Robust control of permanent magnet motors: VSS techniques lead tosimple hardware implementations

It is shown how very simple velocity-tracking robust controllers for permanent magnet motors driving nonlinear loads can be designed based on variable structure systems techniques. Very fast dynamics, accurate and robust velocity-tracking are achieved with very simple hardware components without resorting to powerful digital signal processors and related interface hardware. A cascade control structure is used to ensure maximum flexibility. The controller for a DC motor is considered in great detail. Extension to AC synchronous PM motors is also presented. At the different control levels robustness is addressed with specific algorithms and the simplest solution is always selected. The controller architecture for both DC and AC synchronous motor are presented and discussed in the paper. Experimental results related to the control of a DC motor driving a nonlinear load are also shown. They demonstrate feasibility and excellent performances of the proposed approach     

Contact control concepts in manipulation robotics-an overview

This paper presents the state of the art in the control of robotic manipulators in constrained motion tasks. Contact control concepts are classified using different criteria, and their main characteristics are analyzed. For each of the presented contact control concepts, the essential characteristics are stated. The paper covers some early ideas and their later improvements, as well as trends in this field. The advantages and drawbacks of the various control schemes are outlined, and they are compared from the standpoint of their implementation issues. In the paper, all characteristic results in the stability analysis of robotic manipulators in the constrained motion tasks are briefly reported. A new approach to the correct solution of contact tasks control is mentioned as well     

Validation of 3-D curved objects: CAD model and fabricatedworkpiece

This paper proposes a new method to describe and identify a 3-D curved object for the purpose of validating a fabricated object to the design specification. Curved 3-D objects are, in general, difficult to represent and identify because they lack distinct properties such as edges, planes, or cylindrical surfaces which are the building blocks in representing objects. In this paper, the authors propose to use principal axes of a 3-D object to establish a reference for the representation. A method of obtaining an inertia matrix from a 3-D range image is developed. The unique set of principal axes is obtained from the inertia matrix of an object with an arbitrary 3-D position and orientation, and the object can be described uniquely on these principal axes. On the principal axes, an object is described by a set of features describing the shape of the object such as spine, section size, section orientation, and section contraction. The features are used for comparing two objects for the validation purpose. The authors also propose a direct measure of similarity between two objects as a mean-squared difference of radii. As an experiment, two 3-D object models are designed through a CAD package, and fabricated objects are compared with the designed models for validation purposes     

A boost-type converter for DC-supply of fluorescent lamps

A boost type converter is described that is suitable for low-voltage DC-supply of fluorescent lamps. It has inherent lamp current limitation (ballast action) and provides the high voltage pulses and electrode heating that are required for igniting the lamp. The proposed circuit is applicable in automotive, emergency, and portable light sources.<>     

A novel scheme for protection of power semiconductor devicesagainst short circuit faults

Power semiconductor devices find wide application in modern power electronic converters. Protection of these devices against overload/short circuit conditions is of paramount importance. Present day protection topologies employing different circuits have invariably one main drawback in that the fault current reaches the set value before action is initiated to trip the system. This poses a severe stress on the device. Hence an adequate safety margin has to be necessarily provided to prevent excessive device stresses and care has to be taken to see that the device is operated well within its safe operating areas. The present paper proposes a method wherein the slope or rate of rise of the fault current is detected and once the slope exceeds the set reference, action is initiated to trip the system much before the fault current reaches dangerous levels. The method provides a fast means of detection of overload and short circuit currents and can be conveniently adopted for the protection of devices in power transistor/IGBT based inverters against short circuited load conditions or shoot through faults. The possible reduction of stresses in the power devices are also highlighted     

Optoelectronic integration of a GaAs/AlGaAs bistable field effecttransistor (BISFET) and LED

The bistable field effect transistor (BISFET) is a novel inversion-channel switching device exhibiting abrupt current transitions and hysteresis in its output characteristics. The semiconductor structure of the BISFET is compatible with a range of electronic and optoelectronic devices. In this work, integration of a BISFET with an LED is reported. Both devices have been implemented on a single semiconductor substrate using a single fabrication sequence. The BISFET is used to current drive the LED. Abrupt transitions and hysteresis are seen in the optical output from the circuit in the range of gate voltage from 1.75 V to 1.9 V     

Modeling the I-V characteristics of fully depleted submicrometerSOI MOSFET's

In this paper, an analytic current-voltage model for submicrometer fully-depleted (FD) silicon-on-insulator (SOI) MOSFET's is presented. This model takes into account the source/drain series resistances which can be especially high in thin film SOI devices. The effect of drain induced conductivity enhancement is also included, which is important for submicrometer channels. The model is verified by comparison to measured SOI I-V characteristics. Good agreement is obtained for SOI film thicknesses ranging from 40 to 220 nm and effective channel lengths down to 0.25 μm     

Suppression of boron penetration in p+ polysilicon gateP-MOSFETs using low-temperature gate-oxide N2O anneal

It has been reported that high-temperature (~1100°C) N₂ O-annealed oxide can block boron penetration from poly-Si gates to the silicon substrate. However, this high-temperature step may be inappropriate for the low thermal budgets required of deep-submicron ULSI MOSFETs. Low-temperature (900~950°C) N₂O-annealed gate oxide is also a good barrier to boron penetration. For the first time, the change in channel doping profile due to compensation of arsenic and boron ionized impurities was resolved using MOS C-V measurement techniques. It was found that the higher the nitrogen concentration incorporated at Si/SiO₂ interface, the more effective is the suppression of boron penetration. The experimental results also suggest that, for 60~110 Å gate oxides, a certain amount of nitrogen (~2.2%) incorporated near the Si/SiO₂ interface is essential to effectively prevent boron diffusing into the underlying silicon substrate     

Enhancing the brightness of thin-film electroluminescent displaysby improving the emission process

AC thin film electroluminescent (ACTFEL) devices emit light laterally in addition to conventional surface emission. Because of the waveguiding in ACTFEL devices, lateral emission is stronger than surface emission. However, the former is ignored for displays. This note demonstrates that mirrors can be fabricated into substrates to reflect upward the lateral emission, which can then be summed with surface emission for displays. Use of standard silicon and thin film technology has demonstrated that the reflected lateral emission is a factor of three brighter than conventional surface emission. hence the effective efficiency of out-coupling the light has been improved for an ACTFEL device     

Enhancement of oxide break-up by implantation of fluorine inpoly-Si emitter contacted p+-n shallow junctionformation

In this study, it is demonstrated that the incorporation of fluorine can enhance poly-Si/Si interfacial oxide break-up in the poly-Si emitter contacted p⁺-n shallow junction formation. The annealing temperature for breaking up the poly-Si/Si interfacial oxide has been found to be as low as 900°C. As a result, the junction depth of the BF₂-implanted device is much larger than that of the boron-implanted device