Pull-out and fragmentation in model fibre composites

An experimental study has been carried out of debonding and fibre rupture in model composites. A single glass rod or fibre was embedded in the centre of a long transparent silicone rubber block. Strains in the rubber in close proximity to the rod or fibre were measured as the specimen was slowly stretched. Pull-out forces, strain distributions, and debonded lengths are compared with the predictions of a simple theory based on a fracture energy criterion for debonding, and taking into account friction at the debonded interface. Experiments were carried out with rods of different diameter, rubber blocks of varied cross-section, and with two levels of adhesion. By extrapolating the debonded length to zero, values of the debonding force in the absence of friction were obtained. They were in accord with fracture energies of about 50 J/m² for weak bonding and about 200 J/m² for strong bonding. Fibre fragmentation lengths were measured also. They were in reasonable agreement with the inferred fracture energies and the measured frictional properties of silicone rubber sliding on glass. In a separate study, it was found that the frictional stress between cast silicone rubber and glass was approximately constant, about 0.1 MPa, rather than proportional to pressure, for pressures exceeding about 0.02 MPa. This feature is attributed to a particularly smooth interface between the two materials.     

Extremum-seeking with variable gain control for intensifying biogas production in anaerobic fermentation.

A state-dependent variable-gain control system is implemented to follow the characteristics of a laboratory-scale up-flow anaerobic fixed-bed reactor dynamically. The transition from one state to another is determined on an hourly basis, depending on difference between the setpoint of the reactor pH and its true value. Considerable improvement of the process stability--reduction of oscillation in both the reactor pH and biogas production rate during high-rate operation, has been achieved, although the control structure is simple and intuitive.     

The origination and optimization of Si/SiO/sub 2/ interface roughness and its effect on CMOS performance

As CMOS device dimensions scale down to 100 nm and beyond, the interface roughness between Si and SiO/sub 2/ has become critical to device performance and reliability. Si/SiO/sub 2/ interface roughness degrades channel mobility decreasing drive currents. The authors have used atomic force microscopy to study surface roughness in the processing of 0.16 /spl mu/m CMOS integrated circuits. All of the process steps that could potentially affect the interface roughness have been studied. The results show that oxidation is the major contributor to the interface roughness. The rms roughness is found to be linearly dependent on oxide thickness. Transistors with Si/SiO/sub 2/ interface rms roughness that has been reduced from 1.6 to 1.1 /spl Aring/ by reducing oxide thicknesses show improved device drive currents. This technique for interfacial smoothing and device performance improvement has the advantage of being easily implemented in today's technology.     

Efficient particle filter-based processing algorithm for clutter suppression and IR point targets enhancement

A novel soft decision-based median subtraction filter is presented for clutter suppression and infrared (IR) point targets enhancement. The decision is made based on a jump Markov model and its state and parameter estimation using a particle filter. The scheme is compared with other conventional clutter background removal techniques and good results are obtained.     

锆(Ⅳ)-3,5-diBr-PADAP-安替比林三元配合物的分光光度研究与应用

本文提出在安替比林存在下,以3,5-diBr-PADAP为显色剂,分光光度测定微量锆的新方法。在pH1～2的HCl介质中,锆(W)与试剂和安替比林形成配合比为1:1:1的红色三元配合物,最大吸收值在615nm波长处,摩尔吸光系数ε=1.35×10~5。锆(Ⅳ)量在0～25μg/25ml范围内,遵守比尔定律。方法简单、快速、准确。若采用钽试剂—苯萃取法分离共存离子,可适用于钽铌矿和合金中痕量锆的测定。     

Self-aligning planarization and passivation for integration applications in III-V semiconductor devices

This work reports an easy planarization and passivation approach for the integration of III-V semiconductor devices. Vertically etched III-V semiconductor devices typically require sidewall passivation to suppress leakage currents and planarization of the passivation material for metal interconnection and device integration. It is, however, challenging to planarize all devices at once. This technique offers wafer-scale passivation and planarization that is automatically leveled to the device top in the 1-3-/spl mu/m vicinity surrounding each device. In this method, a dielectric hard mask is used to define the device area. An undercut structure is intentionally created below the hard mask, which is retained during the subsequent polymer spinning and anisotropic polymer etch back. The spin-on polymer that fills in the undercut seals the sidewalls for all the devices across the wafer. After the polymer etch back, the dielectric mask is removed leaving the polymer surrounding each device level with its device top to atomic scale flatness. This integration method is robust and is insensitive to spin-on polymer thickness, polymer etch nonuniformity, and device height difference. It prevents the polymer under the hard mask from etch-induced damage and creates a polymer-free device surface for metallization upon removal of the dielectric mask. We applied this integration technique in fabricating an InP-based photonic switch that consists of a mesa photodiode and a quantum-well waveguide modulator using benzocyclobutene (BCB) polymer. We demonstrated functional integrated photonic switches with high process yield of >90%, high breakdown voltage of >25 V, and low ohmic contact resistance of /spl sim/10 /spl Omega/. To the best of our knowledge, such an integration of a surface-normal photodiode and a lumped electroabsorption modulator with the use of BCB is the first to be implemented on a single substrate.     

贵冶动力中心二期反渗透系统改造

本文阐述对贵冶动力车间二期反渗透进行改造的成功实践 ,主要从反渗透系统设计、反渗透系统中容易出现的问题及解决方法等进行介绍。     

天津德景住宅与商业

因：用地为东西向长达470m的长条形，其北侧紧邻城市干道。