Silica films with a single-crystalline mesoporous structure

Films of mesoporous materials attract broad interest because of their wide applicability in the fields of optics and electronics. Although many of these films have a regular local porous structure, the structural regularity has not been used practically yet because of difficulties in its control on macroscopic scales. Here, we demonstrate the preparation of mesoporous silica films whose porous structure can be described as a single crystal, that is, a long-range order of cage-like pores is maintained over centimetre scales. These films have a three-dimensional hexagonal (space group P6(3)/mmc) porous structure, and the in-plane arrangement of the pores is strictly controlled by a polymeric substrate surface that has been treated by rubbing. This new class of single-crystalline films with mesoscopic periodic structure is a significant breakthrough in bottom-up nanotechnology, and could lead to novel devices, for example, optics in a soft X-ray region, and quantum electronics.     

Electron microscopic observation of 137Cs-irradiated rat testis: production of basal laminae for germ cells, despite their absence

Whole body gamma-ray irradiation of rats with caesium-137 (137Cs) at embryonic day 20 induced marked reduction of the weight of the testis. Body weight and other tissues, however, seemed to remain normal. By light microscopy, complete loss of germ cells was observed in the testis. Other components, such as Sertoli cells and interstitial cells, seemed to be normal. The testes from day 8 postpartum rats contained very few spermatogonia compared with newborn rats, indicating loss of germ cells between days 0 and 8. In the adult, 137Cs-irradiated testes showed two conspicuous features other than the loss of germ cells: empty vacuolar spaces between Sertoli cells and multilayered seminiferous tubule basal laminae (lamina densa). The junctional structures (ectoplasmic specializations) between Sertoli cells, however, seemed normal. The thickness of each layer of multilayered basal laminae was the same as that of normal rats and electron-lucent layers similar to lamina lucida were interposed between them. Of the empty vacuolar spaces between Sertoli cells, basal laminae bridge the gap. The basal laminae contained laminin, type IV collagen and heparan sulphate proteoglycan evenly distributed among layers, suggesting a normal composition. Rough estimation of the amount of basal laminae deposited in 137Cs-irradiated rats indicates that it is within a range similar to that in normal testis. These features imply that Sertoli cells are, in part, determined perinatally to produce basal laminae for germ-line cells.     

Defective bone remodelling in osteoprotegerin-deficient mice

Previous studies have reported enhanced osteoclastogenesis, increased bone resorption and osteoporosis in osteoprotegerin (OPG)-deficient mice. In the present study, we show that the tibial epiphyses contain abundant, thin trabeculae lined with numerous osteoclasts and cuboidal osteoblasts. The increase in osteoblasts and osteoclasts was associated with a dramatic increase in calcein labelling of the mineralization fronts and replacement of much of the intertrabecular marrow with numerous alkaline phosphatase-positive preosteoblasts. Furthermore, the discrete, linear cement lines seen in wild-type mice were replaced by a randomly oriented meshwork of cement lines that were stained intensely for tartrate-resistant acid phosphatase and osteopontin in the OPG-/- mice. These indices of accelerated bone remodelling in mutant bone were associated with irregular trabecular surfaces, a disorganized collagen matrix interspersed with amorphous ground substance and numerous fissures between old and new bone. In total, these observations indicate that enhanced osteoclastic activity in OPG-/- epiphyses led to a coupled increase in osteoblast differentiation and activity and an increase in bone remodelling. The high bone turnover, disorganized matrix and impaired attachment of new to old bone in the cement lines in OPG-/- mice appear to cause bone fragility.     

A novel assay method for glycosphingolipid deacylase by enzyme-linked immunochemical detection of lysoglycosphingolipid

Lysoglycosphingolipids consist of a sphingoid long-chain base and monosaccharide or complex sugar, and they lack the fatty acyl group present in native glycosphingolipids. Less than 1 pmol of lyso-Forssman glycolipid and lysoganglioside GM1 were detected on a thin-layer chromatogram by an enzyme-linked immunochemical coloration method with anti-Forssman glycolipid antibody (FOM-1) and cholera toxin B subunit, respectively. Each spot between 1 and 100 pmol lyso-Forssman glycolipid was immunostained as densely as that of the same amount of native Forssman glycolipid. The density of the lyso-Forssman glycolipid spots increased proportionally with increment in the amount of lysoglycolipid. The density of spots of 0.2–100 pmol lysoganglioside GM1 was also proportional to the amount of each lyso-GM1 spot. These results indicated that less than 1 to 100 pmol of deacylated glycosphingolipid was quantifiable by the immunochemical coloration method with sugar chain-specific antibodies. Glycosphingolipid deacylase, which cleaved an amide bond between the sphingoid long-chain base and fatty acyl chain in ceramide of glycosphingolipid, was assayed by detecting the lyso-Forssman glycolipid produced. Lipophilic compounds, recovered from an aliquot of the reaction mixture of Forssman glycolipid and crude enzyme at appropriate times, were analyzed by thin-layer chromatography. It was found that lyso-Forssman glycolipid was produced in the first 1–2 h by the enzyme and production increased with incubation time. This coloration method is more sensitive and specific than the visualization method with a non-specific reagent such as orcinol-sulfuric acid reagent.     

Contribution of electron tunneling transport in semiconductor gas sensor

It was found that thin film devices derived from SnO₂ sols by spin-coating method showed unique thermal behavior of electric resistance in air involving a temperature region where resistance was independent of temperature. The temperature independent resistance region extended up to 400 °C, replacing a region of temperature-conventionally dependent resistance, as film thickness increased. Such unique behavior of resistance was observed also for a brush-coated device but not for screen-coated thick film devices or disk-type device, suggesting that the absence of mechanical forces applied during device fabrication favored the occurrence of the unique behavior. It was shown that the unique behavior could be well accounted for by postulating a combination of electron tunneling transport and conventional migration transport. Calculation of tunneling probability based on a simple model allowed estimating that electron tunneling transport can take place between oxide grains with a probability of 0.01 or larger if a gap in between is narrower than 0.01 nm.     

Wafer-Level Integration Technique of Surface Mount Devices on a Si-Wafer With Vibration Energy and Gravity Force

This paper reports about a novel wafer-level integration technique of discrete surface mount devices (SMDs). It enables wafer-level mounting of plural kinds of SMDs on a silicon (Si)-wafer using vibration and gravity force. Deep holes with 400-m depth are formed on the surface of a Si-wafer by deep reactive ion etching process after general integrated circuit process for positioning of SMDs. A non-conductive adhesive (CYTOP) are coated on the deep holes and it is used to fix the aligned SMDs. SMDs are distributed on a Si-wafer mounted on vibration generator, and then a vibration is applied. The SMDs migrate due to the reduced friction between the wafer surface, and they drop into the holes on the silicon wafer. The size of the holes has an appropriate clearance to the size of SMD. In order to align two or more kinds of SMDs, sizes of the deep holes on a Si-wafer are adjusted to the size of each SMD. SMDs with the largest size are dropped into the holes first, and then the secondary large SMDs are dropped into the holes with the corresponding size. SMDs are finally connected electrically by wire bonding at the final step. In the experiment, two different sizes of SMD were successfully mounted into all the holes on a Si-wafer automatically. This technology will be a wafer-level process technology which is very promising to integrate two or more kinds of discrete elements.     

High speed SOI CMOS image sensor with pinned photodiode on handle wafer

We have fabricated SOI CMOS active pixel image sensor with pinned photodiode on handle wafer. The structure of one pixel is a four-transistor type active pixel image sensor, which consists of a reset and a source follower transistor on seed wafer, and is comprised of a photodiode, a transfer gate, and a floating diffusion on handle wafer. The photodiode could be optimized for better quantum efficiency and low dark currents because the process of a photodiode on handle wafer is independent of that of transistors on seed wafer. Most of the wavelengths are absorbed within the visible range, because the optimized photodiode is located on the handle wafer. The response time of SOI CMOS active pixel sensor was about 2 times faster than that of bulk CMOS active pixel image sensor.     

A comparison of classification algorithms using Landsat-7 and Landsat-8 data for mapping lithology in Canada’s Arctic

To map Arctic lithology in central Victoria Island, Canada, the relative performance of advanced classifiers (Neural Network (NN), Support Vector Machine (SVM), and Random Forest (RF)) were compared to Maximum Likelihood Classifier (MLC) results using Landsat-7 and Landsat-8 imagery. A ten-repetition cross-validation classification approach was applied. Classification performance was evaluated visually and statistically using the global classification accuracy, producer’s and user’s accuracies for each individual lithological/spectral class, and cross-comparison agreement. The advanced classifiers outperformed MLC, especially when training data were not normally distributed. The Landsat-8 classification results were comparable to Landsat-7 using the advanced classifiers but differences were more pronounced when using MLC. Rescaling the Landsat-8 data from 16 bit to 8 bit substantially increased classification accuracy when MLC was applied but had little impact on results from the advanced classifiers.     

Mixed powder coating film using thermoplastic polyester and its alkaline resistance

To improve alkaline resistance, a newly mixed powder coating film using thermoplastic polyethylene terephthalate (PET) was investigated. Two kinds of polyvinyl butyral (PVB) and two kinds of polyamide (PA) were chosen as the secondary polymer. The melting temperatures (T _ms) of these materials were lower than that of primary PET polymer so the mixed powder coating was able to form a dual phase film through a fluidized bed coating process. Microscope and Fourier transform infrared spectroscopy (FTIR) observations revealed that the dual phase structure was indeed successfully formed and there was a secondary layer over the entire surface area of the film. This mixed powder coating film significantly enhanced the alkaline resistance to an environment filled with NaOH solution at 40°C in which a secondary material would be effective in protecting the film. With regard to both alkaline resistance and film formability, PET/PVB was superior to the PET/PA mixture.