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排序方式: 共有10000条查询结果,搜索用时 506 毫秒
921.
Khandelia M. Bambha N.K. Bhattacharyya S.S. 《Signal Processing, IEEE Transactions on》2006,54(2):556-569
This paper explores the problem of efficiently ordering interprocessor communication (IPC) operations in statically scheduled multiprocessors for iterative dataflow graphs. In most digital signal processing (DSP) applications, the throughput of the system is significantly affected by communication costs. By explicitly modeling these costs within an effective graph-theoretic analysis framework, we show that ordered transaction schedules can significantly outperform self-timed schedules even when synchronization costs are low. However, we also show that when communication latencies are nonnegligible, finding an optimal transaction order given a static schedule is an NP-complete problem, and that this intractability holds both under iterative and noniterative execution. We develop new heuristics for finding efficient transaction orders, and perform an extensive experimental comparison to gauge the performance of these heuristics. 相似文献
922.
Akhlesh Lakhtakia Joseph A. Sherwin 《Journal of Infrared, Millimeter and Terahertz Waves》2003,24(1):19-23
The potential of orthorhombic materials for perfect lenses is theoretically examined. 相似文献
923.
Yang C.W. Fang Y.K. Lin C.S. Tsair Y.S. Chen S.M. Wang W.D. Wang M.F. Cheng J.Y. Chen C.H. Yao L.G. Chen S.C. Liang M.S. 《Electronics letters》2003,39(21):1499-1501
A novel technique to form high-K dielectric of HfSiON by doping base oxide with Hf and nitridation with NH/sub 3/, sequentially, is proposed. The HfSiON gate dielectric demonstrates excellent device performances such as only 10% degradation of saturation drain current and almost 45 times of magnitude reduction in gate leakage compared with conventional SiO/sub 2/ gate at the approximately same equivalent oxide thickness. Additionally, negligible flatband voltage shift is achieved with this technique. Time-dependent dielectric breakdown tests indicate that the lifetime of HfSiON is longer than 10 years at V/sub dd/=2 V. 相似文献
924.
Thermodynamic and Transport Properties of Liquid HFC-227ea 总被引:1,自引:0,他引:1
The thermal conductivity and heat capacity of liquid 1,1,1,2,3,3,3-hepta-fluoropropane (HFC-227ea) have been studied by a high-frequency thermal-wave method over the temperature range of 294 to 345 K at pressures up to 2.8 MPa. The purity of the samples used throughout the measurements is 99.99 mol%. The experimental uncertainties of the thermal conductivity and heat capacity measurements were estimated to be within ±1.5 and ±2%, respectively. The thermal conductivity of HFC-227ea in the liquid phase decreases as temperature increases, while the pressure has an opposite effect. 相似文献
925.
926.
In studying a series of fibre samples spun in steady-state conditions, the following was found: as a function of the conditions of processing Armos fibre, two structural modifications of the polymer can form; intensive crystallization of the modification corresponding to the 28.7° reflection begins in heat treatment above 220°C; above 320°C, intensive crystallization of the modification corresponding to the 14.25° reflection is observed; at 360°C, symbatic enhancement of the intensities of both reflections with a weak change in the other structural parameters of the fibre is observed. 相似文献
927.
An experimental technique together with a numerical model is proposed with which the diffusion coefficient and the sorption isotherm of water in paint can be measured. Inside a closed vessel, paint films are on stainless-steel plates. Water is present as water vapour in the air and in the paint. After blowing dry or wet air through the vessel for some time, the situation moves to a new equilibrium. The relative humidity of the air inside the vessel is measured as a function of time. From fitting the theoretical/numerical model against the experimental values, follow the diffusion coefficient and the sorption isotherm of water in the paint. The results show large scattering. When the independently measured sorption isotherm is used as an input parameter in the model, the fitting procedure gives much smaller scattering for the diffusion coefficient. 相似文献
928.
A system composed of two heavy holes located in a two-dimensional (2D) quantum well (QW) and bound via mediation of an electron in a neighboring 2D QW is considered. Using a simple qualitative trial wave function, the ground-state energy of this kind of X+ trion is determined in the infinite-hole-mass approximation as a function of the QW spacing. Coordinate dependence of the effective potential binding the holes to each other is calculated for different values of QW spacing. In the adiabatic approximation, a set of dependences describing the X+ trion binding energy as a function of the electron mass to the hole mass ratio is obtained. Several estimates for the trion binding energy in GaAs-and ZnSe-based double-QW heterostructures are given. 相似文献
929.
An accurate printer model that is efficient enough to be used by halftoning algorithms is proposed. The proposed signal processing model (SPM) utilizes a physical model to train adaptive linear combiners (ALCs), after which the average exposure of each subpixel for any input pattern can be calculated using the optimized weight vector. The SPM can be used to model multi-level halftoning and resolution enhancement, as well as traditional halftoning. The SPM is comprised of a single ALC layer followed by a peak-to-average ratio (PAR) correction layer, which serves to produce a PAR of less than 1.5 in the modeled exposure. The PCN (PAR correction network) employs one ALC/pixel and exploits the physics governing the characteristics of exposure in small regions. A relatively small number of training patterns suffices to train the SPM. 相似文献
930.
Vassiliou I. Vavelidis K. Georgantas T. Plevridis S. Haralabidis N. Kamoulakos G. Kapnistis C. Kavadias S. Kokolakis Y. Merakos P. Rudell J.C. Yamanaka A. Bouras S. Bouras I. 《Solid-State Circuits, IEEE Journal of》2003,38(12):2221-2231
The drive for cost reduction has led to the use of CMOS technology in the implementation of highly integrated radios. This paper presents a single-chip 5-GHz fully integrated direct conversion transceiver for IEEE 802.11a WLAN systems, manufactured in 0.18-/spl mu/m CMOS. The IC features an innovative system architecture which takes advantage of the computing resources of the digital companion chip in order to eliminate I/Q mismatch and achieve accurately matched baseband filters. The integrated voltage-controlled oscillator and synthesizer achieve an integrated phase noise of less than 0.8/spl deg/ rms. The receiver has an overall noise figure of 5.2 dB and achieves sensitivity of -75 dBm at 54-Mb/s operation, both referred to the IC input. The transmit error vector magnitude is -33 dB at -5-dBm output power from the integrated power-amplifier driver amplifier. The transceiver occupies an area of 18.5 mm/sup 2/. 相似文献