Thermal buffer materials for enhancement of device performance of organic light emitting diodes fabricated by laser imaging process

Laser Induced Thermal Imaging (LITI) is a laser addressed thermal patterning technology with unique advantages such as an excellent uniformity of transfer film thickness, a capability of multilayer stack transfer and a possibility to fabricate high resolution as well as large-area display. Nevertheless, it has been an obstacle to use such a laser imaging process as a commercial technology so far because of serious deterioration of the device performances plausibly due to a re-orientation of the molecular stacking especially in the emitting layer during thermal transfer process. To improve device performances, we devised a new concept to suppress the thermal degradation during such kind of thermal imaging process by using a high molecular weight small molecular species with large steric hindrance as well as high thermostability as a thermal buffer layer to realize highly efficient LITI devices. As a result, we obtained very high relative efficiency (by EQE) up to 91.5% at 1000 cd/m² from the LITI devices when we utilize 10-(naphthalene-2-yl)-3-(phenanthren-9-yl)spiro[benzo[ij]tetraphene-7,9′-fluorene] as a thermal buffer material.     

Direct extraction of an empirical temperature-dependent InGaP/GaAs HBT large-signal model

A new empirical InGaP/GaAs heterojunction bipolar transistor (HBT) large-signal model including self-heating effects is presented. The model accounts for the inherent temperature dependence of the device characteristics due to ambient-temperature variation as well as self-heating. The model is accompanied by a simple extraction process, which requires only dc current-voltage (I-V) and multibias-point small-signal S-parameter measurements. All the current-source model parameters, including the self-heating parameters, are directly extracted from measured forward I-V data at different ambient temperatures. The distributed base-collector capacitance and base resistance are extracted from measured S-parameters using a new technique. The extraction procedure is fast, accurate, and inherently minimizes the average squared-error between measured and modeled data, thereby eliminating the need for further optimization following parameter extraction. This modeling methodology is successfully applied to predict the dc, small-signal S-parameter, and output fundamental and harmonic power characteristics of an InGaP/GaAs HBT, over a wide range of temperatures.     

Enhanced efficiency of organic photovoltaic cells with Sr2SiO4:Eu2+ and SrGa2S4:Eu2+ phosphors

We report the effect of yellow Sr₂SiO₄:Eu²⁺ and green SrGa₂S₄:Eu²⁺ phosphors on the efficiency of organic photovoltaic (OPV) cells. Each phosphor was coated on the back side of indium tin oxide (ITO)/glass substrates by spin coating with poly(methyl methacrylate) (PMMA). The maximum absorption wavelength of the active layer in the OPV cells was ～512 nm. The emission peaks of Sr₂SiO₄:Eu²⁺ and SrGa₂S₄:Eu²⁺ were maximized at 552 nm and 534 nm, respectively. The short circuit current density (J_sc) and power conversion efficiency (PCE) of the OPV cells with Sr₂SiO₄:Eu²⁺ (8.55 mA/cm² and 3.25%) and with SrGa₂S₄:Eu²⁺ (9.29 mA/cm² and 3.3%) were higher than those of the control device without phosphor (7.605 mA/cm² and 3.04%). We concluded that phosphor tuned the wavelength of the incident light to the absorption wavelength of the active layer, thus increasing the J_sc and PCE of the OPV cells.     

High current conduction with high mobility by non-radiative charge recombination interfaces in organic semiconductor devices

We report a unique non-radiative p-n-p junction structure to provide high current conduction with high mobility in organic semiconductor devices. The current conduction was improved by increasing p-n junctions made with intrinsic p-type hole transport layer and n-type electron transport layer. The excellent hole mobility of 5.3 × 10^?1 cm²/V s in this p-n-p device configuration is measured by the space charge limited current method with an electric field of 0.3 MV/cm. Enhanced current conduction of 248% at 4.0 V was observed in fluorescent blue organic light-emitting diodes with introduction of non-radiative p-n-p-n-p junction interfaces. Thereupon, the power efficiency at 1000 cd/m² was improved by 22% and the driving voltage also was reduced by 17%, compared to that of no interface device. Such high current conduction with high mobility is attributed to the carrier recombination at p-n-p interfaces through coulombic interaction. This non-radiative p-n-p junction structure suggested in this report can be very useful for many practical organic semiconductor device applications.     

Highly Stretchable or Transparent Conductor Fabrication by a Hierarchical Multiscale Hybrid Nanocomposite

As is frequently seen in sci‐fi movies, future electronics are expected to ultimately be in the form of wearable electronics. To realize wearable electronics, the electric components should be soft, flexible, and even stretchable to be human‐friendly. An important step is presented toward realization of wearable electronics by developing a hierarchical multiscale hybrid nanocomposite for highly flexible, stretchable, or transparent conductors. The hybrid nanocomposite combines the enhanced mechanical compliance, electrical conductivity, and optical transparency of small CNTs (d ≈ 1.2 nm) and the enhanced electrical conductivity of relatively bigger Ag nanowire (d ≈ 150 nm) backbone to provide efficient multiscale electron transport path with Ag nanowire current backbone collector and local CNT percolation network. The highly elastic hybrid nanocomposite conductors and highly transparent flexible conductors can be mounted on any non‐planar or soft surfaces to realize human‐friendly electronics interface for future wearable electronics.     

Fabrication of Multiscale Gradient Polymer Patterns by Direct Molding and Spatially Controlled Reflow

Size variations of pattern spacing as well as gradient control of the as‐formed polymeric pattern via a spatially controlled reflow process are presented. Micro‐ and nanopatterns of polymethyl methacrylate (PMMA) in the form of line‐and‐space strips are first generated by capillary force lithography (CFL), and the residual layers are removed by ashing process. Subsequently, the exposed PMMA strips underwent a controlled reflow process above the glass transition temperature (T_g) while heating single or both sides of the substrate either in parallel to the line pattern (parallel reflow) or perpendicular to the line pattern (perpendicular reflow). As a result of this controlled reflow, a linear or a parabolic profile of pattern spacing is achieved depending on the heating mode. Furthermore, multiscale gradient patterns are formed with the spacing ranging from 98 nm to 4.23 μm (a difference of two orders of magnitude) in a single patterned layer using the original micropattern of 16 μm width and 8 μm spacing. In order to explain reflow behaviors, a simple theoretical model relating the normalized pattern width to the polymer viscosity is derived based on a leveling kinetics of polymer melt. Also, gradient PMMA channels are fabricated and bonded to a glass substrate, which are used to flow a liquid inside the channels by capillarity‐driven flow.     

Surface acoustic wave characteristics of ZnO films grown on a polycrystalline 3C-SiC buffer layer

Zinc oxide (ZnO) thin films were deposited onto a polycrystalline (poly) 3C-SiC buffer layer for surface acoustic wave (SAW) applications using a magnetron sputtering system. Atomic force microscopy (AFM) and X-ray diffraction (XRD) showed that the ZnO grown on 3C-SiC/Si had a smooth surface, a dominant c-axis orientation and a lower residual stress in ZnO thin film compared to that grown directly onto Si substrate. In order to evaluate the SAW characteristics of ZnO films on a 3C-SiC buffer layer, the two-port SAW resonators, based on inter-digital transducer (IDT)/ZnO/3C-SiC/Si and IDT/ZnO/Si structures, were fabricated and measured within a temperature range of 25-135 °C. The resulting 3C-SiC buffer layer improved the insertion loss by approximately 7.3 dB within the SAW resonator and enhanced the temperature stability with TCF = −22 ppm/°C up to 135 °C in comparison to that of TCF = −45 ppm/°C within a temperature range of 25-115 °C of the ZnO/Si structure.     

Sliding wear resistance of metallic coated surfaces

The role of metallic coatings in sliding wear is examined experimentally. The results indicate that the tribological behavior of soft coatings is consistent with the delamination theory of wear, especially the critical nature of the plating thickness. It is shown that a reduction in wear rate of three orders of magnitude is possible when the coating material is softer than the substrate and thinner than a critical thickness. The optimum plate thickness is found to be of the order of 0.1 μm for cadmium, silver, gold or nickel plated on various types of steel. Cadmium, silver and nickel reduce wear only in non-oxidizing environments, whereas gold reduces wear both in air and in inert atmospheres.The roughness of the substrate surface prior to plating and the nature of the coating/substrate bond have significant effects on the life of these coatings. The life of the coatings is increased by polishing the substrate to 0.1 μm (c.l.a.) prior to plating, and also by diffusion of the plated material into the substrate, which increases the coating/substrate bond strength.     

Efficient dc-free RLL codes for optical recording

We report on new dc-free runlength-limited codes (DCRLL) intended for the next generation of DVD. The efficiency of the newly developed DCRLL schemes is extremely close to the theoretical maximum, and as a result, significant density gains can be obtained with respect to prior art coding schemes. With a newly developed DCRLL (d=2) code we can achieve a 9% higher overall rate than that of DVD's EFMPlus.     

An improved deep submicrometer MOSFET RF nonlinear model with newbreakdown current model and drain-to-substrate nonlinear coupling

An improved deep submicrometer (0.25 μm) MOSFET radio-frequency (RF) large signal model that incorporates a new breakdown current model and drain-to-substrate nonlinear coupling was developed and investigated using various experiments. An accurate breakdown model is required for deep submicrometer MOSFETs due to their relatively low breakdown voltage. For the first time, this RF nonlinear model incorporates the breakdown voltage turnover trend into a continuously differentiable channel current model and a new nonlinear coupling circuit between the drain and the lossy substrate. The robustness of the model is verified with measured pulsed I-V, S-parameters, power characteristics, harmonic distortion, and intermodulation distortion levels at different input and output termination conditions, operating biases, and frequencies