排序方式: 共有98条查询结果,搜索用时 15 毫秒
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以蜈蚣藻多糖和蜈蚣藻多糖与卡拉胶复配胶为涂膜基质,以CaCl2 和甘油为成膜助剂,配制成复合涂膜保鲜剂,研究常温(28~32℃)、相对湿度68%~86% 条件下该复合涂膜保鲜剂对杨梅品质及其生理生化变化的影响。结果表明:常温下经蜈蚣藻多糖和蜈蚣藻多糖与卡拉胶复合涂膜保鲜剂涂膜保鲜的杨梅与对照组相比,果实裂果率、霉烂率、失重率明显降低,抑制了果实的呼吸率;有机酸、VC 等营养成分转化、流失的速度减慢,有效抑制了MDA、花青素含量和相对电导率的升高,使PPO、POD、PAL 酶活性处于较低的水平,延缓果实的衰老过程。其中,蜈蚣藻多糖涂膜保鲜剂的效果优于蜈蚣藻多糖与卡拉胶复合涂膜保鲜剂。 相似文献
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蓝宝石衬底上HVPE-GaN厚膜生长 总被引:1,自引:0,他引:1
采用氢化物气相外延(HVPE)方法,以蓝宝石作衬底,分别在MOCVD-GaN模板和蓝宝石衬底上直接外延生长GaN.模板上的GaN生长表面平整、光亮,但开裂严重.其(0002)的双晶衍射半高宽最低为141″;蓝宝石衬底上直接生长GaN外延层质量较差,其双晶衍射半高宽为1688″,但不发生开裂.HCl的载气流量对预反应有很大的影响.应力产生于外延层和衬底之间的界面处,界面孔洞的存在可以释放应力,减少开裂.光致发光(PL)谱中氧杂质引起强黄光发射. 相似文献
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使用MOCVD外延系统,采用3D-2D生长模式在圆锥图形蓝宝石衬底上生长GaN薄膜。研究发现3D-2D生长模式能够有效的减少GaN薄膜的穿透性位错,其中3D GaN层的生长条件是关键:低V/III比,低温和高生长压力。为了进一步减少TD,3D GaN层的厚度应该与图形衬底上的图形高度接近。当3D GaN层生长结束时,3D GaN层把图形衬底的图形围在其中,具有倾斜的侧壁和(0001)向的上表面,而图形上基本没有沉积物。在接下来的2D生长过程里,GaN沿倾斜侧面快速生长,使得侧面上的穿透性位错产生弯曲,从而减少GaN薄膜的穿透性位错。经过对3D条件的优化,GaN薄膜的穿透性位错降低到1×108cm-2,XRD测试得到的(002),(102)半宽分别达到211弧秒和219弧秒。 相似文献
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The effect of δ-doping and modulation-doping on Si-doped high Al content n-AlxGa1-xN grown by MOCVD 总被引:1,自引:1,他引:0
The effect of periodic delta-doping and modulation-doping on high Al content n-AlxGa1-xN(x = 0.55) epilayers grown by MOCVD has been investigated.Measured by XRD,AFM,contactless sheet resistance, and Hall-effect tests,δ-doped and modulation-doped n-AlxGa1-xN have better crystal quality,surface morphology and electrical properties as compared with uniformly-doped n-AlxGa1-xN.These improvements are attributed to the SiNx growth mask induced by 5-doping layers and the dislocation-blocking effect induced by both growth techniques.In addition,due to the broadened doping profile ascribed to enhanced dopant diffusion at high growth temperatures(1150℃) of n-Al0.55Ga0.45N,modulation-doped n-Al0.55Ga0.45N has similar properties asδ-doped n-Al0.55Ga0.45N. 相似文献
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InAlN epilayers were grown on high quality GaN and A1N templates with the same growth parameters. Measurement results showed that two samples had the same In content of~16%,while the crystal quality and surface topography of the InAlN epilayer grown on the AlN template,with 282.3"(002) full width at half maximum (FWHM) of rocking curve,313.5"(102) FWHM,surface roughness of 0.39 nm and V-pit density of 2.8×108 cm-2,were better than that of the InAlN epilayer grown on the GaN template,309.3",339.1",0.593 nm and 4.2×108 cm-2.A primary conclusion was proposed that both the crystal quality and the surface topography of the InAlN epilayer grown on the AlN template were better than that of the InAlN epilayer grown on the GaN template. Therefore,the AlN template was a better choice than the GaN template for getting high quality InAlN epilayers. 相似文献