单片机用于小型燃油蒸汽锅炉控制设计

本文介绍了用单片机实现的小型燃油蒸汽锅炉控制系统 ,对硬件电路组成及其软件设计作了较为详细的介绍。     

谈公务员腐败产生的根源

结合实际,从经济、政治、历史文化、主观心理、技术及国外影响等方面分析了公务员腐败产生的根源。     

Template-assisted synthesis of lamellar mesostructured hydroxyapatites

Novel lamellar mesostructured hydroxyapatites have firstly been synthesized by template-assisted technique. The mild and nontoxic surfactant, phosphoric acid monododecyl ester (MAP), is used to act as a structure-directing template. The structure of sample was characterized by X-ray diffraction, Fourier transform infrared spectroscopy, Scanning electron microscope and Transmission electron microscopy. The results indicate that the obtained sample is a well-organized lamellar mesostructured hydroxyapatite with a uniform layer spacing of 3.64 nm.     

首钢外购焦炭质量恶化后的高炉生产实践

针对焦炭质量劣化的状况，高炉操作以活跃炉缸为主，从上下部调剂入手，采取疏导煤气、控制合理的实际风速和鼓风动能、缓解焦炭在高温区的粉化等措施，有效地改善了高炉的顺行状况，并逐步恢复高炉指标。     

服务器系统的安全配置

为确保服务器的安全,在安装Windows2000系统时,对硬盘分区、组件和管理应用程序及安装顺序的选择应引起足够的注意。文章对Windows2000系统的补丁和安全配置的方法也作了必要说明。     

An iterative ADI-FDTD with reduced splitting error

We present a new iterative alternating-direction-implicit finite-difference time-domain (ADI-FDTD) method. By recognizing the ADI-FDTD method as a special case of a more general iterative approach to solve the Crank-Nicolson (CN) FDTD scheme, the splitting error in ADI-FDTD can be reduced systematically. Numerical examples are used to illustrate the improved accuracy of this method.     

秦山核电厂燃耗深度对DNBR限值的影响分析

本文研究了在秦山核电厂批平均卸料燃耗深度超过原定限值的情况下，为保证电厂的安全运行对DNBR限值进行重新确认的问题。研究过程中，综合考虑了由燃耗加深所引起的核焓升因子的变化和棒弯曲这两种效应对DNBR限值的影响。结果表明，对秦山核电厂而言，在批平均卸料燃耗超过原定限值的情况下，维持原DNBR限值不变仍是安全可行的。     

High-resolution electron microscopy of the twinning and intergrowth in Ca4Al6SO16 and Ca3SrAl6SO16

The microstructures of unhydrated calcium aluminosulphate Ca₄Al₆SO₁₆ and Ca₃SrAl₆SO₁₆ have been studied by high-resolution electron microscopy (HREM). The results showed that twinning and twinned slabs could be introduced taking the [1 1 2] direction as the twin axis so that it seems to be coincident with the law of twinning formed in body-centred cubic structures. A previously reported superlattice with a repeat period twice that of the fundamental structure along the 〈1 1 0〉 direction has also been found in both matrix and twin variants. The close intergrowth of Ca₃SrAl₆SO₁₆ and another phase, possibly Sr₃Al₂O₆ existing as an inclusion between these two twin variants, was determined and clearly revealed by electron diffraction and HREM images. The coherent interphase boundaries and orientation relationship between them can also be deduced.     

Widely tunable bottom-emitting vertical-cavity SOAs

We present bottom-emitting tunable vertical-cavity semiconductor optical amplifiers (VCSOAs) with an effective wavelength tuning range of >20 nm. These devices utilize a high reflectivity micromechanically tunable Bragg mirror as the back reflector. Compared with our first generation tunable VCSOAs, the bottom-emitting devices exhibit a two-fold increase in the effective tuning range as well as a five-fold reduction in the required tuning voltage.     

An experimental study of carrier heating on channel noise in deep-submicrometer NMOSFETs via body bias

In this paper, RF noise in 0.18-mum NMOSFETs concerning the contribution of carrier heating and hot carrier effect is characterized and analyzed in detail via a novel approach that modulates the channel carrier heating and number of hot carriers using body bias. We confirm qualitatively a negligible role of hot carrier effect on the channel noise in deep-submicrometer MOSFETs. For a device under reverse body bias (V_b), even though the increase in hot carrier population is clearly characterized by dc measurements, the device high-frequency noise is found to be irrelevant to the increase in the channel hot carriers. Experimental results show that the high-frequency noise is slightly reduced with the increase in |V_b|, and can be qualitatively explained by secondary effects such as the suppression of nonequilibrium channel noise and substrate induced noise. The reduction of NF_min and R_n with the increase in |V_b| may provide a possible methodology to finely adjust the device high-frequency noise performance for circuit design