Strength improvement and purification of Yb2Si2O7‐SiC nanocomposites by surface oxidation treatment

A two‐step processing was developed to prepare Yb₂Si₂O₇‐SiC nanocomposites. Yb₂Si₂O₇‐Yb₂SiO₅‐SiC composites were first fabricated by a solid‐state reaction/hot‐pressing method. The composites were then annealed at 1250°C in air for 2 hours to activate the oxidation of SiC, which effectively transformed the Yb₂SiO₅ into Yb₂Si₂O₇. The surface cracks purposely induced can be fully healed during the oxidation treatment. The treated composites have improved flexural strength compared to their pristine composites. The mechanism for crack healing and silicate transformation have been proposed and discussed in detail.     

Comparative study of Al2O3, HfO2, and HfAlOx for improved self‐compliance bipolar resistive switching

The comparison of resistive switching (RS) storage in the same device architecture is explored for atomic layer deposition (ALD) Al₂O₃, HfO₂ and HfAlO_x‐based resistive random access memory (ReRAM) devices. Among them, the deeper high‐ and low‐ resistance states, more uniform V_SET‐V_RES, persistent R_OFF/R_ON (>10²) ratio and endurance up to 10⁵ cycles during both DC and AC measurements were observed for HfAlO_x‐based device. This improved behavior is attributed to the intermixing of amorphous Al₂O₃/HfO₂ oxide layers to form amorphous thermally stable HfAlO_x thin films by consecutive‐cycled ALD. In addition, the higher oxygen content at Ti/HfAlO_x thin films interface was found within the energy dispersive spectroscopy analysis (EDS). We believe this higher oxygen content at the interface could lead to its sufficient storage and supply, leading to the stable filament reduction‐oxidation operation. Further given insight to the RS mechanism, SET/RESET power necessities and scavenging effect shed a light to the enhancement of HfAlO_x‐based ReRAM device as well.     

The effects of solution properties and polyelectrolyte on electrospinning of ultrafine poly(ethylene oxide) fibers

The effects of solution properties and polyelectrolyte on the electrospinning of poly(ethylene oxide) (PEO) solutions were investigated. Ultrafine PEO fibers without beads were electrospun from 3, 4, 7 and 7 wt% PEO solutions in chloroform, ethanol, (dimethylformamide) DMF and water, respectively. At these concentrations, the values of [η]C were ∼10 for all solutions. The average diameters of PEO fibers were ranged from 0.36 to 1.96 μm. The higher the dielectric constant of solvent was, the thinner PEO fiber was. The average diameters of electrospun PEO fibers from PEO/water solutions were decreased and their distributions were narrowed by adding 0.1 wt% poly(allylamine hydrochloride) (PAH) and poly(acrylic acid sodium salt) (PAA) due to the increased charge density in solutions. The addition of PAH and PAA lowered the minimum concentration for electrospinning of a PEO/water solution to 6 wt%.     

One-step metal electroplating and patterning on a plastic substrate using an electrically-conductive layer of few-layer graphene

Few-layer graphene (FLG) was investigated as an electrically-conductive interleaf layer for one-step electroplating and patterning of metal on nonconductive polymer substrates without using multiple and toxic pretreatment processes in traditional electroplating. An individual FLG (5–10 nm of thickness with 6.4% of oxygen content) was obtained by expanding graphite with microwave followed by exfoliating the expanded graphite with sonication in N-methyl-pyrrolidone. Stacking FLG in the in-plane direction, a robust FLG film was obtained by the vacuum-assisted filtering and drying methods, and transferred to a polyethylene terephthalate (PET) substrate via an intermediate transfer to the water surface. The sheet resistance of the FLG film on the PET substrate was 0.9 kΩ/sq with a thickness of 80 nm and the root-mean-square roughness of 29 nm. In the electroplating of nickel on the FLG film, hemisphere-shape metal seeds appeared in the early stage of electroplating and they subsequently grew up to 200–480 nm, which became connected to form a continuous nickel layer. The thickness of the continuous nickel layer increased linearly with electroplating time. The developed electroplating method demonstrated its capability of selective patterning on nonconductive substrates using a simple masking technique.     

The Aharonov-Bohm effect in graphene rings with metal mirrors

We measured the Aharonov-Bohm (AB) effect in graphene rings with superconducting-(Al) and normal-metal (Au) mirrors. The mirrors were deposited either on additional stubs connected to the rings in the transverse direction or on the ring bias lines. A significant enhancement of the visible phase coherence was observed in the latter case, in which we observed even the third harmonic of the AB oscillations. The superconductivity of the mirrors appears to be unimportant for the improved coherence in graphene. A large Fermi energy mismatch between graphene and the mirror material is sufficient for this effect. In addition, a transport gap was observed in our graphene structures at the gate voltage close to the Dirac point. The value of the gap can be reproduced by assuming the occurrence of Coulomb blockade effects in graphene.     

Structural and optical properties of ZnS thin films deposited by RF magnetron sputtering

Zinc sulfide [ZnS] thin films were deposited on glass substrates using radio frequency magnetron sputtering. The substrate temperature was varied in the range of 100°C to 400°C. The structural and optical properties of ZnS thin films were characterized with X-ray diffraction [XRD], field emission scanning electron microscopy [FESEM], energy dispersive analysis of X-rays and UV-visible transmission spectra. The XRD analyses indicate that ZnS films have zinc blende structures with (111) preferential orientation, whereas the diffraction patterns sharpen with the increase in substrate temperatures. The FESEM data also reveal that the films have nano-size grains with a grain size of approximately 69 nm. The films grown at 350°C exhibit a relatively high transmittance of 80% in the visible region, with an energy band gap of 3.79 eV. These results show that ZnS films are suitable for use as the buffer layer of the Cu(In, Ga)Se₂ solar cells.     

Hazardous acid detection based on chitosan‐grafted‐polyaniline copolymer

Polyaniline (PANI) has been utilized very well as an active material for hazardous acid detection device. Because its electrical conductivity is developing when it is doped with the protonic acid. However, a critical disadvantage of this material is its insolubility in general solvents so its processability is very poor. In this work, we prepared a Chitosan‐g‐PANI (Cs‐g‐PANI) copolymer to improve its solubility and prossability using common solvents and use film form of the final product to develop a sensitive device, which responds to the presence of hazardous acids. The synthetic Cs‐g‐PANI showing good solubility and excellent film forming properties was characterized by Fourier transform infrared spectroscopy, ultraviolet–visible spectroscopy, as well as X‐ray diffraction analysis, and scanning electron microscopy. The physical properties of Cs‐g‐PANI films were optimized by controlling the Cs composition. Constant potential was applied to this material for detecting the existence of hazardous acids such as hydrochloric acid (HCl), nitric acid, formic acid, and acetic acid. Our findings suggest that this device responds to the presence of HCl faster than any other acids. The detection mechanism is discussed in detail. POLYM. ENG. SCI., 59:E105–E110, 2019. © 2018 Society of Plastics Engineers     

Optimization of thermoelectric properties of n-type Bi_2(Te,Se)_3 with optimizing ball milling time

The thermoelectric properties at elevated temperature were investigated for n-type Bi2(Te,Se)3 which is obtained from ball milling processed powder with various milling times. Electrical properties such as electrical resistivity and Seebeck coefficient are clearly dependent on milling time, in which the carrier concentration is attributed to the change of the electrical properties. The concentrations of the defects are also varied with the ball milling time, which is the origin of the carrier concentration variation. Even though finer grain sizes are obtained after the long ball milling time, the temperature dependence of the thermal conductivity is not solely understood with the grain size, whereas the electrical contribution to the thermal conductivity should be also considered. The highest figure of merit value of ZT = 0.83 is achieved at373 K for the optimized samples, in which ball milling time is 10 h. The obtained ZT value is 48% improvement over that of the 0.5-h sample at 373 K.     

Electron spin resonance of thin films of organic light-emitting material tris(8-hydroxyquinoline) aluminum doped by magnesium

We have successfully observed electron spin resonance (ESR) signals of radical anions in thin films of tris(8-hydroxyquinoline) aluminum (Alq₃), a compound widely used as electron transporting and luminescent layers in organic light-emitting diodes. To obtain definitely defined radical-anion states in Alq₃, we doped Alq₃ with Mg by co-evaporating these materials. The obtained g value and peak-to-peak ESR linewidth ΔH_pp of Alq₃ radical anions are 2.0030 and 2.19 mT, respectively. Theoretical g value and hyperfine interactions were calculated by density functional theory method, which are in good agreement with the experimental results. A quantitative evaluation of doping concentration was performed. We confirmed that doped charges are localized at deep trapping sites by the lineshape analysis and temperature dependence of the ESR signals. Morphological investigation using transmission electron microscopy clarified that the co-evaporated Mg atoms form clusters.