Theoretical calculation of lasing spectra of quantum-dot lasers:effect of homogeneous broadening of optical gain

A theoretical calculation is presented for the effect of homogeneous broadening of optical gain on lasing spectra of quantum-dot lasers. Based on a coupled set of rate equations considering both the size distribution of quantum dots and a series of longitudinal cavity modes, we show that dots with different energies start lasing independently due to their spatial localization when the gain spectrum is a delta-like function, and that the dot ensemble contributes to a narrow-line lasing collectively under large homogeneous broadening. The result explains quite excellently the experimental lasing spectra found in self-assembled InGaAs-GaAs quantum-dot lasers     

Basis Translation Matrix between Two Isomorphic Extension Fields via Optimal Normal Basis

This paper proposes a method for generating a basis translation matrix between isomorphic extension fields. To generate a basis translation matrix, we need the equality correspondence of a basis between the isomorphic extension fields. Consider an extension field F_p^m where p is characteristic. As a brute force method, when p^m is small, we can check the equality correspondence by using the minimal polynomial of a basis element; however, when p^m is large, it becomes too difficult. The proposed methods are based on the fact that Type I and Type II optimal normal bases (ONBs) can be easily identified in each isomorphic extension field. The proposed methods efficiently use Type I and Type II ONBs and can generate a pair of basis translation matrices within 15 ms on Pentium 4 (3.6 GHz) when mlog₂ p = 160.     

A 1.25-inch 60-frames/s 8.3-M-pixel digital-output CMOS image sensor

The ultrahigh-definition television (UDTV) camera system requires an image sensor having four times higher resolution and two times higher frame rate than the conventional HDTV systems. Also, an image sensor with a small optical format and low power consumption is required for practical UDTV camera systems. To respond to these requirements, we have developed an 8.3-M-pixel digital-output CMOS active pixel sensor (APS) for the UDTV application. It features an optical format of 1.25inch, low power consumption of less than 600 mW at dark, while reproducing a low-noise, 60-frames/s progressive scan image. The image sensor is equipped with 1920 on-chip 10-bit analog-to-digital converters and outputs digital data stream through 16 parallel output ports. Design considerations to reproduce a low-noise, high-resolution image at high frame rate of 60 fps are described. Implementation and experimental results of the 8.3-M-pixel CMOS APS are presented.     

Low-driving-current temperature-stable 10 Gbit/s operation of p-doped 1.3 /spl mu/m quantum dot lasers between 20 and 90/spl deg/C

Low-driving-current temperature-stable 10 Gbit/s direct modulation was achieved for optimised 200 mum-long short cavity 1.3 mum p-doped quantum dot lasers. Driving conditions were 25.2 mA_p-p for the modulation current and 23.4 mA for the bias current through the whole temperature range from 20 to 90degC     

Design of a 1-MW,CW coaxial gyrotron with two gaussian beam outputs

The design of a 170 GHz, 1 MW-CW gyrotron for electron cyclotron heating of nuclear fusion plasmas is presented. The designed gyrotron incorporates a coaxial cavity to reduce mode competition, and a coaxial electron gun to support the cavity inner conductor. A new mode converter splits the generated wave into two beams and radiates them in different directions. The radiated beams are transmitted to two output windows through two mirror systems, being transformed into Gaussian-like beams. A single-stage depressed collector improves the overall efficiency of the gyrotron and reduces the heat flux to the collector surface.     

A rod matrix compensator for small-field intensity modulated radiation therapy: a preliminary phantom study

A compensator made of a tungsten-based rod matrix has been proposed for small-field intensity modulated radiation therapy. The compensator was attached to a 6 MV linac gantry head. The proposed compensator could modulate the X-ray intensity with a step of 10% and a minimum transmission of 2.5%.     

A 98 mm2 die size 3.3-V 64-Mb flash memory with FN-NORtype four-level cell

In order to realize high-capacity and low-cost flash memory, we have developed a 64-Mb flash memory with multilevel cell operation scheme. The 64-Mb flash memory has been achieved in a 98 mm² die size by using four-level per cell operation scheme, NOR type cell array, and 0.4-μm CMOS technology. Using an FN type program/erase cell allows a single 3.3 V supply voltage. In order to establish fast programming operation using Fowler-Nordheim (FN)-NOR type memory cell, we have developed a highly parallel multilevel programming technology. The drain voltage controlled multilevel programming (DCMP) scheme, the parallel multilevel verify (PMV) circuit, and the compact multilevel sense-amplifier (CMS) have been implemented to achieve 128 b parallel programming and 6.3 μs/Byte programming speed     

Quasi-optical waveguide-mode converters using a pair of phase correction mirrors

This paper describes a quasi-optical method for the conversion of modes transmitted through highly oversized circular waveguides. A waveguide-mode is radiated once from a waveguide cut in the form of a radiation beam, which is then properly shaped by two curved mirrors and directed back into the waveguide. The curved mirror shapes are iteratively and automatically determined for given propagation distances using the design technique for phase correction mirrors. The proposed method gives favorable results in designing a waveguide expander/reducer, a TE₀₁-TE₀₂ mode converter, and a TE₀₁-HE₁₁ mode converter.     

Design and VLSI evaluation of a high-speed cellular array divider with a selection function

In recent years, very fast dividers have been required for the real-time application of digital signal processing, robot control, and the like. This paper proposes a high-speed cellular array divider with a selection function that is based on the non-restoring algorithm and can deal with both fixed-point and negative operands in two's complement form. This divider uses new techniques that can generate in parallel both the quotient bit of one row and a partial remainder and CLS bit of the next row. The delay time of the proposed divider is calculated in terms of a delay of one unit such as a NAND gate. Finally, by using PARTHENON, a CAD (computer-aided design) system for VLSI, this divider is designed and evaluated. As a result, elimination of the delay time for even rows becomes possible. Thus, the delay time can be decreased to approximately one half that of the high-speed divider proposed by Cappa and Hamacher, which uses the most general high-speed techniques of carry-save and CLA.     

Low threshold current operation of self-assembled InAs/GaAs quantum dot lasers by metal organic chemical vapour deposition

Low threshold current operation of self-assembled InAs/GaAs quantum dot lasers grown by metal organic chemical vapour deposition is reported. Continuous-wave lasing at room temperature with low threshold current (6.7 mA) was achieved at the wavelength of 1.18 /spl mu/m. The threshold current of 6.7 mA is the lowest value so far achieved in quantum dot lasers grown by metal organic chemical vapour deposition. Comparison with photoluminescence spectra indicates that the observed lasing originates from the ground state of InAs quantum dots.