Changes in the gaseous H2S barrier properties of damaged silicate coated nylon 6 films

The damage imposed on SiO _x deposited nylon 6 films as a result of abrasion with a cotton cloth and Gelboflex testing was examined by evaluating the rate at which copper plates, which were enveloped by the damaged films, were corroded by H₂S. Abrasion with a cotton cloth caused some micro-cracking of the SiO _x layer and the permeation rate of H₂S approached that of the uncoated nylon 6 film. Damage to the SiO _x layer by twisting and crushing progressed gradually with the number of Gelboflex test cycles and correspondingly the corrosion rate of the copper plates increased. Comparison of the corrosion rates of the copper plates kept in the pouches made of various commercial films with those obtained for the damaged SiO _x deposited nylon 6 films showed a clear relationship between the H₂ permeation rate of the films and the corrosion rate of the copper plates by H₂S.     

Three takes on telecom's troubles

Spectrum asked three IEEE members from the telecommunications sector to comment on the industry's current woes and prospects. Roch Guerin discusses bandwidth as a commodity and how to deal with it. The impact of technological change on telecommunications is enormous and calls for a shift in business models. Technology is making bandwidth a commodity and it should not matter who supplies it. Competition is vital and commodity providers must be decoupled from value providers. Frank Ferrante points out that the Year 2000 crisis resulted in manufacturers being deluged with orders for new upgraded systems. Vast sums were spent to meet the demand in time. However, when Y2K was over, production stayed high and inventories continued to build, while demand effectively stopped overnight. Dazzling new innovations are needed to compel the masses to spend and manufacturers must apply their resources to deliver quickly and efficiently. Jules A. Bellisio discusses the role of engineers in bringing new ideas to the market place. Many engineers have put together ventures for the sole purpose of attracting capital. The underlying technology and business propositions were there solely to lure the unsuspecting. By allowing engineers to use technology simply to cover for a scam, then the profession is also to blame for the current problems.     

Heat Transfer by Radiation through a Vapor Gap under Conditions of Film Boiling of Liquid

Theoretical models of heat transfer by radiation through a vapor gap under conditions of film boiling of liquid are treated, namely, a general wave model for a gap of arbitrary thickness and an approximate model of geometrical optics. Calculations are performed of heat transfer by radiation under conditions of film boiling of water on hot surfaces of refractory metal and molten oxide. Practical recommendations are given to calculate the distribution of the power of absorbed radiation in a water layer.     

NANODEV: A Nanoelectronic-Device Simulation Software System

The concept and structure of the NANODEV simulation software are described. NANODEV deals with nanoelectronic devices that exploit single-electron tunneling, resonant tunneling, or quantum interference. It can use both simplified and sophisticated models and enables one to evaluate a wide variety of devices and configurations. The capabilities of NANODEV are illustrated by examples.     

Robust dual-quantisation multibit sigma-delta modulator

A new dual-quantisation sigma-delta modulator is proposed, which introduces an additional feedback path in the input of the second integrator. In this way, unlike other dual-quantisation architectures, larger signal-to-noise ratios can be obtained by means of aggressive noise-shaping, like in a conventional multibit modulator. The proposed modulator is also shown to be more robust against non-idealities than other dual-quantisation architectures.     

Low supply voltage high-performance CMOS current mirror with low input and output voltage requirements

This paper presents a scheme for the efficient implementation of a low supply voltage continuous-time high-performance CMOS current mirror with low input and output voltage requirements. This circuit combines a shunt input feedback and a regulated cascode output stage to achieve low input resistance and very high output resistance. It can be used as a high-precision current mirror in analog and mixed signal circuits with a power supply close to a transistor's threshold voltage. The proposed current mirror has been simulated and a bandwidth of 40 MHz has been obtained. An experimental chip prototype has been sent for fabrication and has been experimentally verified, obtaining 0.15-V input-output voltage requirements, 100-/spl Omega/ input resistance, and more than 200-M/spl Omega/ (G/spl Omega/ ideally) output resistance with a 1.2-V supply in a standard CMOS technology.     

Design principles underlying circadian clocks.

A fundamental problem for regulatory networks is to understand the relation between form and function: to uncover the underlying design principles of the network. Circadian clocks present a particularly interesting instance, as recent work has shown that they have complex structures involving multiple interconnected feedback loops with both positive and negative feedback. While several authors have speculated on the reasons for this, a convincing explanation is still lacking.We analyse both the flexibility of clock networks and the relationships between various desirable properties such as robust entrainment, temperature compensation, and stability to environmental variations and parameter fluctuations. We use this to argue that the complexity provides the flexibility necessary to simultaneously attain multiple key properties of circadian clocks. As part of our analysis we show how to quantify the key evolutionary aims using infinitesimal response curves, a tool that we believe will be of general utility in the analysis of regulatory networks. Our results suggest that regulatory and signalling networks might be much less flexible and of lower dimension than their apparent complexity would suggest.     

RF microelectronics for W-CDMA mobile communication systems

Third generation (3G) mobile communication systems are now just starting to be introduced. With a maximum data rate of 2 Mbit/s they will make wireless access to broadband data services like the Internet or video applications feasible. Most of the different physical layer technologies summarised under the acronym 3G are based on wideband-CDMA (W-CDMA), in contrast to existing second generation systems, which mostly use TDMA and FDMA. This has severe consequences for the design of the transceiver front-ends. During standardisation these were assumed to have an adequate RF performance yet they still present a performance bottleneck for the system. Starting with a short introduction to UMTS (Universal Mobile Telecommunications System)-the 3G standard to be deployed in Europe and already operating in Japan-this paper describes by way of example some of the test cases specified for UMTS and their impact on the analogue front-end. It is shown that accurate simulation of all the analogue and digital signal processing is necessary in order to predict the RF performance needed of today's commercial RFICs. The paper then presents and reviews some actual design examples. Finally, possible technologies and techniques for application in future mobile terminals are discussed     

A 1-V 10.7-MHz switched-opamp bandpass /spl Sigma//spl Delta/ modulator using double-sampling finite-gain-compensation technique

A 1 V switched-capacitor (SC) bandpass sigma-delta (/spl Sigma//spl Delta/) modulator is realized using a high-speed switched-opamp (SO) technique with a sampling frequency of up to 50 MHz, which is improved ten times more than prior 1 V SO designs and comparable to the performance of the state-of-the-art SC circuits that operate at much higher supply voltages. On the system level, a fast-settling double-sampling SC biquadratic filter architecture is proposed to achieve high-speed operation. A low-voltage double-sampling finite-gain-compensation technique is employed to realize a high-resolution /spl Sigma//spl Delta/ modulator using only low-DC-gain opamps to maximize the speed and to reduce power dissipation. On the circuit level, a fast-switching methodology is proposed for the design of the switchable opamps to achieve a switching frequency up to 50 MHz. Implemented in a 0.35-/spl mu/m CMOS process (V/sub TP/=0.82 V and V/sub TN/=0.65 V) and at 1 V supply, the modulator achieves a measured peak signal-to-noise-and-distortion ratio (SNDR) of 42.3 dB at 10.7 MHz with a signal bandwidth of 200 kHz, while dissipating 12 mW and occupying a chip area of 1.3 mm/sup 2/.