Optimised feature map finite-state vector quantisation for imagecoding

An optimised feature map finite-state vector quantisation (referred to as optimised FMFSVQ) is presented for image coding. Based on the block-based gradient descent search algorithm used for motion estimation in video coding, the optimised FMFSVQ system finds a neighbourhood-based optimal codevector for each input vector by extending the associated state codebook stage by stage, thus rendering each state quantiser a variable rate vector quantisation. The optimised FMFSVQ system can be interpreted as a cascade of a finite-state vector quantiser and classified vector quantisers. Furthermore, an adaptive optimised FMFSVQ is obtained. Experiments demonstrate the superior rate-distortion performance of the adaptive optimised FMFSVQ compared with the original adaptive FMFSVQ and the memoryless vector quantisation     

Hierarchical multilevel potential preconditioner for fast finite-element analysis of microwave devices

A robust hierarchical multilevel preconditioning technique is presented for the fast finite-element analysis of microwave devices. The proposed preconditioner is based on a hierarchical multilevel scheme for the vector-scalar potential finite-element formulation of electromagnetic problems. Numerical experiments from the application of the new preconditioner to the finite-element analysis of microwave devices are used to demonstrate its superior numerical convergence and efficient memory usage.     

Experimental and theoretical analysis of energy capability ofRESURF LDMOSFETs and its correlation with static electrical safeoperating area (SOA)

Thermal and electrical destruction of 55 V single and double reduced surface field (RESURF) lateral double-diffused MOSFETs (LDMOSFETs) in smart power ICs are investigated by experiments, simulations, and theoretical modeling. Static safe operating area (SOA) and single pulse dynamic SOA (energy capability) have been studied and correlated. Single RESURF device failure and hence the energy capability is controlled by electrical phenomenon for drain to source voltage near breakdown voltages, whereas the energy capability of the double RESURF device is shown to be controlled by thermal phenomenon for voltage ranges up to about 5 V below the breakdown voltage. Measured energy capability data have been used to obtain critical temperatures for device failure, which decreases with an increase in drain to source voltage. We have empirically shown using experimental data that if the dynamic SOA of the device comes within about 2-5× of the static SOA boundary, the device failure is strongly influenced by avalanche multiplication. An analytical model based on Green's function formulation is derived and proposed which can predict energy capability of LDMOSFETs for a wide range of device geometry. The calculated data show excellent matching with the measurements and are within ±10%. A new technique of distributing power within a device by applying less power at the center and more at the edges is proposed, which realizes significant improvement in energy capability by optimizing the temperature distribution within the device     

多频连续波雷达二次差频测距法的改进

在一定的信噪比下,二次差频测距法只有增加频点数才能增大测距范围或提高测距精度.本文从二次差频测距的基本原理出发详细推导了二次差频法正确测距对输出信噪比的要求,给出了测距精度与输出信噪比之间的关系,然后提出了一种新的差频测距算法——频差组合法,在相同的信噪比和频点数不增加的情况下,提高了测距性能.最后通过仿真,验证了该算法的有效性.     

Metal gate-HfO/sub 2/ MOS structures on GaAs substrate with and without Si interlayer

In this letter, we studied the effects of post-deposition anneal (PDA) time and Si interface control layer (ICL) on the electrical characteristics of the MOS capacitor with high-/spl kappa/ (HfO/sub 2/) material on GaAs. Thin equivalent oxide thickness (EOT<3 nm) with excellent capacitance-voltage (C-V) characteristics has been obtained. The thickness of the Si ICL and PDA time were correlated with C-V characteristics. It was found that high temperature Si ICL deposition and longer PDA time at 600/spl deg/C improved the C-V shape, leakage current, and especially frequency dispersion (<5%).     

Location algorithm for seal imprints on Chinese bank-checks based on region growing

Aslegalconfirmationofbankcheck,sealimprintsare usedinOrientalcountries.Manymethodsonautomatic sealimprintverificationbyacomputerhavebeenan nounced[14],ofwhich,however,mostcannotbeapplied directly,becausetheydealwiththoseoftheimagesof onlyasealimprintother…     

Design of hexagonal filter with source-load coupling

A method for synthesising a novel hexagonal filter with source-load coupling is presented. The equivalent circuit of the lowpass prototype of a general lossless coupled resonator filter is proposed, and the corresponding transfer function t(s) is derived. A novel quasi-elliptic function microstrip hexagonal filter is designed and fabricated. Simulated and measured results are presented. Compared with the conventional cross-coupling filter, the proposed hexagonal filter acquires more than 27.5% size reduction and provides improved selectivity by a relatively small bandwidth     

DCT域网格编码量化及其在图像量化中的应用

本文提出了在离散余弦变换(DCT)域内作网格编码量化(TCQ)的新方法.该方法不仅利用了信号间的时间相关性,而且也利用了信号变换域内的相关性,该方法首先用一维或二维DCT变换减小变换域内的相关性,然后利用卷集编码和信号空间扩展来增大量化信号间的欧氏距离,并用维持比算法寻找最优量化序列.仿真结果表明,基于二维DCT的TCQ方法在相对大的灰度率下,比传统的TCQ方法好2dB左右,与此同时,TCQ又比最优标量量化好2dB左右.该方法还具有编码计算复杂度适中,解码简单以及对误差扩散不敏感的优点.     

高厚径比盲孔电镀

盲孔能够大大的增加板的密度,从而减小板面积。介绍了有关高厚径比盲孔电镀的有关工艺,从激光钻孔、金属化孔和电镀几个方面对孔径4mil以上的盲孔电镀进行了研究。     

采用反射式液晶显示器和有机电致发光器件前后双置组合而成的高环境对比度显示器

一种高环境对比度(A-CR)和大开口率的显示器已经从理论上证明,并通过把一个正常显黑反射型显示器(NB-RLCD)和一个有机电致发光器件(OLED)堆垛的实验加以证明。这种前后双置(以下称为tandem型)的器件组合可以分别在明亮或昏暗的环境下切换NB-RLCD模式或OLED模式。RLCD的正常显黑特性也可以提升OLED模式工作时的A-CR性能。为了在RLCD模式下获得更好的图像品质,一个复杂并且具有传输功能的结构被用于消除镜面反射和提高可视角至CR﹥2:1超过55°的锥面可视角度。另外,这样的结构也可以提高OLED49.4%的表面量子效率。在我们的实验里,忽略环境亮度因素并使A-CR保持在100:1以上。