The preparation of PLZT ceramics from a sol-gel process

Sol-gel process is employed to prepare PLZT ceramic with the composition 9/56/44 (La/Zr/Ti). Complete crystallization of the sol-gel derived powders is achieved after 600°, 1 hr. calcination. The sintered density of the PLZT pellet decreases as the sintering time increases. A ninety-nine percent theoretical density is obtained for samples sintered at 1250° for one hour. The dielectric properties and optical transmission of the sol-gel derived samples are measured and compared with those of the hot-pressed PLZT ceramics reported in the literature. Sol-gel derived powders, when properly sintered, possess sufficient optical transparency for optoelectrical device applications.     

Overcoming the PCBM/Ag Interface Issues in Inverted Perovskite Solar Cells by Rhodamine-Functionalized Dodecahydro-Closo-Dodecaborate Derivate Interlayer

Efficient modification of the interface between metal cathode and electron transport layer are critical for achieving high performance and stability of the inverted perovskite solar cells (PSCs). Herein, a new alcohol-soluble rhodamine-functionalized dodecahydro-closo-dodecaborate derivate, RBH, is developed and applied as an efficient cathode interlayer to overcome the (6,6)-phenyl-C₆₁ butyrie acid methyl ester (PCBM)/Ag interface issues. By introducing RBH cathode interlayer, the functions of the interface traps passivation, interfacial hydrophobicity enhancement, interface contact improvement as well as built-in potential enhancement are realized at the same time and thus correspondingly improve the device performance and stability. Consequently, a power conversion efficiency (PCE) of 21.08% and high fill factor of 83.37% are achieved, which is one of the highest values based on solution-processed MAPbI₃/PCBM heterojunction PSCs. Moreover, RBH can act as a shielding layer to slow down moisture erosion and self-corrosion. The PCE of the RBH devices still maintain 84% for 456 h (85 °C @ N₂), 87% for 360 h (23 °C @ relative humidity (RH) 35%) of its initial PCE value, while the control device can only maintain ≈23%, 58% of its initial PCE value under the same exposure conditions, respectively.     

城市光纤CATV网络拓扑结构探讨

简要介绍光纤同轴电缆混合网（ＨＦＣ）的优势,分析ＨＦＣ网的几种拓扑结构及优缺点,并对城市ＨＦＣ网拓扑结构的工程实际进行了探讨。     

激光淬火对钛合金高温干摩擦特性影响的实验研究

报道了钛合金TC11对轴承钢GCr15在室温到450℃大气环境下,激光淬火前后球盘对比研究。结果表明,经激光处理后,钛合金在150℃和300℃抗磨能力明显提高,但在室温和450℃改善不明显。     

卫星导航欺骗信号检测技术探究

在卫星导航系统已全面应用于国防、社会民生等各方面的今天,保证系统的应用安全已变得越来越重要.通过研究卫星导航欺骗信号的产生原理和类型,对当前各种检测技术的针对性原理和优劣进行了分析比较,从而得出了不同的检测技术应根据应用场景不同、欺骗信号的类型不同、应用领域的不同而有所选择.     

一种新型的基于无源射频身份识别应答器的电源供给方案

提出了一种基于全集成的无源射频身份识别(RFID)应答器芯片的电源供给方案,并在特许半导体的0.35μm嵌入EEPROM的CMOS工艺线上流片成功.提出的AC/DC和DC/DC电荷泵能够为RFID的应答器芯片提供稳定的工作电压,同时具有极低的功耗和很高的充电效率.还给出了电压倍增器的分析模型、与其他电荷泵的升压原理的比较以及仿真结果和芯片测试结果.     

Design techniques of low-power embedded EEPROM for passive RFID tag

This paper presents an optimized embedded EEPROM design approach which has reduced the power significantly in a short-range passive RFID tag. The proposed array control circuit employs an improved structure to minimize the leakage of memory bit cells. With the proposed array circuit design, the passive RFID tag can operate drawing a low quiescent current. The RFID tag with the proposed EEPROM was fabricated in a standard 0.35-μm four-metal two-poly CMOS process. Measurement results show that the erasing/writing current is 45 μA, and reading current consumption is 3 μA with a supply voltage of 3.3 V. The data read time is 300 ns/bit.     

SiGe HBT传输电流模型研究

基于SiGe异质结双极晶体管(HBT)大信号等效电路模型,建立了SiGe HBT传输电流模型.重点考虑发射结能带的不连续对载流子输运产生的影响,通过求解流过发射结界面的载流子密度,建立了SiGe HBT传输电流模型.该模型物理意义清晰,拓扑结构简单.对该模型进行了模拟,模拟结果与文献报道的结果符合得较好.将该模型嵌入PSPICE软件中,实现了对SiGe HBT器件与电路的模拟分析,并对器件进行了直流分析,分析结果与文献报道的结果符合得较好.     

Incorporating Graphitic Carbon Nitride (g‐C3N4) Quantum Dots into Bulk‐Heterojunction Polymer Solar Cells Leads to Efficiency Enhancement

Graphitic carbon nitride (g‐C₃N₄) has been commonly used as photocatalyst with promising applications in visible‐light photocatalytic water‐splitting. Rare studies are reported in applying g‐C₃N₄ in polymer solar cells. Here g‐C₃N₄ is applied in bulk heterojunction (BHJ) polymer solar cells (PSCs) for the first time by doping solution‐processable g‐C₃N₄ quantum dots (C₃N₄ QDs) in the active layer, leading to a dramatic efficiency enhancement. Upon C₃N₄ QDs doping, power conversion efficiencies (PCEs) of the inverted BHJ‐PSC devices based on different active layers including poly(3‐hexylthiophene‐2,5‐diyl):[6,6]‐phenyl‐C61‐butyric acid methyl ester (P3HT:PC₆₁BM), poly(4,8‐bis‐alkyloxybenzo(l,2‐b:4,5‐b′)dithiophene‐2,6‐diylalt‐(alkyl thieno(3,4‐b)thiophene‐2‐carboxylate)‐2,6‐diyl):[6,6]‐phenyl C₇₁‐butyric acid methyl ester (PBDTTT‐C:PC₇₁BM), and poly[4,8‐bis(5‐(2‐ethylhexyl)thiophen‐2‐yl)benzo[1,2‐b:4,5‐b′]dithiophene‐co‐3‐fluorothieno [3,4‐b]thiophene‐2‐carboxylate] (PTB7‐Th):PC₇₁BM reach 4.23%, 6.36%, and 9.18%, which are enhanced by ≈17.5%, 11.6%, and 11.8%, respectively, compared to that of the reference (undoped) devices. The PCE enhancement of the C₃N₄ QDs doped BHJ‐PSC device is found to be primarily attributed to the increase of short‐circuit current (J_sc), and this is confirmed by external quantum efficiency (EQE) measurements. The effects of C₃N₄ QDs on the surface morphology, optical absorption and photoluminescence (PL) properties of the active layer film as well as the charge transport property of the device are investigated, revealing that the efficiency enhancement of the BHJ‐PSC devices upon C₃N₄ QDs doping is due to the conjunct effects including the improved interfacial contact between the active layer and the hole transport layer due to the increase of the roughness of the active layer film, the facilitated photoinduced electron transfer from the conducting polymer donor to fullerene acceptor, the improved conductivity of the active layer, and the improved charge (hole and electron) transport.     

Tunable Optical Mode Ferromagnetic Resonance in FeCoB/Ru/FeCoB Synthetic Antiferromagnetic Trilayers under Uniaxial Magnetic Anisotropy

Ferromagnetic resonance (FMR) is one of the most important characteristics of soft magnetic materials, which practically sets the maximum operation speed of these materials. There are two FMR modes in exchange coupled ferromagnet/nonmagnet/ferromagnet sandwich films. The acoustic mode has relatively lower frequency and is widely used in radio‐frequency/microwave devices, while the optical mode is largely neglected due to its tiny permeability even though it supports much higher frequency. Here, a realistic method is reported to enhance the permeability in the optical mode to an applicable level. FeCoB/Ru/FeCoB trilayers are carefully engineered with both uniaxial magnetic anisotropy and antiferromagnetic interlayer exchange coupling. This special magnetic structure exhibits a high optical mode frequency up to 11.28 GHz and a maximum permeability of 200 at resonance. An abnormally low inverse switch field (<200 Oe, less than 1/5 of the single layer) is observed which can effectively switch the system from optical mode with higher frequency into acoustic mode with lower frequency. The optical mode frequency and inverse switch field can be controlled by tailoring the interlayer coupling strengths and the uniaxial anisotropy fields, respectively. The tunable optical mode resonance thus can increase operation frequency while reduce operation field overhead in FMR based devices.