Grain boundary mobility and grain growth behavior in polycrystals with faceted wet and dry boundaries

The effect of an intergranular amorphous film on grain growth behavior has been studied in a faceted model system, BaTiO₃. We prepared two kinds of samples with and without intergranular amorphous films but with the same grain size and density. During annealing the samples at 1350 °C in air, abnormal grain growth occurred in samples with intergranular amorphous films while grain growth was inhibited in samples with dry boundaries, indicating the presence of a pinning force in samples with dry boundaries. To compare the mobilities of dry and wet boundaries, single crystal and polycrystal bilayer samples with or without amorphous films were prepared and annealed at 1340 °C. In contrast to the observed grain growth behavior in polycrystals, the growth of the single crystal into the polycrystal with dry boundaries was faster than that into the polycrystal with wet boundaries, demonstrating the higher mobility of a dry boundary, unlike the conventional understanding.     

Giant thermoelectric Seebeck coefficient of a two-dimensional electron gas in SrTiO3

Enhancement of the Seebeck coefficient (S ) without reducing the electrical conductivity (sigma) is essential to realize practical thermoelectric materials exhibiting a dimensionless figure of merit (ZT=S2 x sigma x T x kappa-1) exceeding 2, where T is the absolute temperature and kappa is the thermal conductivity. Here, we demonstrate that a high-density two-dimensional electron gas (2DEG) confined within a unit cell layer thickness in SrTiO(3) yields unusually large |S|, approximately five times larger than that of SrTiO(3) bulks, while maintaining a high sigma2DEG. In the best case, we observe |S|=850 microV K-1 and sigma2DEG=1.4 x 10(3) S cm-1. In addition, by using the kappa of bulk single-crystal SrTiO(3) at room temperature, we estimate ZT approximately 2.4 for the 2DEG, corresponding to ZT approximately 0.24 for a complete device having the 2DEG as the active region. The present approach using a 2DEG provides a new route to realize practical thermoelectric materials without the use of toxic heavy elements.     

Diffractive properties of obstructed vector Laguerre-Gaussian beam under tight focusing condition

Diffractive and focusing properties of vector Laguerre-Gaussian beams with obstacle are investigated under tight focusing conditions. Using vector diffraction theory, intensity and polarization distributions near the focus at different orthogonal planes are calculated and analyzed for vector Laguerre-Gaussian beams. It is observed that the beam is able to compensate the distortion produced by obstacles when the size of the obstacle is small. The structural changes in the polarization distribution are not the same in different orthogonal planes. The polarization characteristics of the beam show a significant change when the size of the obstacle is large. A comparative study of the focusing and diffractive properties of vector Laguerre-Gaussian and vector Bessel-Gaussian beams has also been performed.     

Reversible Control of Radius and Morphology of Fluorene‐Azobenzene Copolymer Nanowires by Light Exposure

The preparation of photoresponsive polymer nanowires comprising photochromic azobenzene (Azo) and π‐conjugated fluorene (FO) units is reported. Well‐defined and uniform nanowires of the copolymer (PFOAzo) were successfully fabricated by the single particle nanofabrication technique after optimizing the FO:Azo ratio and the development conditions. Azo units in the PFOAzo nanowires underwent reversible trans–cis–trans isomerization upon exposure to ultraviolet or visible light, leading to changes in the radius (between ca. 6 and 8 nm) and morphology (straight or wavy) of the nanowires. The oligo(alkylfluorene) units in the backbone are found to profit the crosslinking efficiency upon high‐energy ion beam irradiation, and more importantly, provide sufficient flexibility to allow reversible photoswitching. This demonstration of the photoluminescence, semiconducting, and mechanical properties of the PFOAzo nanowires is an important advance in the evolution of electro‐mechanical nanomaterials.     

Electrical characterization of very-low energy (0-30 eV) CI-Radical/Ion-beam-etching induced damage using two-dimensional electron gas heterostructures

Damage induced by very low energy (30 eV) Cl reactive ion beam etching (RIBE) and radical etching (RE) has been electrically characterized. GaAs/n-AlGaAs two-dimensional electron gas heterostructures were used as damage sensitive probes. Sheet carrier concentrations and Hall mobilities were measured at 77 K, under dark as well as illuminated conditions. By carefully designing the sample structure, the damaged layer thickness could be estimated by comparing dark and illuminated data. In case of RE, no degradation was detected at depths as shallow as 25 nm from the etched surface. For 30 eV-RIBE, the damage was detected but found to be reasonably small (38% decrease in electron mobility) and shallow (<50 nm). Electrical and optical damage are compared briefly.