从限额设计谈投资控制

文章根据设计阶段投资控制的现状及存在问题,提出只有在设计行业全面推行限额设计,深化设计阶段的投资控制工作,才能从根本上体现全过程投资控制的理念,提高投资控制效果,节约建设工程总投资。     

大规模集成电路浮栅ROM器件总剂量辐射效应

提出了一种大规模集成电路总剂量效应测试方法:在监测器件和电路功能参数的同时,监测器件功耗电流的变化情况,分析数据错误和器件功耗电流与辐射总剂量的关系.根据该方法利用60Co γ射线进行了浮栅ROM集成电路(AT29C256)总剂量辐照实验,研究了功耗电流和出错数量在不同γ射线剂量率辐照下的总剂量效应,以及参数失效与功能失效时间随辐射剂量率的变化关系,并利用外推实验技术预估了电路在空间低剂量率环境下的失效时间.     

Structural trends and dielectric properties of Bi-based pyrochlores

The crystal structure and dielectric properties of Bi-based pyrochlore ceramics with formula Bi_1.5ZnM_1.5O₇ (M=Nb, Ta or Sb) were investigated. The three composition ceramics crystallize in the same pyrochlore structure, but the lattice parameters decrease with decreasing B-site ionic radius. Raman spectra analyses were performed to look for short-range structural differences and indicate that the Ta and Sb incorporation into B-site induce the A-site cations array to be more disordered. Ta or Sb replacing Nb lead to smaller dielectric constant and higher temperature coefficient values. The common characteristics for the three compositions are that they have rather low dielectric loss and high resistivity. The dielectric behavior with temperature for BZS and BZT samples were more flat than that of the BZN ceramics. Dielectric abnormal behavior at high temperature for all samples is typically associated with losses by conduction.     

构件重用技术在雷达软件中的应用

随着雷达软件系统技术的发展 ,软件规模、复杂度也越来越大 ,对开发、调试、功能升级等带来难度。文中提出了利用构件技术开发雷达软件系统的思想 ,并给出利用构件技术研制雷达软件系统的基本思路     

Nonlinear dynamic characteristics of piezoelectric bending actuators under strong applied electric field

Dynamic characteristics of piezoelectric bending actuators under low and high electric fields are studied using the asymptotic theory of nonstationary vibrations. The proposed nonlinear model predicts the changes in fundamental resonant frequencies of the piezoelectric cantilever. The predicted resonance amplitude of the tip deflections of the piezoelectric actuators, which increases with the increase in the magnitude of the electric field, well agrees with the experimental results. Additionally, the decrease in the mechanical quality factor with the increase in the electric field, the tip deflection of piezoelectric actuators near resonance frequency,and the amplitude of the tip deflection at the fundamental vibration tone under an applied electric field varying with time have also been obtained using the present model.     

成形工艺对快速凝固Al—Cu—Mg合金组织和性能的影响

采用自制离心雾化装置制取了快速凝固LY12硬铝合金粉末,研究了以该粉末制成的真空热压件和挤压丝材的组织和性能。结果表明,所得粉末为泪滴状,其显微组织为树枝状晶和胞状晶。真空热压件密度高时所对应的强度高。450℃、10min、150MPa为较合理的工艺,此时粉末颗粒间结合密实,晶粒尺寸没有明显改变。在500℃热挤压时,挤压丝的组织已发生了再结晶,晶粒尺寸仍较细小。挤压丝材的抗拉强度达460MPa,其断口为韧窝状,韧窝尺寸小于3μm,且分布均匀。     

Using thermally stimulated currents to find defective capacitors

BaTiO₃ multilayer capacitors with a nominal capacitance of 3.5nF have been carefully measured using the thermally stimulated current (TSC) technique. When a 300V polarization voltage is applied at room temperature, a new TSC peak appeared in defective sample A after it has been immersed in water. No new peak was found in good-quality sample B after a similar treatment. The accelerated life test shows that sample A hasa much shorter life than sample B in terms of insulation resistance.     

^125I,^131I诱发小鼠精子畸形发生率比较

本文选用 ICR 雄性小鼠,经腹腔分别注射不同剂量的~(125)I 及~(131)I,观察并比较它们对小鼠精子畸形发生率的影响及染毒后睾丸中放射性活度的变化。实验结果表明:(1)~(125)I 染毒后4—5周,0、185、370和555 kBq 各组精子畸形发生率分别为9.00‰、9.57‰、11.6‰及13.9‰;~(131)I 染毒后4—5周,上述各组精子畸形发生率分别为8.50‰、12.5‰、14.7‰和15.5‰;在相同注入量下,~(125)I 与~(131)I 诱发小鼠精子畸形发生率的差异各组均不显著(X~2检验,p>0.05)。(2)~(125)I、~(131)I 染毒后2h 至7天内,两者在睾丸中的放射性活度及变化规律相似,即在染毒后2h 达最高值,每克睾丸中~(125)I 和~(131)I 的放射性活度分别占初始注入量(370 kBq)的0.72％和0.50％,然后迅速下降,至一周时,仅分别占初始注入量的0.035％和0.011％。     

TEM method for rapid and precise evaluation of continuous recrystallization

With the aid of a double-tilt holder in a transmission electron microscope, a new method for a rapid and precise determination of the misorientations of a large number of subgrain or grain boundaries is given in this article. By use of the method, the continuous recrystallization can be rapidly and precisely evaluated when compared to the other conventional methods.     

通用USB接口设备控制器的研究

简要介绍了USB技术的发展与现状；详细论述了USB系统的硬件结构；深入研究了USB系统的特点；探讨了USB系统目前仍在的问题。