Analysis and synthesis of on-chip spiral inductors

This paper presents a physically based compact model for estimating high-frequency performance of spiral inductors. The model accurately accounts for skin and proximity effects in the metal conductors as well as eddy current losses in the substrate. The model shows excellent agreement with measured data mostly within 10% across a variety of inductor geometries and substrate dopings up to 20 GHz. A web-based spiral inductor synthesis and analysis tool COILS, which makes use of the compact models, is presented. An optimization algorithm using binary searches speeds up the synthesis of inductor designs.     

The glass fibre-polymer interface: II—Work of fracture and shear stresses

Pull-out experiments have been carried out on single production fibres under carefully controlled conditions. Four parameters were determined. The interfacial yield stresses, of about 9–14 MPa, were very much smaller than the shear strengths of the bulk polymers in the case of an epoxy, whether post-cured or not, and a non-post-cured polyester. Values for the work of fracture of the interface varied from 140 to 300 Jm^?2, and again were less than those of the polymer. Interface failure sometimes took place in the epoxy rather than at the fibre surface, whereas with the polyester it always took place at the fibre surface. After interface failure, pull-out was governed by friction, with maximum shear stresses of 7–10 MPa for polyester, and 21–34 MPa for epoxy, the higher values being obtained for the post-cured resins. Average frictional shear stresses were sometimes less than a half of the maximum shear stress, indicating that the fibre Poisson's shrinkage was playing an important role in the pull-out process. A silicone release agent reduced the frictional shear stresses to 2·5 MPa, with both resins.     

Polynomial-complexity deadlock avoidance policies for sequentialresource allocation systems

The development of efficient deadlock avoidance policies (DAPs) for sequential resource allocation systems (RASs) is a problem of increasing interest in the scientific community, largely because of its relevance to the design of large-scale flexibly automated manufacturing systems. Much of the work on this problem existing in the literature is focused on the so-called single-unit RAS model, which is the simplest model in the considered class of RASs. Furthermore, due to a well-established result stating that, even for single-unit RASs, the computation of the maximally permissive DAP is intractable (NP-hard), many researchers (including our group) have focused on obtaining good suboptimal policies which are computationally tractable (scalable) and provably correct. In the first part of the paper, it is shown, however, that for a large subset (in fact, a majority) of single-unit RASs, the optimal DAP can be obtained in real-time with a computational cost which is a polynomial function of the system size (i.e., the number of resource types and the distinct route stages of the processes running through the system). The implications of this result for the entire class of single-unit RASs are also explored. With a result on the design of optimal DAPs for single-unit RASs, the second part of the paper concentrates on the development of scalable and provably correct DAPs for the more general case of conjunctive RASs     

New advances on a posteriori error on constitutive relation in f.e. analysis

This paper deals with error estimators based on residuals on the constitutive relation which have been developed for the past 20 years at Cachan. Especially in the case of elasticity, these error estimators can become poor in situations where the material and the mesh are strongly anisotropic. The crucial point herein is the construction of equilibrated stress fields from the computed finite element solution. Therefore, in this paper, the approach and in particular this last point are re-examined. Several important modifications are introduced in the concepts and basic techniques. Hence, a new generation of error estimators which seem to be extremely robust upon initial applications has been generated.     

Linear crosstalk in 4×4 semiconductor optical amplifier gateswitch matrix

We report a comprehensive crosstalk investigation of a packaged InGaAsP/InP 4×4 semiconductor optical amplifier gate switch matrix, experimentally as well as theoretically. For a fully loaded switch with the same wavelength on all four inputs, all possible switching combinations are analyzed, thus yielding realistic crosstalk figures. Coherent and incoherent crosstalk phenomena are identified, and a switch crosstalk less than -40 dB has been measured     

Ultralow-voltage boron-doped diamond field emitter vacuum diode

A boron-doped diamond field emitter diode with ultralow turn-on voltage and high emission current is reported. The diamond field emitter diode structure with a built-in cap was fabricated using molds and electrostatic bonding techniques. The emission current versus anode voltage of the capped diamond emitter diode with boron doping, sp² content, and vacuum thermal electric (VTE) treatment shows a very low turn-on voltage of 2 V. A high emission current of 1 μA at an anode voltage of less than 10 V can be obtained from a single diamond tip. The turn-on voltage is significantly lower than comparable silicon field emitters     

Simplified 0.35-μm flash EEPROM process using high-temperatureoxide (HTO) deposited by LPCVD as interpoly dielectrics and peripheraltransistors gate oxide

A simplified flash EEPROM process was developed using high-temperature LPCVD oxide both as flash cells interpoly dielectrics and as peripheral transistors gate oxide (decoding logic). An O₂ anneal at 850°C lowers charge trapping and interface trap density induced by Fowler-Nordheim injection. However, electron trapping remains slightly higher than with dry thermal oxide. Similar memory charge loss and write-erase endurance are obtained as for ONO-insulated cells. HTO thus proves to have the required quality and reliability to be used in flash EEPROMs     

On obtaining shape from color shading

Color and Grassmann-Cayley Coordinates of Shape are considered in this article. The image irradiance equation for colored surfaces and the Grassman manifold λ of orbits Q = {B · h + c; detB ≠ 0} Where c is a vector sweeping the color space H, B is a 3 × 3 matrix, and h(x, y) is the color image of a Lambertian surface assumed to be a linear vector-function of the normal vectors. Different orbits Q(n) correspond to different shapes but they are invariant under color and illuminant transformation. Coordinates of an orbit Q in λ can be computed as 3 × 3 (2 × 2, sometimes) determining the elements of which are values of some linear functionals (receptive fields) of h(x, y). Based on the approach, a shape-from-shading algorithm was developed and successfully tested on the threeband color images of various real objects (an egg, cylinders and cones made of paper, etc.). © 1993 John Wiley & Sons, Inc.