An 88 nm gate-length In_(0.53)Ga_(0.47)As/In_(0.52)Al_(0.48)As InP-based HEMT with f_(max) of 201 GHz

正An 88 nm gate-length In_(0.53)Ga_(0.47)As/In_(0.52)Al_(0.48)As InP-based high electron mobility transistor (HEMT) was successfully fabricated with a gate width of 2×50μm and source-drain space of 2.4μm.The T-gate was defined by electron beam lithography in a trilayer of PMMA/A1/UⅧ.The exposure dose and the development time were optimized,and followed by an appropriate residual resist removal process.These devices also demonstrated excellent DC and RF characteristics:the extrinsic maximum transconductance,the full channel current, the threshold voltage,the current gain cutoff frequency and the maximum oscillation frequency of the HEMTs were 765 mS/mm,591 mA/mm,-0.5 V,150 GHz and 201 GHz,respectively.The HEMTs are promising for use in millimeter-wave integrated circuits.     

一种改进了碰撞电离的超高速InP基SHBT SDD模型

从物理机制上分析了超高速InP/InGaAs SHBT碰撞电离与温度的关系,通过加入表示温度的参数和简化电场计算,得到一种改进的碰撞电离模型. 同时针对自有工艺和器件特性,采用SDD (symbolically defined device）技术建立了一个包括碰撞电离和自热效应的InP/InGaAs SHBT的直流模型. 模型内嵌入HP-ADS中仿真并与测试结果进行比较,准确地拟合了InP/InGaAs SHBT的器件特性.     

基于InP基HEMTs的W波段高增益低噪声放大MMIC

本文基于自主研发的InP基高电子迁移率晶体管工艺设计并制作了一款W波段单级低噪声放大单片毫米波集成电路。共源共栅拓扑结构和共面波导工艺保证了该低噪声放大器紧凑的面积和高的增益,其芯片面积为900 μm×975 μm,84 GHz-100 GHz频率范围内增益大于10 dB,95 GHz处小信号增益达到最大值为15.2 dB。根据调查对比,该单级放大电路芯片具有最高的单级增益和相对高的增益面积比。另外,该放大电路芯片在87.5 GHz处噪声系数为4.3 dB,88.8 GHz处饱和输出功率为8.03 dBm。该低噪声放大器芯片的成功研制对于构建一个W波段信号接收前端具有重要的借鉴意义。     

用于微波放大器的InGaP HBT微波动态大信号波形特性

In wireless mobile communications and wireless local area networks （WLAN）, advanced InGaP HBT with power amplifiers are key components. In this paper, the microwave large signal dynamic waveform characteristics of an advanced InGaP HBT are investigated experimentally for 5.8 GHz power amplifier applications. The microwave large signal waveform distortions at various input power levels, especially at large signal level, are investigated and the reasons are analyzed. The output power saturation is also explained. These analyses will be useful for power amplifier designs.     

考虑载流子速度和耗尽层宽度随电压变化的VBIC模型

针对VBIC (vertical bipolar inter-company）模型对HBT多电压偏置下S参数拟合不够准确的问题,考虑了GaAs基HBT集电区载流子速度和耗尽层宽度随电压的变化关系,建立了随外加电压变化的集电区渡越时间方程. 将得到的渡越时间方程内嵌到VBIC模型中,改进的模型提高了GaAs基HBT多电压偏置下S参数的拟合精度,其在很宽的电压范围内均与实际测试结果符合良好.     

f＝210GHz的超高速InP/InGaAs单异质结晶体管

成功地将Polyimide钝化平坦化工艺应用于InP/InGaAs单异质结晶体管制作工艺中.在Vce=1.1V,Ic=33.5mA的偏置条件下,发射极尺寸为1.4μm×1.5μm的器件,其ft达到210GHz.这种器件非常适合高速低功耗方面的应用,例如超高速数模混合电路以及光学通信系统等.     

InP基转移电子器件接触性能的优化研究

The effect of the annealing time and annealing temperature on Ni/Ge/Au electrode contacts deposited on the n-type InP contact layer has been studied using a circular transmission line model. The minimum specific contact resistance of 3.210 7 cm2was achieved on the low-doped n-type InP contact layer with a 40 s anneal at 425 ℃. In order to improve the ohmic contact and reduce the difficulty in the fabrication of the high doped InP epi-layer, the doping concentration in the InP contact layer was chosen to be 51018cm 3in the fabrication of transferred electronic devices. Excellent differential negative resistance properties were obtained by an electron beam evaporating the Ni/Ge/Au/Ge/Ni/Au composite electrode on an InP epi-layer with a 60 s anneal at 380 ℃.     

f=210GHz的超高速InP/InGaAs单异质结晶体管

成功地将Polyimide钝化平坦化工艺应用于InP/InGaAs单异质结晶体管制作工艺中.在Vce=1.1V,Ic=33.5mA的偏置条件下,发射极尺寸为1.4μm×1.5μm的器件,其ft达到210GHz.这种器件非常适合高速低功耗方面的应用,例如超高速数模混合电路以及光学通信系统等.     

基于SiGe BiCMOS技术的低功耗23G VCO

A 23 GHz voltage controlled oscillator(VCO) with very low power consumption is presented.This paper presents the design and measurement of an integrated millimeter wave VCO.This VCO employs an on-chip inductor and MOS varactor to form a high Q resonator.The VCO RFIC was implemented in a 0.18μm 120 GHz f_t SiGe hetero-junction bipolar transistor(HBT) BiCMOS technology.The VCO oscillation frequency is around 23 GHz,targeting at the ultra wideband(UWB) and short range radar applications.The core of the VCO circuit consumes 1 mA current from a 2.5 V power supply and the VCO phase noise was measured at around -94 dBc/Hz at a 1 MHz frequency offset.The FOM of the VCO is -177 dBc/Hz.     

W-band push–push monolithic frequency doubler in 1-μm InP DHBT technology

A W-band frequency doubler MMIC is designed and fabricated using 1-μm InP DHBT technology. Active balun is employed to transform the single-ended signal into differential output. Push-push configuration loaded with harmonic resonant network is utilized to acquire the second harmonic frequency. A multi-stage differential structure improves the conversion gain and suppresses the fundamental frequency. The MMIC occupies an area of 0.55×0.5 mm2 with 18 DHBTs integrated. Measurements show that the output power is above 5.8 dBm with the suppression of fundamental frequency below -16 dBc and the conversion gain above 4.7 dB over 75-80 GHz.