面向VCSEL的Al0.98Ga0.02As薄膜湿法氧化的研究

为了系统研究VCSEL制作中的湿法氧化过程和机理, 设计了专门的材料结构并采用MOCVD技术进行外延生长。对经过光刻和干法刻蚀形成的台面结构样品进行不同时间的湿法氧化, 由表面形貌及断面结构来确定氧化程度。研究发现, 氧化时间较短时, Al_0.98Ga_0.02As层的横向氧化深度随氧化时间呈线性变化; 随着氧化时间增加, 横向氧化深度与氧化时间呈抛物线变化, 并渐趋于饱和。此外实验中发现Al_0.98Ga_0.02As层的湿法氧化速度可比Al_0.9Ga_0.1As层高一个数量级, 且Al_0.9Ga_0.1As层的湿法氧化速度随其层厚增加而增大。最后根据修正的一维Deal-Grove氧化模型计算了受限空间内Al_0.98Ga_0.02As层横向氧化深度随氧化时间的变化关系。     

对平板耦合半导体激光器的探索

To obtain a high-power and efficient single-mode laser, a new laser called the slab coupled optical waveguide laser （SCOWL） has been developed. We have simulated its structure and grown the chip with this structure by low-pressure metal organic chemical vapor deposition. We have also produced the broad-area SCOWL and compared it with the traditional structure laser in terms of some performances. This work lays the foundation for further research of ridged lasers with the same structure.