Profile-Driven Component Placement for Cluster-Based Online Services

The growth of the Internet and of various intranets has spawned a wealth of online services, most of which are implemented on local-area clusters using remote invocation (for example, remote procedure call/remote method invocation) among manually placed application components. Component placement can be a significant challenge for large-scale services, particularly when application resource needs are workload dependent. Automatic component placement has the potential to maximize overall system throughput. The key idea is to construct (offline) a mapping between input workload and individual-component resource consumption. Such mappings, called component profiles, then support high-performance placement. Preliminary results on an online auction benchmark based on J2EE (Java 2 Platform, Enterprise Edition) suggest that profile-driven tools can identify placements that achieve near-optimal overall throughput.     

Monte Carlo simulation of gas phase polymerization of 1,3‐butadiene. Part II: Kinetics optimization and confirmation

Studies on the deactivations and initiations of gas phase polymerizations of 1,3‐butadiene have been achieved by Monte Carlo simulation. Initiation and deactivation control the reaction before and after the peak of the polymerization rate, respectively. The influence of polymerization temperature has been studied. Monte Carlo modeling of polymerization kinetics and mechanism was confirmed by the agreement of experimental data and simulation results of polymerizations run with a temporary evacuation of monomer. The balance of catalysts and active chains is established by both initiation and chain transfer reactions with cocatalyst, which causes a ‘pseudo‐stability’ stage. © 2003 Society of Chemical Industry     

光电平台无角位移减振机构运动分析

分析了光电平台的工作环境和角振动对成像质量的影响，应用空间机构学原理和减振理论，设计了一种既具减振功能又能抑制角位移的无角位移减振机构。对减振机构的减振机理及运动特性进行了分析，并利用三维建模软件和MSC．Visual Nastran 4D仿真分析软件对该减振机构进行了三雏实体仿真分析，通过输出的仿真数据及曲线检验无角位移减振原理的正确性。     

通用串行总线(USB)接口芯片USBN9602的应用

简要介绍了通用串行总线USB的特点,对USB接口芯片USBN9602的内部结构、引脚、寄存器组作了详细的论述,并介绍了其应用。     

Computational analysis of thin coating layer failure using a cohesive model and gradient plasticity

Thermal barrier coatings (TBC) are widely used to prevent transient high temperature attack and allow components high durability. Due to strong inhomogeneous material properties the TBC failure often initiates near the interface between the brittle oxide layer and the ductile substrate. A reliable prediction of the TBC failure requires detailed information about the crack tip field and the consequent fracture criteria. In the present paper both cohesive model and gradient plasticity are used to simulate the failure process and to study interdependence of the interface stress distribution with the specific fracture energies. Computations confirm that combination of the two models is able to simulate different failure mechanisms in the TBC system. The computational model has the potential to give a realistic prediction of the crack propagation process.     

Characteristics of low-leakage deep-trench diode for ESD protection design in 0.18-/spl mu/m SiGe BiCMOS process

This paper proposes a novel low-leakage BiCMOS deep-trench (DT) diode in a 0.18-/spl mu/m silicon germanium (SiGe) BiCMOS process. By means of the DT and an n/sup +/ buried layer in the SiGe BiCMOS process, a parasitic vertical p-n-p bipolar transistor with an open-base configuration is formed in the BiCMOS DT diode. Based on the two-dimensional (2-D) simulation and measured results, the BiCMOS DT diode indeed has the lowest substrate leakage current as compared to the conventional p/sup +//n-well diode even at high temperature conditions, which mainly results from the existence of the parasitic open-base bipolar transistor. Considering the applications of the diode string in electrostatic discharge (ESD) protection circuit designs, the BiCMOS DT diode string also provides a good ESD performance. Owing to the characteristics of the low leakage current and high ESD robustness, it is very convenient for circuit designers to use the BiCMOS DT diode string in their IC designs.     

φ90mm低铬铸球开裂失效分析

φ90mm低铬铸球在做落球试验中过早出现开裂现象。将该铸球材质进行化学成分分析、力学性能测定及金相组织观察。分析结果表明，该铸球的材料中夹杂物含量较高，其硬度值又偏高，铸球内部又存在严重缩松及其铸态组织中存在大量奥氏体转变产物，致使铸球在落球试验中过早开裂。经过工艺措施的改进，解决了铸球出现过早开裂的现象。     

A New Measure of Misfit for Covariance Structure Models

Various fit indices exist in structural equation models. Most of these indices are related to the noncentrality parameter (NCP) of the chi-square distribution that the involved test statistic is implicitly assumed to follow. Existing literature suggests that few statistics can be well approximated by chi-square distributions. The meaning of the NCP is not clear when the behavior of the statistic cannot be described by a chi-square distribution. In this paper we define a new measure of model misfit (MMM) as the difference between the expected values of a statistic under the alternative and null hypotheses. This definition does not need to assume that the population covariance matrix is in the vicinity of the proposed model, nor does it need for the test statistic to follow any distribution of a known form. The MMM does not necessarily equal the discrepancy between the model and the population covariance matrix as has been assumed in existing literature. Bootstrap approaches to estimating the MMM and a related quantity are developed. An algorithm for obtaining bootstrap confidence intervals of the MMM is constructed. Examples with practical data sets contrast several measures of model misfit. The quantile-quantile plot is used to illustrate the unrealistic nature of chi-square distribution assumptions under either the null or an alternative hypothesis in practice.

     

以3D软件应用为中心的设计管理模式——PDS在配管设计中的应用

由PDS的特点入手,结合工程实践的应用情况,阐明了3D软件可以更广泛的应用于配管的设计中,强调了以3D模型为中心开展设计和管理的新模式.