中国的主要水问题及水文学的机遇

从水资源开发利用与保护、水旱灾害防治等方面论述中国当前存在的主要水问题：水危机和水浪费同时存在、水污染日趋严重、防洪减灾任重道远、生态环境破坏严重、全球气候变暖产生不利影响；进而论述水文学研究面临的新课题：水文现象的不确定性、人类活动对水文的影响、水位频率计算、水资源开发利用的最佳效应、水资源供需分析、农业节水灌溉机理及水旱灾害的防治，并指出必须加强对这些新课题的研究     

水下封底混凝土与钢护筒粘结力试验

针对吊箱围堰施工中，混凝土与钢板间的粘结力无详实数据的现象，介绍了确定数据的实验模型、实验步骤，并分析了实验结果，以方便施工，指导施工。     

均衡营养早餐的研制

根据膳食营养的要求,以燕麦、爆裂玉米、奶粉、鸡胸肉、胡萝卜和香菜为原料,采用微波技术和冷冻干燥技术生产均衡营养早餐,确定了最佳的配方为燕麦片15g、爆裂玉米8g、奶粉10g、鸡肉丁5g、胡萝卜丁0.5g、香菜干0.5g、盐或糖1g.     

2.5Gb/s和3.125Gb/s速率级0.35μmCMOS限幅放大器

采用了TSMC0.35μm CMOS工艺实现了可用于SONET/SDH2.5Gb/s和3.125Gb/s速率级光纤通信系统的限幅放大器。通过在芯片测试其最小输入动态范围可达8mVp—p，单端输出摆幅为400mVp-p，功耗250mW，含信号丢失检测功能，可以满足商用化光纤通信系统的使用标准。     

基于S-CDMA的HFC上行信道接入协议性能仿真分析

讨论了基于S－CDMA的HFC网上行信道的高效接入协议－SAMA，提出了双信道接入机制的工作原理，并对系统性能进行了分析与计算机仿真，得到一些有意义的结论。     

Formation of low-resistivity poly-Si and SiNx films by Cat-CVD for ULSI application

In this paper, bulk-Si metal–oxide–semiconductor field effect transistors (MOSFETs) are fabricated using the catalytic chemical vapor deposition (Cat-CVD) method as an alternative technology to the conventional high-temperature thermal chemical vapor deposition. Particularly, formation of low-resistivity phosphorus (P)-doped poly-Si films is attempted by using Cat-CVD-deposited amorphous silicon (a-Si) films and successive rapid thermal annealing (RTA) of them. Even after RTA processes, neither peeling nor bubbling are observed, since hydrogen contents in Cat-CVD a-Si films can be as low as 1.1%. Both the crystallization and low resistivity of 0.004 Ω·cm are realized by RTA at 1000 °C for only 5 s. It is also revealed that Cat-CVD SiN_x films prepared at 250 °C show excellent oxidation resistance, when the thickness of films is larger than approximately 10 nm for wet O₂ oxidation at 1100 °C. It is found that the thickness required to stop oxygen penetration is equivalent to that for thermal CVD SiN_x prepared at 750 °C. Finally, complementary MOSFETs (CMOSs) of single-crystalline Si were fabricated by using Cat-CVD poly-Si for gate electrodes and SiN_x films for masks of local oxidation of silicon (LOCOS). At 3.3 V operation, less than 1.0 pA μm⁻¹ of OFF leakage current and ON/OFF ratio of 10⁷–10⁸ are realized, i.e. the devices can operate similarly to conventional thermal CVD process.     

工频电场对ADSS光缆特性的影响

随着电压等级的不断提高,超高压输电线路发展非常迅速.但是这些架空输电线路在运行时,附近存在较高的电场,对周围物体和公用走廊的其它线路会产生影响.电压等级越高,产生的电场影响越大.输电线路产生的电场越来越受到人们的重视.尤其是对于超高压输电线路,由于在电力铁塔上同塔悬挂全介质自承式光缆(ADSS),因此分析工频电场对ADSS光缆特性的影响非常必要.     

发光体MAl2O4:Eu2+,RE3+的长余辉形成机理

提出了Eu^2 激活的MAl2O4:Eu^2 ,RE^3 （M＝Ca,Sr,Ba;RE=Dy,Nd,Ho,Er,Pr,Tb等稀土元素）系列铝酸盐发光体的长余辉发光机理。认为O^2-空位Vo是一种电子俘获陷际，是形成余辉的根本原因，RE^3 的引入使陷阱深度适宜而使余辉时间延长。缺陷在晶格中成簇分布，Vo和碱土金属离子空位VM在高温下可相互缔合。利用电子陷阱模型解释了实验中的一些普遍现象并提出了固相反应法合成此类发光体的工艺改进措施。     

Selective recognition in molecularly imprinted polymer and its chromatographic characterization for cinchonine

A molecularly imprinting polymer (MIP) was synthesized via bulk polymerization under different conditions using anti-ague drug cinchonine (CN) as template. Infrared spectra (IR) results show that the template CNand functional monomer α-methyl acrylic acid (MAA) formed complexes before polymerization and the structure of complexes was simulated by Hyperchem. The results indicate that there are hydrogen bond or ionic bond between functional monomer and template molecule in acetonitrile solution. The MIP made in cold-initiated photo-polymerization has higher separation performance than that in the therm-initiated polymerization. The separation of the isomers CN and cinchonidine (CD) can be successfully obtained when its separate factor α reaches 1.82. Scatchard analysis suggests that the MIP recognizing CN with two classes of binding sites. The partition coefficient Kd, 1 and apparent maximum number nmax, 1 of binding sites with high affinity are 131.43 μmol/L and 58. 90 μmol/g, respectively,while Kd, 2 and nmax, 2 of binding sites with low affinity are 2.32 mmol/L and 169.08 mmol/g, respectively.     

环保易切削黄铜耐腐蚀性能研究

传统易切削黄铜多为铅黄铜，如HPb59-1、HPb63—3等，广泛应用于机械制造工业。铅黄铜零部件报废后将以各种形式污染环境。近年来，随着环保呼声的不断高涨，无铅易切削黄铜的研制成为必然。耐蚀性能是黄铜的重要使用性能之一，也是无铅易切削黄铜能否得到推广应用的关键。本实验以铋代铅并加入一定量的稀土制备的无铅易切削黄铜，其抗脱锌能力比传统易切削黄铜有较大提高。