基于分布式对象技术的NC2000水电厂计算机监控系统软件

介绍了为适应水电厂生产管理水平不断提高的新要求而研制的计算机监控系统软件NC2000。简要地介绍了面向对象技术，分布式对象技术、3层次Client/Server结构等NC2000系统中所采用的新技术以及NC2000的一些主要特点。     

高含硫气田套管腐蚀情况实验研究及建议

在我国近年对高温高压酸性气田的开发过程中,天然气中的H₂S和CO₂对套管造成了严重腐蚀,套管在服役过程中腐蚀穿孔和刺漏现象时有发生,对油气井安全生产威胁极大。为此,在实验室条件下采用自行设计的高温高压循环流动釜,模拟研究了四川盆地某气井中的套管在超高温高压高含H₂S和CO₂的条件下的腐蚀情况--井深4 944～5 738 m井段流速太低、套管壁会有水膜、元素硫附着、积水及腐蚀严重。实验以该气田在役使用的3种套管材料为研究对象,分别研究其在不同采气期（携水采气期和积水采气期）的腐蚀情况。根据实验获得的数据并结合API 579适用性评价方法,计算出被腐蚀套管的抗挤强度和抗内压强度,进而预测套管的安全服役寿命。结果表明：①该井的套管在携水采气期的腐蚀程度较积水采气期的腐蚀程度轻微;②随着开采年限的增加,套管的抗内压强度和抗外挤强度均呈直线下降;③在实验环境下根据剩余强度曲线图预测3种套管的安全服役寿命至少还有10年。建议在气田的开采过程中应尽量增加携水采气期的开采时间,从而延长套管的安全服役寿命。     

四川盆地南部泸州地区凯迪阶—埃隆阶深水页岩沉积演化与有机质富集

四川盆地南部泸州地区深层页岩气富集,凯迪阶五峰组—埃隆阶龙马溪组一段一亚段的富有机质海相页岩是该区页岩气主力产层,明确其沉积环境演化及对有机质富集的控制作用对深化页岩气成藏机理研究具有重要意义。综合利用钻井、录井、测井资料和主量、微量及稀土元素测试数据,系统分析川南地区凯迪阶—埃隆阶黑色页岩的层序地层和沉积环境演化,建立了川南地区有机质富集的古海洋状态模式。基于岩性、典型沉积构造、岩石电性及元素组成,在凯迪阶—埃隆阶识别出5个最大海泛面;综合冰期、最大海泛面、岩性变化及笔石带约束,划分出8个四级层序。在层序地层格架约束下,恢复了古氧相与古生产力演化特征,建立了用于判别优质页岩的古氧相、古生产力的替代系数。凯迪阶五峰组页岩沉积受局限台地的强滞留水体控制,表层高生产力供给对富有机质页岩的发育具有积极意义;鲁丹期开始,冰期冰盖消融造成大规模海侵,海平面上升形成水体分层的强还原环境,沉积龙马溪组下部的富有机质页岩;埃隆期持续海退,海平面较低,陆源注入充足、沉积速率快、氧化还原条件均不利于有机质的保存,但该时期古生产力高,在短期海侵阶段形成龙马溪组上部的富碳、高黏土矿物含量的黑色页岩。     

准噶尔盆地环玛湖凹陷二叠系砂砾岩储层沸石类胶结物的形成及石油地质意义

准噶尔盆地环玛湖凹陷二叠系砂砾岩储层中广泛发育沸石类胶结物。X射线衍射、铸体薄片、扫描电镜、包裹体测温和能谱分析等分析结果表明,研究区沸石类胶结物中浊沸石最为发育,其次为片沸石,方沸石含量较低,其形成条件为富含Na⁺、Ca²⁺、Mg²⁺的弱碱性还原环境。研究区沸石矿物的晶型较为完整,罕见方沸石与片沸石、浊沸石共生,也没有发生方沸石向片沸石和浊沸石转化的现象,表明沸石矿物是在成岩阶段从孔隙水中自形结晶形成;方沸石形成于早成岩阶段A期,其形成温度较低,为60~70℃,片沸石和浊沸石形成于早成岩阶段B期,片沸石形成温度为90~100℃,浊沸石形成温度为100~110℃。岩石学及矿物学特征表明,研究区沸石类胶结物更易发育于杂基含量较低、分选和磨圆度较好、原生孔隙发育、孔隙水易于流动的扇三角洲前缘水下分流河道砂砾岩中。早期形成的方沸石易发生溶蚀但其含量较低,片沸石和浊沸石形成时间较晚,更接近油气充注时期,且稳定性较高,一般很难发生强烈溶蚀,因此研究区沸石的溶蚀作用对储层的储集性能改善不大。研究区压实作用强烈,适度含量的沸石类胶结物可有效抵御砂砾岩储层的压实作用,保留良好的剩余粒间孔及连通的孔隙喉道,为后期酸性流体的进入提供必要的空间基础,有利于溶蚀作用;大量沸石胶结会破坏砂砾岩原有的储集空间,堵塞孔隙喉道,阻碍后期酸性流体的进入,使储层孔隙度和渗透率大幅度降低,因而不利于储层的改善。     

Boosting the Charge Transport Property of Indeno[1,2‐b]fluorene‐6,12‐dione though Incorporation of Sulfur‐ or Nitrogen‐Linked Side Chains

Alkyl chains are basic units in the design of organic semiconductors for purposes of enhancing solubility, tuning electronic energy levels, and tailoring molecular packing. This work demonstrates that the carrier mobilities of indeno[1,2‐b ]fluorene‐6,12‐dione ( IFD )‐based semiconductors can be dramatically enhanced by the incorporation of sulfur‐ or nitrogen‐linked side chains. Three IFD derivatives possessing butyl, butylthio, and dibutylamino substituents are synthesized, and their organic field‐effect transistors (OFET) are fabricated and characterized. The IFD possessing butyl substituents exhibits a very poor charge transport property with mobility lower than 10^?7 cm² V^?1 s^?1. In contrast, the hole mobility is dramatically increased to 1.03 cm² V^?1 s^?1 by replacing the butyl units with dibutylamino groups ( DBA‐IFD ), while the butylthio‐modified IFD ( BT‐IFD ) derivative exhibits a high and balanced ambipolar charge transport property with the maximum hole and electron mobilities up to 0.71 and 0.65 cm² V^?1 s^?1, respectively. Moreover, the complementary metal–oxide–semiconductor‐like inverters incorporated with the ambipolar OFETs shows sharp inversions with a maximum gain value up to 173. This work reveals that modification of the aromatic core with heteroatom‐linked side chains, such as alkylthio or dialkylamino, can be an efficient strategy for the design of high‐performance organic semiconductors.     

PC机和80C196KC单片机之间串行通信的实现

介绍了一种湿型砂质量测试系统中PC机和 80C196KC单片机之间串行通信的实现方法。该方法是基于WINDOWS开发环境 ,依据RS - 2 32串行通信协议 ,运用VisualC 6 .0提供的通信控件MSCOMM和汇编语言得以实现的 ,它能够及时地把 80C196KC单片机采集到的原始数据传送至PC机 ,在PC机进行数据处理完后又将处理结果送回 80C196KC单片机 ,从而实现了PC机与 80C196KC单片机之间原始数据和处理结果的有效传送。     

用1553nm激光脉冲触发GaAs光电导开关的研究

用1553nm飞秒光纤激光器触发半绝缘GaAs光电导开关的实验表明,当光电导开关处于3.33～10.3kV/cm的直流偏置电场并被脉冲宽度200fs且单脉冲能量0.2nJ的激光脉冲照射时,开关表现为线性工作模式,开关输出峰值电压为0.8mV.分析表明,开关对波长为1553nm触发激光脉冲表现出的弱光电导现象起因于半绝缘GaAs材料EL2深能级的作用.     

Efficient and Stable Bifunctional Electrocatalysts Ni/NixMy (M = P,S) for Overall Water Splitting

Development of easy‐to‐make, highly active, and stable bifunctional electrocatalysts for water splitting is important for future renewable energy systems. Three‐dimension (3D) porous Ni/Ni₈P₃ and Ni/Ni₉S₈ electrodes are prepared by sequential treatment of commercial Ni‐foam with acid activation, followed by phosphorization or sulfurization. The resultant materials can act as self‐supported bifunctional electrocatalytic electrodes for direct water splitting with excellent activity toward oxygen evolution reaction and hydrogen evolution reaction in alkaline media. Stable performance can be maintained for at least 24 h, illustrating their versatile and practical nature for clean energy generation. Furthermore, an advanced water electrolyzer through exploiting Ni/Ni₈P₃ as both anode and cathode is fabricated, which requires a cell voltage of 1.61 V to deliver a 10 mA cm^?2 water splitting current density in 1.0 m KOH solution. This performance is significantly better than that of the noble metal benchmark—integrated Ni/IrO₂ and Ni/Pt–C electrodes. Therefore, these bifunctional electrodes have significant potential for realistic large‐scale production of hydrogen as a replacement clean fuel to polluting and limited fossil‐fuels.     

Design and analysis of separate-absorption-transport-charge-multiplication traveling-wave avalanche photodetectors

This paper proposes a novel type of avalanche photodiode-the separate-absorption-transport-charge-multiplication (SATCM) avalanche photodiode (APD). The novel design of photoabsorption and multiplication layers of APDs can avoid the photoabsorption layer breakdown and hole-transport problems, exhibit low operation voltage, and achieve ultra-high-gain bandwidth product performances. To achieve low excess noise and ultra-high-speed performance in the fiber communication regime (1.3/spl sim/1.55 /spl mu/m), the simulated APD is Si-based with an SiGe-Si superlattice (SL) as the photoabsorption layer and traveling-wave geometric structures. The frequency response is simulated by means of a photo-distributed current model, which includes all the bandwidth-limiting factors, such as the dispersion of microwave propagation loss, velocity mismatch, boundary reflection, and multiplication/transport of photogenerated carriers. By properly choosing the thicknesses of the transport and multiplication layers, microwave propagation effects in the traveling-wave structure can be minimized without increasing the operation voltage significantly. A near 30-Gb/s electrical bandwidth and 10/spl times/ avalanche gain can be achieved simultaneously, even with a long device absorption length (150 /spl mu/m) and low operation voltage (/spl sim/12 V). In addition, the ultrahigh output saturation power bandwidth product of this simulated TWAPD structure can also be expected due to the large photoabsorption volume and superior microwave-guiding structure.