The Plastome Sequences of Triticum sphaerococcum (ABD) and Triticum turgidum subsp. durum (AB) Exhibit Evolutionary Changes,Structural Characterization,Comparative Analysis,Phylogenomics and Time Divergence

The mechanism and course of Triticum plastome evolution is currently unknown; thus, it remains unclear how Triticum plastomes evolved during recent polyploidization. Here, we report the complete plastomes of two polyploid wheat species, Triticum sphaerococcum (AABBDD) and Triticum turgidum subsp. durum (AABB), and compare them with 19 available and complete Triticum plastomes to create the first map of genomic structural variation. Both T. sphaerococcum and T. turgidum subsp. durum plastomes were found to have a quadripartite structure, with plastome lengths of 134,531 bp and 134,015 bp, respectively. Furthermore, diploid (AA), tetraploid (AB, AG) and hexaploid (ABD, AGA^m) Triticum species plastomes displayed a conserved gene content and commonly harbored an identical set of annotated unique genes. Overall, there was a positive correlation between the number of repeats and plastome size. In all plastomes, the number of tandem repeats was higher than the number of palindromic and forward repeats. We constructed a Triticum phylogeny based on the complete plastomes and 42 shared genes from 71 plastomes. We estimated the divergence of Hordeum vulgare from wheat around 11.04–11.9 million years ago (mya) using a well-resolved plastome tree. Similarly, Sitopsis species diverged 2.8–2.9 mya before Triticum urartu (AA) and Triticum monococcum (AA). Aegilops speltoides was shown to be the maternal donor of polyploid wheat genomes and diverged ~0.2–0.9 mya. The phylogeny and divergence time estimates presented here can act as a reference framework for future studies of Triticum evolution.     

Neutron radiation effects on metal oxide semiconductor (MOS) devices

The main purpose of this study is to provide the knowledge and data on Deuterium-Tritium (D-T) fusion neutron induced damage in MOS devices. Silicon metal oxide semiconductor (MOS) devices are currently the cornerstone of the modern microelectronics industry. However, when a MOS device is exposed to a flux of energetic radiation or particles, the resulting effects from this radiation can cause several degradation of the device performance and of its operating life. The part of MOS structure (metal oxide semiconductor) most sensitive to neutron radiation is the oxide insulating layer (SiO₂). When ionizing radiation passes through the oxide, the energy deposited creates electron-hole pairs. These electron-hole pairs have been seriously hazardous to the performance of these electronic components. The degradation of the current gain of the dual n-channel depletion mode MOS caused by neutron displacement defects, was measured using in situ method during neutron irradiation. The average degradation of the gain of the current is about 35 mA, and the change in channel current gain increased proportionally with neutron fluence. The total fusion neutron displacement damage was found to be 4.8 × 10⁻²¹ dpa per n/cm², while the average fraction of damage in the crystal of silicon was found to be 1.24 × 10⁻¹². All the MOS devices tested were found to be controllable after neutron irradiation and no permanent damage was caused by neutron fluence irradiation below 10¹⁰n/cm². The calculation results shows that (n,α) reaction induced soft-error cross-section about 8.7 × 10⁻¹⁴ cm², and for recoil atoms about 2.9 × 10⁻¹⁵ cm², respectively.     

Determination of residual organic matter in extracted oil sands using a low temperature ashing method

The application of a low temperature ashing method for estimating total residual organic matter (toluene insolubles) in oil sands is described. A linear correlation exists between organic carbon content and loss on ignition at 400 ± 10 °C of solvent extracted oil sands. The ratio between total organic carbon and the weight loss on ignition (CT/LOl) owing to the removal of residual organic matter is much lower than that obtained for toluene soluble bitumen fractions, indicating very different chemical composition for the residual organic matter. The measured carbon content of the residual organic matter in oil sands suggests that this material could be a mixture of various fractions contained in resins, asphaltenes, asphaltic acids and humic acids.     

Review on zirconate-cerate-based electrolytes for proton-conducting solid oxide fuel cell

The performance of low-to-intermediate temperature (400–800?°C) solid oxide fuel cells (SOFCs) depends on the properties of electrolyte used. SOFC performance can be enhanced by replacing electrolyte materials from conventional oxide ion (O^2-) conductors with proton (H⁺) conductors because H⁺ conductors have higher ionic conductivity and theoretical electrical efficiency than O^2- conductors within the target temperature range. Electrolytes based on cerate and/or zirconate have been proposed as potential H⁺ conductors. Cerate-based electrolytes have the highest H⁺ conductivity, but they are chemically and thermally unstable during redox cycles, whereas zirconate-based electrolytes exhibit the opposite properties. Thus, tailoring the properties of cerate and/or zirconate electrolytes by doping with rare-earth metals has become a main concern for many researchers to further improve the ionic conductivity and stability of electrolytes. This article provides an overview on the properties of four types of cerate and/or zirconate electrolytes including cerate-based, zirconate-based, single-doped cerate–zirconate and hybrid-doped cerate–zirconate. The properties of the proton electrolytes such as ionic conductivity, chemical stability and sinterability are also systematically discussed. This review further provides a summary of the performance of SOFCs operated with cerate and/or zirconate proton conductors and the actual potential of these materials as alternative electrolytes for proton-conducting SOFC application.     

Recent Developments and Applications of Ionic Liquids in Gas Separation Membranes

Flue gas emissions and the harmful effects of these gases urge to separate and capture these unwanted gases. Ionic liquids due to negligible vapor pressure, thermal stability, and wide electrochemical stability have expanded its application in gas separations. A comprehensive overview of the recent developments and applications of ionic liquid membranes (ILMs) for gas separation is given. The three general classifications of ILMs, such as supported ionic liquid membranes (SILMs), ionic liquid polymeric membranes (ILPMs), and ionic liquid mixed‐matrix membranes (ILMMMs) along with their applications, for the separation of various mixed gases systems is discussed in detail. Furthermore, issues, challenges, computational study, and future perspectives for ILMs are also considered.