Atomic origin of the traps in memristive interface

In recent years,trap-related interfacial transport phenomena have received great attention owing to their potential applications in resistive switching devices and photo detectors.Not long ago,one new type of memristive interface that is composed of F-doped SnO2 and Bi2S3 nano-network layers has demonstrated a bivariate-continuous-tunable resistance with a swift response comparable to the one in neuron synapses and with a brain-like memorizing capability.However,the resistive mechanism is still not clearly understood because of lack of evidence,and the limited improvement in the development of the interfacial device.By combining I-V characterization,electron energy-loss spectroscopy,and firstprinciple calculation,we studied in detail the macro/micro features of the memristive interface using experimental and theoretical methods,and confirmed that its atomic origin is attributed to the traps induced by O-doping.This implies that impurity-doping might be an effective strategy for improving switching features and building new interfacial memristors.     

Surface activation of colloidal indium phosphide nanocrystals

Against general wisdom in crystallization,the nucleation of InP and Ⅲ-Ⅴ quantum dots (QDs) often dominates their growth.Systematic studies on InP QDs identified the key reason for this:the dense and tight alkanoate-ligand shell around each nanocrystal.Different strategies were explored to enable necessary ligand dynamics—i.e.,ligands rapidly switching between being bonded to and detached from a nanocrystal upon thermal agitation—on nanocrystals to simultaneously retain colloidal stability and allow appreciable growth.Among all the surface-activation reagents tested,2,4-diketones (such as acetylacetone) allowed the full growth of InP QDs with indium alkanoates and trimethylsilylphosphine as precursors.While small fatty acids (such as acetic acid) were partially active,common neutral ligands (such as fatty amines,organophosphines,and phosphine oxides) showed limited activation effects.The existing amine-based synthesis of InP QDs was activated by acetic acid formed in situ.Surface activation with common precursors enabled the growth of InP QDs with a distinguishable absorption peak between ～450 and 650 nm at mild temperatures (140-180 ℃).Furthermore,surface activation was generally applicable for InAs and Ⅲ-Ⅴ based core/shell QDs.     

Inducing imperfections in germanium nanowires

Nanowires with inhomogeneous heterostructures such as polytypes and periodic twin boundaries are interesting due to their potential use as components for optical,electrical,and thermophysical applications.Additionally,the incorporation of metal impurities in semiconductor nanowires could substantially alter their electronic and optical properties.In this highlight article,we review our recent progress and understanding in the deliberate induction of imperfections,in terms of both twin boundaries and additional impurities in germanium nanowires for new/enhanced functionalities.The role of catalysts and catalyst-nanowire interfaces for the growth of engineered nanowires via a three-phase paradigm is explored.Three-phase bottom-up growth is a feasible way to incorporate and engineer imperfections such as crystal defects and impurities in semiconductor nanowires via catalyst and/or interfacial manipulation."Epitaxial defect transfer"process and catalyst-nanowire interfacial engineering are employed to induce twin defects parallel and perpendicular to the nanowire growth axis.By inducing and manipulating twin boundaries in the metal catalysts,twin formation and density are controlled in Ge nanowires.The formation of Ge polytypes is also observed in nanowires for the growth of highly dense lateral twin boundaries.Additionally,metal impurity in the form of Sn is injected and engineered via third-party metal catalysts resulting in above-equilibrium incorporation of Sn adatoms in Ge nanowires.Sn impurities are precipitated into Ge bi-layers during Ge nanowire growth,where the impurity Sn atoms become trapped with the deposition of successive layers,thus giving an extraordinary Sn content (＞6 at.％) in Ge nanowires.A larger amount of Sn impingement (＞9 at.％) is further encouraged by utilizing the eutectic solubility of Sn in Ge along with impurity trapping.     

Recent progress in thermoelectric nanocomposites based on solution-synthesized nanoheterostructures

Thermoelectric materials,which can convert waste heat into electricity,have received increasing research interest in recent years.This paper describes the recent progress in thermoelectric nanocomposites based on solution-synthesized nanoheterostructures.We start our discussion with the strategies of improving the power factor of a given material by using nanoheterostructures.Then we discuss the methods of decreasing thermal conductivity.Finally,we highlight a way of decoupling power factor and thermal conductivity,namely,incorporating phase-transition materials into a nanowire heterostructure.We have explored the lead telluride-copper telluride thermoelectric nanowire heterostructure in this work.Future possible ways to improve the figure of merit are discussed at the end of this paper.     

Cesium lead halide perovskite triangular nanorods as high-gain medium and effective cavities for multiphoton-pumped lasing

High-performance multiphoton-pumped lasers based on cesium lead halide perovskite nanostructures are promising for nonlinear optics and practical frequency upconversion devices in integrated photonics.However,the performance of such lasers is highly dependent on the quality of the material and cavity,which makes their fabrication challenging.Herein,we demonstrate that cesium lead halide perovskite triangular nanorods fabricated via vapor methods can serve as gain media and effective cavities for multiphoton-pumped lasers.We observed blue-shifts of the lasing modes in the excitation fluence-dependent lasing spectra at increased excitation powers,which fits well with the dynamics of Burstein-Moss shifts caused by the band filling effect.Moreover,efficient multiphoton lasing in CsPbBr3 nanorods can be realized in a wide excitation wavelength range (700-1,400 nm).The dynamics of multiphoton lasing were investigated by time-resolved photoluminescence spectroscopy,which indicated that an electron-hole plasma is responsible for the multiphoton-pumped lasing.This work could lead to new opportunities and applications for cesium lead halide perovskite nanostructures in frequency upconversion lasing devices and optical interconnect systems.     

Walnut-inspired microsized porous silicon/graphene core–shell composites for high-performance lithium-ion battery anodes

Silicon is considered an exceptionally promising alternative to the most commonly used material, graphite, as an anode for next-generation lithium-ion batteries, as it has high energy density owing to its high theoretical capacity and abundant storage. Here, microsized walnut-like porous silicon/reduced graphene oxide (P-Si/rGO) core–shell composites are successfully prepared via in situ reduction followed by a dealloying process. The composites show specific capacities of more than 2,100 mAh·g^?1 at a current density of 1,000 mA·g^?1, 1,600 mAh·g^?1 at 2,000 mA·g^?1, 1,500 mAh·g^?1 at 3,000 mA·g^?1, 1,200 mAh·g^?1 at 4,000 mA·g^?1, and 950 mAh·g^?1 at 5,000 mA·g^?1, and maintain a value of 1,258 mAh·g^?1 after 300 cycles at a current density of 1,000 mA·g^?1. Their excellent rate performance and cycling stability can be attributed to the unique structural design: 1) The graphene shell dramatically improves the conductivity and stabilizes the solid–electrolyte interface layers; 2) the inner porous structure supplies sufficient space for silicon expansion; 3) the nanostructure of silicon can prevent the pulverization resulting from volume expansion stress. Notably, this in situ reduction method can be applied as a universal formula to coat graphene on almost all types of metals and alloys of various sizes, shapes, and compositions without adding any reagents to afford energy storage materials, graphene-based catalytic materials, graphene-enhanced composites, etc.

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Plasmon enhancement for Vernier coupled single-mode lasing from ZnO/Pt hybrid microcavities

It is essential to develop a single mode operation and improve the performance of lasing in order to ensure practical applicability of microlasers and nanolasers.In this paper,two hexagonal microteeth with varied nanoscaled air-gaps of a ZnO microcomb are used to construct coupled whispering-gallery cavities.This is done to achieve a stable single mode lasing based on Vernier effect without requiring any complicated or sophisticated manipulation to achieve positioning with nanoscale precision.Optical gain and the corresponding ultraviolet lasing performance were improved greatly through coupling with localized surface plasmons of Pt nanoparticles.The ZnO/Pt hybrid microcavities achieved a seven-fold enhancement of intensity of single mode lasing with higher sidemode suppression ratio and lower threshold.The mechanism that led to this enhancement has been described in detail.     

A pH-switched mesoporous nanoreactor for synergetic therapy

Zinc oxide nanoparticles (ZnO NPs),as a new type of pH-sensitive drug carrier,have received much attention.ZnO NPs are stable at physiological pH,but can dissolve quickly in the acidic tumor environment (pH ＜ 6) to generate cytotoxic zinc ions and reactive oxygen species (ROS).However,the protein corona usually causes the non-specific degradation of ZnO NPs,which has limited their application considerably.Herein,a new type of pH-sensitive nanoreactor (ZnO-DOX@F-mSiO2-FA),aimed at reducing the non-specific degradation of ZnO NPs,is presented.In the acidic tumor environment (pH ＜ 6),it can release cytotoxic zinc ions,ROS,and anticancer drugs to kill cancer cells effectively.In addition,the fluorescence emitted from fluorescein isothiocyanate (FITC)-labeled mesoporous silica (F-mSiO2) and doxorubicin (DOX) can be used to monitor the release behavior of the anticancer drug.This report provides a new method to avoid the non-specific degradation of ZnO NPs,resulting in synergetic therapy by taking advantage of ZnO NPs-induced oxidative stress and targeted drug release.     

Nanowire encapsulation with polymer for electrical isolation and enhanced optical properties

Light management and electrical isolation are essential for the majority of optoelectronic nanowire (NW) devices.Here,we present a cost-effective technique,based on vapor-phase deposition of parylene-C and subsequent annealing,that provides conformal encapsulation,anti-reflective coating,improved optical properties,and electrical insulation for GaAs nanowires.The process presented allows facile encapsulation and insulation that is suitable for any nanowire structure.In particular,the parylene-C encapsulation functions as an efficient antireflection coating for the nanowires,with reflectivity down to ＜1％ in the visible spectrum.Furthermore,the parylene-C coating increases photoluminescence intensity,suggesting improved light guiding to the NWs.Finally,based on this process,a NW LED was fabricated,which showed good diode performance and a clear electroluminescence signal.We believe the process can expand the fabrication possibilities and improve the performance of optoelectronic nanowire devices.     

Effects of Ge<Superscript>4+</Superscript> acceptor dopant on sintering and electrical properties of (K<Subscript>0.5</Subscript>Na<Subscript>0.5</Subscript>)NbO<Subscript>3</Subscript> lead-free piezoceramics

Lead-free (K_0.5Na_0.5)(Nb_1-xGe _x )O₃ (KNN-xGe, where x = 0-0.01) piezoelectric ceramics were prepared by conventional ceramic processing. The effects of Ge⁴⁺ cation doping on the phase compositions, microstructure and electrical properties of KNN ceramics were studied. SEM images show that Ge⁴⁺ cation doping improved the sintering and promoted the grain growth of the KNN ceramics. Dielectric and ferroelectric measurements proved that Ge⁴⁺ cations substituted Nb⁵⁺ ions as acceptors, and the Curie temperature (T_C) shows an almost linear decrease with increasing the Ge⁴⁺ content. Combining this result with microstructure observations and electrical measurements, it is concluded that the optimal sintering temperature for KNN-xGe ceramics was 1020°C. Ge⁴⁺ doping less than 0.4 mol.%can improve the compositional homogeneity and piezoelectric properties of KNN ceramics. The KNN-xGe ceramics with x = 0.2% exhibited the best piezoelectric properties: piezoelectric constant d₃₃ = 120 pC/N, planar electromechanical coupling coefficient k_p = 34.7%, mechanical quality factor Q_m = 130, and tanδ = 3.6%.