首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   572317篇
  免费   6477篇
  国内免费   1040篇
电工技术   10667篇
综合类   486篇
化学工业   91162篇
金属工艺   23437篇
机械仪表   18609篇
建筑科学   12722篇
矿业工程   4317篇
能源动力   14796篇
轻工业   46310篇
水利工程   7015篇
石油天然气   15028篇
武器工业   43篇
无线电   60987篇
一般工业技术   117152篇
冶金工业   95891篇
原子能技术   14742篇
自动化技术   46470篇
  2021年   5857篇
  2020年   4285篇
  2019年   5550篇
  2018年   9565篇
  2017年   9670篇
  2016年   10127篇
  2015年   6185篇
  2014年   10504篇
  2013年   26518篇
  2012年   16068篇
  2011年   21435篇
  2010年   17185篇
  2009年   19000篇
  2008年   19228篇
  2007年   18925篇
  2006年   16409篇
  2005年   14851篇
  2004年   14100篇
  2003年   13764篇
  2002年   13333篇
  2001年   12885篇
  2000年   12377篇
  1999年   12061篇
  1998年   27731篇
  1997年   20108篇
  1996年   15678篇
  1995年   12062篇
  1994年   10892篇
  1993年   10642篇
  1992年   8354篇
  1991年   8111篇
  1990年   8006篇
  1989年   7787篇
  1988年   7506篇
  1987年   6766篇
  1986年   6548篇
  1985年   7416篇
  1984年   6735篇
  1983年   6464篇
  1982年   5791篇
  1981年   5912篇
  1980年   5654篇
  1979年   5744篇
  1978年   5676篇
  1977年   6197篇
  1976年   7706篇
  1975年   5121篇
  1974年   4918篇
  1973年   4991篇
  1972年   4286篇
排序方式: 共有10000条查询结果,搜索用时 15 毫秒
81.
Pre-metal-deposition reactive ion etching (RIE) was performed on an Al0.3Ga0.7N/AlN/GaN heterostructure in order to improve the metal-to-semiconductor contact resistance. An optimum AlGaN thickness for minimizing contact resistance was determined. An initial decrease in contact resistance with etching time was explained in terms of removal of an oxide surface layer and/or by an increase in tunnelling current with the decrease of the AlGaN thickness. The presence of a dissimilar surface layer was confirmed by an initial nonuniform etch depth rate. An increase in contact resistance for deeper etches was experienced. The increase was related to depletion of the two-dimensional (2-D) electron gas (2-DEG) under the ohmics. Etch depths were measured by atomic force microscopy (AFM). The contact resistance decreased from about 0.45 Ωmm for unetched ohmics to a minimum of 0.27 Ωmm for 70 Å etched ohmics. The initial thickness of the AlGaN layer was 250 Å. The decrease in contact resistance, without excessive complications on device processing, supports RIE etching as a viable solution to improve ohmic contact resistance in AlGaN/GaN HEMTs  相似文献   
82.
Since code division multiple access systems in multipath environments suffer from multiple access interference (MAI), multiuser detection schemes should be used in the receivers. Parallel interference cancellation (PIC) is a promising method to combat MAI due to its relatively low computational complexity and good performance. It is shown that the complexity of PIC is still high for realistic scenarios in terms of the symbol rate, the number of users, spreading gain, and multipath components. However, two novel methods are introduced to reduce significantly the complexity without sacrificing performance. The first approach, called reduced PIC, takes advantage of the composition of the interference to concentrate interference cancellation only on significant terms. The second approach, called differential PIC, exploits the multistage character of PIC to avoid unnecessary double calculations of certain terms in consecutive stages. It is shown that a combination of both approaches leads to a performance very close to the single-user bound whereas the complexity can be kept on the order of the conventional RAKE receiver  相似文献   
83.
We have studied the optical power losses due to multiple curvatures in polymethylmetacrylate (PMMA) plastic optical fibers (POFs) of different numerical apertures (NAs) and attenuation. The fibers were tested for several configurations in order to assess the influence of different types of curved-to-straight fiber transitions in the amount of power radiation. We found that losses are below the standards for all tested fiber types, and thus, they are a suitable choice for local area network (LAN) applications. In addition, our results revealed the presence of modal interactions as confirmed using an experimental procedure to estimate the mode coupling strength for the same fibers.  相似文献   
84.
85.
Integrated chaos generators   总被引:4,自引:0,他引:4  
This paper surveys the different design issues, from mathematical model to silicon, involved in the design of analog CMOS integrated circuits for the generation of chaotic behavior  相似文献   
86.
This paper describes a sequential tripping strategy used in a wide area back-up protection expert system (BPES) to combat situations in which protection relays have maloperated or information is missing. The BPES is an innovative back-up protection scheme designed to prevent the occurrence of widespread blackouts. The BPES evaluates the certainty that transmission lines are likely to be affected by the fault and uses a sequential tripping strategy to isolate the fault if a firm decision is not available due to maloperated relays and/or missing information. The mode of analysis and the sequential tripping strategy ensures that the BPES will clear a fault at minimum risk to the network. An example is included to demonstrate how the certainty factor based sequential tripping strategy is employed by the BPES to clear a fault which occurred on the South Western part of the UK National Grid System  相似文献   
87.
88.
89.
90.
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号