Mild combined immunodeficiency in identical twins

Fourteen adult cats were exercised on a motor-driven treadmill 5 days each week for 6 weeks to determine the effect of exercise conditioning on the intrinsic contractile state of the myocardium. The exercise program was sufficient to produce a cardiovascular training effect manifested by slower exercising heart rates and resting heart rates after atropine by the end of the 6th week. The mechanical function of the isolated right ventricular papillary muscle from exercised cats was compared with that of 17 sedentary adult cats. There were no significant differences between exercised and control cats in in heart weight-body weight ratios, resting and active lenght - tension relations, maximal rate of isometric force development at the peak of the length-tension curve (Lmax), time to peak force at Lmax, maximal force development with paired stimulation and norepinephrine, or force-velocity relations. These results indicate that the intrinsic state of feline myocardium is unaffected by exercise conditioning.     

Long-term results in the treatment of femoral-shaft fractures in young children by immediate spica immobilization

Manual traction reduction without anesthesia and immediate immobilization in a spica cast were used to treat eighty-five children ranging in age from birth to ten years old who had closed femoral-shaft fractures and no associated injuries. Up to two centimeters of overriding, 30 degrees of anterior angulation, and 15 degrees of medial angulation were accepted. Any angulation in excess of these amounts, or lateral or posterior angulation, was corrected by wedging the cast at the fracture site. Further telescoping of the fracture fragments in the case was attributed to the child pressing the foot against the bottom of the cast and was prevented by removing the sole of the cast. Of the seventy-five children examined two to eighteen years after fracture, none had any residual skeletal deformity or joint stiffness. The length discrepancies of the fractured limbs ranged from 1.7 centimeters of shortening to 0.9 centimeter of overgrowth.     

Importance of dissociation equilibrium and variable transport properties on estimation of flame temperature and droplet burning rate

By using droplet combustion in oxidizer-rich environments as a model problem, the present investigation demonstrates both experimentally and theoretically that variable transport properties and flame dissociation are important factors which influence the bulk combustion charateristics, such as the fuel consumption rate and the flame temperature and location. A simplified, internally consistent methodology is proposed for the evaluation of these properties by analyzing the transport aspects of the problem and separately determining the characteristics of the flame in dissociation equilibrium through adiabatic flame temperature calculation, with allowance for the falsification of the oxidizer concentration due to diffusional stratification.     

A linear operational transconductance amplifier for instrumentationapplications

A linear operational transconductance amplifier (OTA) is described that consists of a linear transconductor and a translinear current gain cell followed by three current mirrors. The proposed circuit has superior linearity and temperature characteristic when compared with the commercially available OTA. A prototype circuit with a transconductance of 50 μS has been built with discrete bipolar transistors producing a linearity error of less than ±20% over an input voltage range from -0.8 to 0.8 V. The prototype OTA circuit also exhibits a transconductance that is linearly dependent on a bias current varying over four decades with a sensitivity of 1 S/A     

An analytical threshold-voltage model of trench-isolated MOSdevices with nonuniformly doped substrates

A simple closed-form expression of the threshold voltage is developed for trench-isolated MOS (TIMOS) devices with feature size down to the deep-submicrometer range. The analytical expression is the first developed to include the nonuniform doping effect of a narrow-gate-width device. The inverse narrow width effect can be predicted analytically from the proposed model. It was derived by modeling the gate sidewall capacitance to include the two-dimensional field-induced edge fringing effect and solving the Poisson equation to include the channel implant effect at different operating backgate biases. A two-dimensional simulation program was developed, and the simulated data were used for verification of the analytical model. Good agreements between the modeled and simulated data have been achieved for a wide range of gate widths and biases. The model is well suited for the design of the basic transistor cell in DRAM circuits using trench field oxide isolation structure     

A partial variational analysis of planar dielectric antennas

The reflection and radiation characteristics of a planar dielectric antenna with arbitrary geometrical configuration are analyzed numerically. A variational equation is first established based on the partial variational principle (PVP), and then solved by the finite element method coupled with the frontal solution technique. The radiation and boundary conditions are incorporated by combining the modal expansion method and the Green's function approach for exterior field representation. The reflection coefficients, the radiation patterns, and the directive and power gains of several antennas with linearized structures are studied and compared     

A model for hot-electron-induced MOSFET linear-current degradationbased on mobility reduction due to interface-state generation

A simple model for the hot-electron degradation of MOSFET linear-current drive is developed on the basis of the reduction of the inversion-layer mobility due to the generation of interface states. The model can explain the observed dependence of the device hot-electron lifetime on the effective channel length and oxide thickness by taking into account both the relative nonscalability of the localized damage region and the dependence of the linear-current degradation on the effective vertical electric field E_eff. The model is verified for deep-submicrometer non-LDD n-channel MOSFETs with L_eff=0.2-1.5 μm and T_ox=3.6-21.0 nm. From the correlation between linear-current and charge-pumping degradation, the scattering coefficient α, which relates the number of generated interface states to the corresponding amount of inversion-layer mobility reduction, can be extracted and its dependence on E_eff determined. Using this linear-current degradation model, existing hot-electron lifetime prediction models are modified to account explicitly for the effects of L_eff and T _ox     

Structural Fault Based Specification Reduction for Testing Analog Circuits

Specification reduction can reduce test time, consequently, test cost. In this paper, a methodology to reduce specifications during specification testing for analog circuit is proposed and demonstrated. It starts with first deriving relationships between specifications and parameter variations of the circuit-under-test (CUT) and then reduces specifications by considering bounds of parameter variations. A statistical approach by taking into account of circuit fabrication process fluctuation is also employed and the result shows that the specification reduction depends on the testing confidence. A continuous-time state-variable benchmark filter circuit is applied with this methodology to demonstrate the effectiveness of the approach.     

New collector undercut technique using a SiN sidewall for low basecontact resistance in InP/InGaAs SHBTs

A new collector undercut process using SiN protection sidewall has been developed for high speed InP/InGaAs single heterojunction bipolar transistors (HBTs). The HBTs fabricated using the technique have a larger base contact area, resulting in a smaller DC current gain and smaller base contact resistance than HBTs fabricated using a conventional undercut process while maintaining low C_bc. Due to the reduced base contact resistance, the maximum oscillation frequency (f_max) has been enhanced from 162 GHz to 208 GHz. This result clearly shows the effectiveness of this technique for high-speed HBT process, especially for the HBTs with a thick collector layer, and narrow base metal width     

Reliability analysis of a human operator under different levels of stress

This paper presents a reliability analysis of a human operator carrying out his jobs under different levels of stress. The failed system, which is due to self-correctable error, is restored to as-new at normal stress. Laplace transforms of state probabilities and operator reliability are derived. The mean time to human error is also given.