74.
An organic thin-film transistor (OTFTs) having OTS/SiO
2 bilayer gate insulator and MoO
3/Al electrode configuration between gate insulator and source–drain (S–D) electrodes has been investigated. Thermally grown SiO
2 layer is used as the OTFT gate dielectric and copper phthalocyanine (CuPc) for an active layer. We have found that using silane coupling agents, octadecyltrichlorosilane (OTS) on SiO
2, surface energy of SiO
2 gate dielectric is reduced; consequently, the device performance has been improved significantly. This OTS/SiO
2 bilayer gate insulator configuration increases the field-effect mobility, reduces the threshold voltage and improves the on/off ratios simultaneously. The device with MoO
3/Al electrode has similar source–drain current (
IDS) compared to the device with Au electrode at same gate voltage. Our results indicate that using double-layer of insulator and modified electrode is an effective way to improve OTFT performance.
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