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211.
E. A. Gurieva P. P. Konstantinov L. V. Prokof D. A. Pshenaĭ-Severin M. I. Fedorov Yu. I. Ravich 《Semiconductors》2006,40(7):763-767
The coefficients of thermopower and electrical and thermal conductivity in the PbTe0.8Se0.1 S 0.1 solid solution with electron concentration (4.6–54) × 1018 cm?3 are studied in the range of 85–300 K (and in some cases up to 700 K). The temperature dependences of electrical and thermal conductivity indicate that the low-temperature electron and phonon scattering initiated by the off-center impurity of sulfur exists. The temperature dependences of the electronic and lattice components of thermal conductivity are calculated in the approximation of a parabolic spectrum and electron scattering by acoustic phonons and neutral substitutional impurities. The lattice thermal conductivity is found to have a feature in the form of a shallow minimum in the range of 85–250 K. A similar feature, while not so clearly pronounced, is found to exist also in Pb1?x SnxTe1?x Sex alloys (x≥0.15) with an off-center tin impurity. An analysis of the possible origins of this effect suggests that, at low temperatures, the Lorentz numbers L of the materials under study are smaller than the L0 numbers employed which correspond to the above scattering mechanisms. The cause of the decrease in L is related to electron scattering at two-level systems, a mechanism whose effect grows with increasing electron energy. An analysis of experimental data obtained at high temperatures, as well as on undoped samples with the lowest possible carrier concentrations, yields the values of L for samples with different electron densities. The minimum value L/L0 = 0.75 is obtained for a lightly doped sample at ~130 K. 相似文献
212.
This letter focuses on the performance analysis of the decorrelating receiver in multipath Rician faded CDMA channels. M-ary QAM scheme is employed to improve the spectral efficiency. Approximate expressions are first derived for the two performance indexes: the average symbol error rate (SER) and the average bit error rate (BER) when the decorrelating-first receiver perfectly knows the channel information of the user of interest. To achieve desirable closed-form expressions of the SER and the BER, we exploit results in large system analysis and make assumptions of a high signal-to-interference ratio (SIR) and/or a small Rician K-factor. To measure the receiver performance in the practical scenario, we further derive expressions to approximate the average SER and BER of the decorrelating-first scheme with channel uncertainty. Simulation results demonstrate that the analytical results can also be employed to evaluate the performance of the combining-first receiver. 相似文献
213.
O. Yu. Alekseev V. S. Borisov M. V. Davidovich N. F. Popova 《Journal of Communications Technology and Electronics》2006,51(11):1240-1247
Direct and inverse problems are considered for diffraction by an open end of a rectangular waveguide (RW) with a flange that adjoins a piecewise inhomogeneous planar layered lossy medium. Also considered are similar diffraction problems for a junction of an RW and a rectangular resonator filled with a multilayer medium and a junction of two RWs, one of which contains a multilayer plate. Such open and shielded waveguide probe structures (WPSs) are used for determination and nondestructive testing of parameters of multilayer samples. The direct problem is formulated on the basis of admittance and impedance algorithms with consideration for losses existing in the medium, flange, and screens. In this case, the approximation of the given aperture field allows obtainment of explicit solutions for open and shielded WPSs in the form of integrals. Solution of the inverse problem that lies in determining thicknesses, permittivities, and permeabilities of the layers from measured values of the magnitude of the reflection coefficient is obtained by minimizing the corresponding least-squares error and by constructing artificial neural networks. In order to increase the accuracy, it is proposed to use a two-port of errors and perform measurements for several positions of the sample with respect to the flange and different impedance conditions behind the sample. 相似文献
214.
L. G. Gerchikov Yu. A. Mamaev A. V. Subashiev Yu. P. Yashin D. A. Vasil’ev V. V. Kuz’michev A. E. Zhukov E. S. Semenova A. P. Vasil’ev V. M. Ustinov 《Semiconductors》2006,40(11):1326-1332
Photoemission of polarized electrons from heterostructures based on InAlGaAs/GaAs superlattices with minimum conduction-band offsets is investigated. The comparison of the excitation energy dependence of the photoemission polarization degree with the calculated spectra make it possible to determine the polarization losses at different stages of the photoemission. A maximum polarization of P = 91% and a quantum yield of 0.14% are close to the best results obtained for photocathodes on the basis of strained semiconductor superlattices. 相似文献
215.
N.S. Chen S.F. Yu 《Photonics Technology Letters, IEEE》2004,16(7):1610-1612
The effect of external optical feedback on the transient response of antiresonant reflecting optical waveguide (ARROW) vertical-cavity surface-emitting lasers (VCSELs) is studied. It can be shown that the proper design of ARROW can suppress the excitation of high-order transverse leaky mode as well as increase the critical feedback strength so that stable high-power single-mode operation of VCSELs can be obtained even under the influence of strong external optical feedback. 相似文献
216.
根据石油开采业对石油机械产品的需求 ,利用机械理论基础知识 ,通过实践设计 ,提出了对几何尺寸长的金属管类进行调质处理后的均匀冷却方法 ,以满足其性能要求。 相似文献
217.
应用试井方法,提出一套比较切合实际的小块气藏动态特征综合评价方法,推导出水驱气藏水侵量的计算公式,编制了天然气高压物性参数计算和气藏稳产年限预测等程序软件。 相似文献
218.
阴,阳离子聚合物地层内凝胶化改善水驱效果的研究 总被引:9,自引:1,他引:8
研究了一杆阴离子聚合物(Ac530)和一种阳离子聚合物(Mb581)在水溶液中形成凝胶的条件和过程、凝胶化学结构、形态、稳定性和力学性能。在模拟地层的二维微观模型内观测了两种聚合物驱替渗流、相逼、形成凝胶、凝胶封堵大孔道的机理。在亲水填砂模型内测定了阴、阳离子聚合物凝胶体系降低渗透率的能力。 相似文献
219.
A.S. Fomichev I. David S.M. Lukyanov Yu.E. Penionzhkevich N.K. Skobelev O.B. Tarasov 《Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment》1994,350(3):605-607
The mass and charge identification of secondary particles with Z < 4 by a large CsI(T1) scintillation detector is performed using pulse shape analysis and time-of-flight methods. The dependence of the light output on E, A and Z is studied in the energy range of 1–20 MeV/A and special attention is paid to the integration time of the photomultiplier anode signal. It is found that the behaviour of the calibration curves strongly depends on the choice of the integration time interval. 相似文献
220.
Modeling ion implantation of HgCdTe 总被引:2,自引:0,他引:2
H. G. Robinson D. H. Mao B. L. Williams S. Holander-Gleixner J. E. Yu C. R. Helms 《Journal of Electronic Materials》1996,25(8):1336-1340
Ion implantation of boron is used to create n on p photodiodes in vacancy-doped mercury cadmium telluride (MC.T). The junction
is formed by Hg interstitials from the implant damage region diffusing into the MC.T and annihilating Hg vacancies. The resultant
doping profile is n+/n-/p, where the n+ region is near the surface and roughly coincides with the implant damage, the n- region is where Hg vacancies have been annihilated revealing a residual grown-in donor, and the p region remains doped by
Hg vacancy double acceptors. We have recently developed a new process modeling tool for simulating junction formation in MC.T
by ion implantation. The interstitial source in the damage region is represented by stored interstitials whose distribution
depends on the implant dose. These interstitials are released into the bulk at a constant, user defined rate. Once released,
they diffuse away from the damage region and annihilate any Hg vacancies they encounter. In this paper, we present results
of simulations using this tool and show how it can be used to quantitatively analyze the effects of variations in processing
conditions, including implant dose, annealing temperature, and doping background. 相似文献