Improved method for HgI2 crystal growth and detector fabrication

Instead of the temperature oscillation method (TOM), a modified vapor growth method was applied in this paper to grow large HgI₂ crystals with fewer lattice defects by providing a relatively stable temperature field during growth. And a new processing technique of HgI₂ crystals was developed for detector fabrication by merging solution string-sawing and hand-cleaving. The lattice deformations caused during cleaving were reduced greatly by eliminating passivated layers on the sawed crystal platelets before cleaving.     

含氨烷基聚硅氧烷的研究进展

对含氨烷基聚硅氧烷的研究进行综述，着重介绍含氨烷基聚硅氧烷的种类，性能特点，制备方法及应用等。     

CZF90测井中子发生器使用寿命浅谈

Ｃ／Ｏ测井中采用同步测量技术来分析非弹性γ与俘获γ，但在一些ＭＳＩ Ｃ／Ｏ测井中发现非弹性γ的一小部分或一大部分超前于非弹性门而进入俘获门，我们把这一问题叫做“错位”。“错位”使得Ｃ／Ｏ的ＣＩ值不正常，测井曲线不合格。这样的仪器不能用来测井。吉林油田测井公司碳氧比维修班成功地解决了Ｃ／Ｏ仪器“错位”等技术难题，在该油田所使用的ＣＺＦ９０－９４－０９发生器已测井８８口，累计打靶时间２３０ｈ，并且至今     

国际微电子专用关键设备的现状和发展趋势（考察报告）

讲述了参观Ｓｅｍｉｃｏｎ／ｗｅｓｔ９４′展览会及考察美国和西德的５个公司、１所大学所了解到的投影光刻技术、电子束曝光技术、透镜面形测试技术的发展。     

超细铁粉和氧化铁颗粒的研究

用透射电镜和图像分析仪等研究了超细铁粉和γ-Fe_2O_3粉末的结构、形貌、粒子的平均尺寸以及粒度分布。研究结果表明,多数超细铁粉粒子近似呈球形,并且,铁粉粒子由两相组成,粒子的核心部分是金屑a-Fe,表面的包裹层为氧化物层,它由Fe_3O_4和7-Fe_O_3的混合物组成。氧化层的平均厚度大约占整个粒子直径的20％左右。羰基铁粉粒子(含氧化层)的平均直径为16nm。直径在4～24nm范围的粒子数占总粒子数的91％,而7-Fe_2O_3粉末既有雪茄状粒子,也有小球状粒子。分析表明,球状粒子的平均直径为113nm,雪茄状粒子的平均直径(按<长 宽>/2计算)为148nm。由于超细铁粉粒子很细,且有磁性,制备电镜试样时分散比较困难。本文比较了几种分散方法后,使用了一种较好的分散方法——超声喷管分散法。     

Cerebral blood flow relationships associated with a difficult tone recognition task in trained normal volunteers

Tone recognition is partially subserved by neural activity in the right frontal and primary auditory cortices. First we determined the brain areas associated with tone perception and recognition. This study then examined how regional cerebral blood flow (rCBF) in these and other brain regions correlates with the behavioral characteristics of a difficult tone recognition task. rCBF changes were assessed using H2(15)O positron emission tomography. Subtraction procedures were used to localize significant change regions and correlational analyses were applied to determine how response times (RT) predicted rCBF patterns. Twelve trained normal volunteers were studied in three conditions: REST, sensory motor control (SMC) and decision (DEC). The SMC-REST contrast revealed bilateral activation of primary auditory cortices, cerebellum and bilateral inferior frontal gyri. DEC-SMC produced significant clusters in the right middle and inferior frontal gyri, insula and claustrum; the anterior cingulate gyrus and supplementary motor area; the left insula/claustrum; and the left cerebellum. Correlational analyses, RT versus rCBF from DEC scans, showed a positive correlation in right inferior and middle frontal cortex; rCBF in bilateral auditory cortices and cerebellum exhibited significant negative correlations with RT These changes suggest that neural activity in the right frontal, superior temporal and cerebellar regions shifts back and forth in magnitude depending on whether tone recognition RT is relatively fast or slow, during a difficult, accurate assessment.     

Applications of the finite difference techniques to the compensatedVIP 3 dB directional coupler

A new and simple compensated structure for a vertically installed planar (VIP) 3 dB directional coupler has been studied theoretically as well as experimentally by combining an improved 2-D-general finite difference (2-D-GFD) design procedure with a three-dimensional finite difference time domain (3-D-FDTD) method. The obtained full wave analysis results agree well with the measured ones. The investigations have shown that with this planar compensated structure, a better performance of the VIP coupler in the L-band can be realized by only using the same kind of dielectric substrate for its vertical and horizontal one     

A high-current and high-temperature 6H-SiC thyristor

A 6H-SiC thyristor has been fabricated and characterized. A forward breakover voltage close to 100 V and a pulse switched current density of 5200 A/cm² have been demonstrated. The thyristor is shown to operate under pulse gate triggering for turn-on and turn-off, with a rise time of 43 ns and a fall time of less than 100 ns. The forward breakover voltage is found to decrease by only 4% when the operating temperature is increased from room temperature to 300°C. It is found that anode ohmic contact resistance dominates the device forward drop at high current densities