排序方式: 共有109条查询结果,搜索用时 15 毫秒
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可用于器件的侧墙GaAs量子线列阵结构 总被引:1,自引:0,他引:1
本文介绍了一种可以实用的侧墙式GaAs量子线及其列阵结构.沿〔01-1〕方向腐蚀条形的(311)A衬底上,分子束外延生长的各向异性导致了侧墙量子线结构的形成.用光栅刻蚀方法,制备了横向周期为1μm、纵向三层叠加的三维侧墙量子线列阵.阴极荧光谱研究表明:在5K下,发光主要来自量子线区域,在两侧的量子阱区域只有很弱的发光峰;认为低温下载流子主要束缚在量子线区域,在量子阱区域也有少量载流子被外延层涨落产生的局域态所束缚.随温度升高到85K以上直至室温下,只能观察到来自量子线区域的发光峰.这是由于束缚在量子阱局域 相似文献
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讨论了谐振腔中的DBR对InGaAs/GaAs多量子阱SEED面阵光反射特性的影响.采用InGaAs/GaAs作为多量子阱SEED器件的有源区,从而获得了980nm工作波长.设计和分析了InGaAs/GaAs多量子阱SEED中的一种用于倒装焊的新型谐振腔结构.多量子阱材料是用MOCVD系统生长,利用微区光反射谱、PL谱以及X射线双晶衍射对多量子阱材料进行了测量和分析,测量结果表明多量子阱材料具有良好的质量,证明了器件结构的设计和分析是准确的. 相似文献
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The GaNxAs1-x alloy has been investigated which is grown on GaAs (100) substrate by molecular beam epitaxy with a DC-plasma nitrogen source. The samples are characterized by high resolution X-ray diffraction (HRXRD) and low temperature photoluminescence (PL) measurements. Both HRXRD and PL measurements demonstrate that the crystalline and optical qualities of GaNxAs1-x alloy degrade rapidly with the increase of N composition. The nitrogen composition of 4.5 % can be obtained in GaNxAs1-x/GaAs quantum well by optimizing growth conditions,through which a photoluminescence peak of 1201nm is observed at a low temperature (10 K). The dependence of GaNxAs1-x band gap energy on the nitrogen composition in this investigation corresponds very well with that of the theoretical one based on the dielectric model when considering the effect of the strain. At the same time,we also demonstrate that the bowing parameter of GaNxAs1-x alloy is composition dependent. 相似文献
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Long wavelength ( 1.3 or 1.55μm) laser diodes have attracted much attention in re-centyears due to the minimum loss in the optical fiber communication. These wavelengthsare accessible to InGaAsP/InP based on semiconductor activ... 相似文献
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氢原子辅助MBE生长对GaAs外延面形貌的影响 总被引:1,自引:0,他引:1
本文研究了MBE通常生长条件和氢原子辅助生长条件下(100)、(331)、(210)、(311)等表面外延形貌的变化.原子力显微镜AFM测试的结果表明:(100)表面在氢原子辅助生长条件下外延面的岛状起伏变得更为平坦,二维生长模式得到增强;(331)面在两种条件下均显示出台阶积累(stepbunching)式生长,而氢原子辅助生长则减小了台阶结构的横向周期;(210)面在氢原子辅助生长下也使原表面存在的岛状结构尺寸减小;在(311)表面氢原子诱导的作用明显地增强了台阶积累生长模式.本文认为氢原子诱导作用机 相似文献
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