TM—BMU型合成鞣剂鞣革机理的研究

本文研究和探讨了 TM-BMU 合成鞣剂在皮革中的作用机理。该合成鞣剂的技术性能指标超过了其它同类产品的指标。     

一种频率可调振荡器的设计

文中简单介绍了一种由双比较器型施密特触发器构成的振荡电路,它通过调整外部的电阻来控制对电容的充电电流,从而得到所需频率的方波或锯齿波信号。在对电路工作原理进行分析的基础上,利用Hspice仿真软件对振荡器频率的温度特性、电源变化等进行了仿真。结果表明该振荡电路产生的信号频率不仅可以调节,而且对温度和电源的变化不敏感。     

Transient analysis of the impact stage of wirebonding on Cu/low-K wafers

In this paper, transient mechanical responses of the Cu/low-K structure during the impact stage of the wirebonding process were investigated. Parametric studies were carried out to examine the effect of elastic moduli of different constituent materials on the potential of structural defect on the copper via and the pad. The analysis applied the explicit time integration scheme, which is feasible in dealing with the nonlinear transient structural behavior.     

Hidden state models for noncontact measurements of the carotid pulse using a laser Doppler vibrometer

The method of laser Doppler vibrometry (LDV) is used to sense movements of the skin overlying the carotid artery. When pointed at the skin overlying the carotid artery, the mechanical movements of the skin disclose physiological activity relating to the blood pressure pulse over the cardiac cycle. In this paper, signal modeling is addressed, with close attention to the underlying physiology. Segments of the LDV signal corresponding to single heartbeats, called LDV pulses, are extracted. Hidden Markov models (HMMs) are used to capture the dynamics of the LDV pulses from beat to beat based on pulse morphology; under resting conditions these dynamics are primarily due to respiration-related effects. LDV pulses are classified according to state, by computing the optimal state path through the data using trained HMMs. HMM state dynamics are examined within the context of respiratory effort using strain gauges placed around the abdomen. This study presented here provides a graphical model approach to modeling the dependence of the LDV pulse on latent states.     

智能卡SPA＆DPA攻击

智能卡是一种可防止被入侵设计的设备，为了防止攻击者藉由边际信道泄漏信息，如功率消耗、执行时间、故障时的输出与输入行为、电磁辐射、功率尖峰情形等信息攻击智能卡，必须采取一些防备措施。本文主要介绍攻击智能卡的简易功率分析（SPA），微分功率分析（DPA）。这些技术已被广泛地使用于窃取智能卡保护数据的技术上，提供这些技术的概略性观念，使我们知道问题所在，进一步想出对策，促使我们设计出更安全的智能卡。     

A 1-V 86-mW-RX 53-mW-TX Single-Chip CMOS Transceiver for WLAN IEEE 802.11a

A 1-V WLAN IEEE 802.11a CMOS transceiver integrates all building blocks on a single chip including a transformer-feedback VCO and a stacked divider for the frequency synthesizer and 8-bit IQ ADCs and 8-bit IQ DACs. Fabricated in a 0.18-mum CMOS process and operated at a single 1-V supply, the receiver and the transmitter consume 85.7 mW and 53.2 mW, including the frequency synthesizer, respectively. The total chip area with pads is 12.5 mm².     

Cost-Effective Joint Echo-NEXT Canceller Designs for 10GBase-T Ethernet Systems Based on a Shortened Impulse Response Filter (SIRF) Scheme

Echo canceller plays an important role in the full-duplex communication system. Conventional implementations of echo cancellers are often the adaptive transversal filter architectures due to the simplicity and robustness of stability and convergence. However, the conventional echo cancellers suffer from high cost problem especially when the response time of the echo is long. In this paper, a new cost-efficient architecture of echo cancellers, targeting on 10GBase-T Ethernet System, is presented. The proposed scheme inherits the concept of channel shortening which is widely employed in DSL systems. A shortened impulse response filter is implemented at the receiver to shorten the impulse response of the echo signal. Hence, the overall cost of echo cancellers can be reduced. We generalize the channel shortening architecture to a joint multi-channel shortening scheme. The joint multi-channel shortening architecture can be applied to multiple-input multiple-output wireline communication systems to further reduce both the cost of echo and near-end crosstalk (NEXT) cancellers. We apply the proposed scheme to 10GBase-T Ethernet system. The simulation results show that the proposed echo and NEXT cancellers can save up to 35% hardware cost compared to the conventional transversal implementations.

A Novel Pt/In0.52Al0.48As Schottky Diode-Type Hydrogen Sensor

On the basis of a Pt/In_0.52Al_0.48As metal-semiconductor structure, a novel hydrogen sensor is fabricated and demonstrated. The studied Pt/In_0.52Al_0.48As Schottky diode-type hydrogen sensor exhibits significant sensing performance including high relative sensitivity ratio of about 2600% (under the 1% H₂/air gas and V_R=-0.5 V at 30 degC), large current variation of 310 muA (under the 1% H₂/air gas and V_R=-5 V at 200 degC), widespread reverse-voltage regime (0~-5 V), stable hydrogen-sensing current-voltage (I-V) curves, and fast transient response time of 1.5 s. The calculated Schottky barrier-height change and series-resistance variation, from the thermionic-emission model and Norde method, are 87.0 meV and 288 Omega, respectively (under the 1% H₂/air gas at 30 degC). The hydrogen concentrations and operating temperatures tested in this letter are in the range of 15 ppm-1% H₂/air and 30 degC-250 degC, respectively. Based on the excellent integration compatibility with InP-based electronic devices, the studied device provides the potentiality in high-performance sensor-array applications     

Effects of underfill materials on the reliability of low-K flip-chip packaging

The reliability of low-K flip-chip packaging has become a critical issue owing to the low strength and poor adhesion qualities of the low-K dielectric material when compared with that of SiO₂ or fluorinated silicate glass (FSG). The underfill must protect the solder bumps and the low-K chip from cracking and delamination. However, the material properties of underfill are contrary to those required for preventing solder bumps and low-K chip from cracking and delamination. This study describes the systematic methodologies for how to specify the adequate underfill materials for low-K flip-chip packaging. The structure of the test vehicle is seven copper layers with a low-K dielectric constant value of 2.7-2.9, produced by the chemical vapor deposition (CVD) process. Initially, the adhesion and the flow test of the underfill were evaluated, and then the low-K chip and the bumps stress were determined using the finite element method. The preliminary screened underfill candidates were acquired by means of the underfill adhesion and flow test, and balancing the low-K chip and the bumps stress simulation results. Next, the low-K chips were assembled with these preliminary screened underfills. All the flip-chip packaging specimens underwent the reliability test in order to evaluate the material properties of the underfill affecting the flip-chip packaging stress. In addition, the failed samples are subjected to failure analysis to verify the failure mechanism. The results of this study indicate that, of the underfill materials investigated, those with a glass transition temperature (T_g) and a Young’s modulus of approximately 70–80 °C and 8–10 GPa, respectively, are optimum for low-K flip-chip packaging with eutectic solder bumps.     

SiC power diodes provide breakthrough performance for a wide rangeof applications

The electrical performance of silicon carbide (SiC) power diodes is evaluated and compared to that of commercially available silicon (Si) diodes in the voltage range from 600 V through 5000 V. The comparisons include the on-state characteristics, the reverse recovery characteristics, and power converter efficiency and electromagnetic interference (EMI). It is shown that a newly developed 1500-V SiC merged PiN Schottky (MPS) diode has significant performance advantages over Si diodes optimized for various voltages in the range of 600 V through 1500 V. It is also shown that a newly developed 5000 V SiC PiN diode has significant performance advantages over Si diodes optimized for various voltages in the range of 2000 V through 5000 V. In a test case power converter, replacing the best 600 V Si diodes available with the 1500 V SiC MPS diode results in an increase of power supply efficiency from 82% to 88% for switching at 186 kHz, and a reduction in EMI emissions