Study on the Complexity of the Bullwhip Effect

Recent years have witnessed a rapid growth of interest in the study of the dynamic behavior of replenishment rules of bullwhip effect. We prove that bullwhip effect and butterfly effect share a same the self-oscillation amplifying mechanism that is the ordering decisions the supplier self-oscillation amplify the perturbations brought by the errors in the processing of retailers' demand information. This results as an explicit self-similar structure of the sensitivity of the system to the initial values duty to the nonlinear mechanism. In this paper, the causes process of the bullwhip effect is described as the internal nonlinear mechanism and study on the complexity of bullwhip effect for order-up-to policy under demand signal processing. The methodology is based on fractal and chaotic theory and allows important insights to be gained about the complexity behavior of bullwhip effect.     

Enhanced thermal stability of a sputtered titanium-nitride film as a diffusion barrier for capacitor-bottom electrodes

The effect of a thin RuO_x layer formed on the Ru/TiN/doped poly-Si/Si stack structure was compared with that on the RuO_x/TiN/doped poly-Si/Si stack structure over the post-deposition annealing temperature ranges of 450–600°C. The Ru/TiN/poly-Si/Si contact system exhibited linear behavior at forward bias with a small increase in the total resistance up to 600°C. The RuO_x/TiN/poly-Si/Si contact system exhibited nonlinear characteristics under forward bias at 450°C, which is attributed to no formation of a thin RuO_x layer at the RuO_x surface and porous-amorphous microstructure. In the former case, the addition of oxygen at the surface layer of the Ru film by pre-annealing leads to the formation of a thin RuO_x layer and chemically strong Ru-O bonds. This results from the retardation of oxygen diffusion caused by the discontinuity of diffusion paths. In particular, the RuO_x layer in a nonstoichiometric state is changed to the RuO₂-crystalline phase in a stoichiometric state after post-deposition annealing; this phase can act as an oxygen-capture layer. Therefore, it appears that the electrical properties of the Ru/TiN/poly-Si/Si contact system are better than those of the RuO_x/TiN/poly-Si/Si contact system.     

Using buried capacitor in LTCC-MLC balun

A novel chip-type ceramic balun designed in the 2.4 GHz ISM band frequency is presented. A buried capacitor is included in the balun, so that the length of the coupled transmission lines can be reduced and can be designed very easily. A meander or spiral broadside coupled-line is adopted to realise the proposed LTCC multi-layer balun. The measured performances of phase and amplitude balance for this LTCC-MLC balun show a good match with computer simulation     

微波体声波延迟线的电磁屏蔽

本文分析了微波体声波延迟线多层介质的电磁屏蔽效应，结果表明，全屏蔽方式可以有效地解决微波延迟线研制中的直通抑制问题。实验结果证实了理论分析。     

多层梯度层InGaAs（P）InPSAGM雪崩光电二极管

本文报道采用液相外延（ＬＰＥ）生长和传统光刻制管工艺研制出引入多层（三层或三层以上）中间能带隙过渡的吸收区、倍增区分离的ＩｎＧａＡｓ（Ｐ）／ＩｎＰ雪崩光电二极管（简称ＩｎＧａＡｓ（Ｐ）／ＩｎＰＳＡＧＭＡＰＤ），其技术指标为：击穿电压ＶＢ＝４０～９０Ｖ；０．９ＶＢ时的暗电流Ｉｄ最小可小于１０ｎＡ；１．３μｍ时光响应度Ｒｅ＝０．６～０．８Ａ／Ｗ，倍增因子Ｍ≥２０（Ｍｍａｘ＞４０），过剩噪声因子Ｆ≌５和较宽频带响应特性。     

一种实现最佳用户检测的非线性优化神经网络

本文提出并讨论了实现码分多址（CDMA）系统上最佳多用户检测（MUD）的一种神经网络方法。该方法通过将最佳多用户检测视为非线性优化组合问题，利用神经网络能有效求解非线性优化问题的优势，导出了一种非线性优化神经网络来实现最佳多用户检测，理论分析和计算机模拟表明，所提出的神经网络具有可实时应用的动态性能和较传统方法优越得多的误码率性能和抗多址干扰的性能。     

放置过滤器浇注系统的设计

综述了常用的网型、芯型、泡沫陶瓷过滤器的研究和应用情况。指出应根据过滤器类型，确定其在浇注系统中的安放位置并相应改变该处的结构和截面积，以便在使用过滤器净化金属的同时，保证充型速度不变。     

塑料模现状及发展趋势

我国塑料模的发展,极其迅速,现已具相当规模。无论是设计水平、加工制造技术,还是 CAD 技术都有了明显提高。本文简明扼要地介绍了国内外塑料模的现状、发展趋势、市场预测,以及“九五”国家规划目标与对策。     

GaN and AlGaN high-voltage rectifiers grown by metal-organic chemical-vapor deposition

In this paper, we report the study of the electrical characteristics of GaN and AlGaN vertical p-i-n junctions and Schottky rectifiers grown on both sapphire and SiC substrates by metal-organic chemical-vapor deposition. For GaN p-i-n rectifiers grown on SiC with a relatively thin “i” region of 2 μm, a breakdown voltage over 400 V, and forward voltage as low as 4.5 V at 100 A/cm² are exhibited for a 60-μm-diameter device. A GaN Schottky diode with a 2-μm-thick undoped layer exhibits a blocking voltage in excess of ∼230 V at a reverse-leakage current density below 1 mA/cm², and a forward-voltage drop of 3.5 V at a current density of 100 A/cm². It has been found that with the same device structure and process approach, the leakage current of a device grown on a SiC substrate is much lower than a device grown on a sapphire substrate. The use of Mg ion implantation for p-guard rings as planar-edge terminations in mesageometry GaN Schottky rectifiers has also been studied.