 690-bp gene is the product of the ribR gene. The protein encoded by the ribR gene is flavokinase, and the riboflavin-reduced form is the substrate for it.     

Pulse broadening due to higher order dispersion and itstransmission limit

If we are to significantly increase the transmission speed of optical networks, the impact of higher order dispersion must be clarified. This paper gives general expressions that describe pulse broadening due to even and odd higher order dispersion in a single-mode fiber. The intrinsic impulsive responses for even order dispersion (beyond the second order) are characterized by symmetrical waveforms with long trailing skirts, whereas the responses for odd orders show asymmetrical strongly oscillating waveforms. The transmission limits are also analytically obtained for each higher nth order that induces intersymbol interference. Transmission lengths are limited by the factor of 1/B₀ⁿ where B₀ is the bit rate and n is the dispersion order