Using a GPU to Accelerate Die and Mold Fabrication

The authors present a GPU-based method for generating and verifying cutter paths for numerically controlled milling. A CAM system based on this technology is now employed in production at Mazda Motor Corporation for manufacturing stamping dies. This system can compute cutter paths more than 20 times faster than previous methods     

Syntheses and structural properties of four Rb-aluminosilicate zeolites

Four types of Rb-aluminosilicate zeolites were hydrothermally synthesized in pure phase for the first time from Rb-aluminosilicate gels without using any organic structure-directing agent (SDA) under stirring conditions. The crystal structure of each zeolite was refined by Rietveld analysis of the X-ray diffraction (XRD) data. These crystal structures were confirmed to be Rb-mordenite, Rb-merlinoite, a new aluminosilicate zeolite with an ATT framework topology, and Rb-offretite denoted by RMA-1, RMA-2, RMA-3, and RMA-4, respectively. The Si/Al ratio of RMA-1 with an MOR topology varied from 5.3 to 8.0; however, the variation of the Si/Al ratios of the other zeolites was rather small. The crystal system of RMA-2 was tetragonal with space group I4/mmm, where two Rb sites were distributed at the center of an 8-membered ring (MR). On the other hand, two Rb sites in RMA-3 were located at the center of the 8-MR in small two cages. The structure of RMA-4 was identified as the OFF type with a local disorder or defect, which included a small amount of an intergrown ERI phase.     

Threshold voltage uniformity and characterization of microwaveperformance for GaAs/AlGaAs high electron-mobility transistors grown onSi substrates

We report on DC and microwave characteristics for high electron-mobility transistors (HEMT's) grown on Si substrates by metal-organic chemical vapor deposition (MOCVD). Threshold voltage (V _th) distribution in a 3-in wafer shows standard deviation of V_th (σV_th) of 36 mV with V_th of -2.41 V for depletion mode HEMT's/Si and σV_th of 31 mV with V_th of 0.01 V for enhancement mode, respectively. The evaluation of V_th in a 1.95×1.9 mm² area shows high uniformity for as-grown HEMT's/Si with σV_th of 9 mV for V_th of -0.10 V, which is comparable to that for HEMT's/GaAs. Comparing the V_th distribution pattern in the area with that for annealed HEMT's/Si, it is indicated that the high uniformity of V_th is obtained irrelevant of a number of the dislocations existing in the GaAs/Si. From microwave characteristic evaluation for HEMT's with a middle-(10~50 Ω·cm) and a high-(2000~6000 Ω·cm) resistivity Si substrate using a new equivalent circuit model, it is demonstrated that HEMT's/Si have the disadvantage for parasitic capacitances and resistances originated not from the substrate resistivity but from a conductive layer at the Si-GaAs interface. The parasitic parameters, especially the capacitances, can be overcome by the reduction of electrode areas for bonding pads and by the insertion of a dielectric layer under the electrode, which bring high cut-off frequency (f_T) and maximum frequency of operation (f_max) of 24 GHz for a gate length of 0.8 (μm). These results indicate that HEMT's/Si are sufficiently applicable for IC's and discrete devices and have a potential to be substituted for HEMT's/GaAs     

Strongyloidiasis associated with nephrotic syndrome

We report a nephrotic syndrome patient with eosinophilia who developed ileus, epigastralgia and malabsorption due to strongyloidiasis which became symptomatic by steroid therapy. The patient was then treated with thiabendazole and recovered. A percutaneous renal biopsy revealed minimal change nephrotic syndrome. This renal injury may be brought on by severe infection of Strongyloides stercoralis. It is important to rule out strongyloidiasis prior to corticosteroid therapy to patients from eosinophilia endemic areas.     

Novel Constitutive Equation for Predicting Dynamic Recrystallization During Hot Working Considering the Efficiency of Power Dissipation

The efficiency of power dissipation (η) in a dynamic material model has been conventionally used for qualitative predictions to estimate the hot working conditions at which dynamic recrystallization (DRX) is dominant. However, predicting the quantitative value of the DRX fraction (X_DRX) from η remains a challenge. In this paper, a constitutive equation is proposed to quantitatively predict X_DRX using η. The proposed equation for describing X_DRX is derived from the reaction rate equation using the assumption that the DRX rate depends on η. The proposed equation is verified via hot compression tests of equiaxed Ti–6Al–4V ELI alloys (Ti-64) in the (α + β) region. The predicted and experimental X_DRX values are found to be generally consistent with one another, exhibiting an average absolute error of 0.05. Furthermore, the proposed equation provides the same level of prediction accuracy as the conventional Johnson–Mehl–Avrami–Kolmogorov (JMAK) equation. Therefore, the proposed equation can be used to quantitatively predict X_DRX following hot compression tests of equiaxed Ti-64. Moreover, compared with the JMAK equation, the proposed equation is expressed in fewer parameters and constant terms. It is, thus, expected to facilitate the quantitative prediction of X_DRX.

     

Effect of Silicon Dioxide on the Thermal Diffusivity of Aluminum Nitride Ceramics

The thermal diffusivity of AlN ceramics was significantly decreased by the addition of SiO₂. The AlN ceramics with 4 wt% SiO₂ could not be densified by pressureless sintering in the temperature range 1400° to 1800°C. The thermal diffusivity of these samples was very low because of their porous structure. The AlN ceramics containing 2, 4, and 8 wt% SiO₂ were densified by hot-pressing and also had low thermal diffusivity. In these samples, the grains of the 27R polytype that resulted from the reaction between AlN and SiO₂ were dispersed, obstructing the conduction of heat. The relation between the amount of 27R polytype and the thermal diffusivity of the AlN ceramics was determined.     

Protective effect of phytic acid hydrolysis products on iron-induced lipid peroxidation of liposomal membranes

Beneficial effects of dietary phytic acid (myo-inositol hexaphosphate; IP₆) have often been explained by its strong iron ion-chelating ability, which possibly suppresses iron ion-induced oxidative damage in the gastrointestinal tract. Because phytic acid is hydrolyzed during digestion, this work aimed to know whether its hydrolysis products (IP_2′ IP_3′, IP_4′ and IP₅) could still prevent iron ion-induced lipid peroxidation. Studies using liposomal membranes demonstrated that hydrolysis products containing three or more phosphate groups are able to inhibit iron ion-induced lipid peroxidation although their effectiveness decreased with dephosphorylation. Similarly, they also prevented iron ion-induced decomposition of phosphatidylcholine hydroperoxide. These results demonstrate that intermediate products of phytic acid hydrolysis still possess iron ion-chelating ability, and thus they can probably prevent iron ion-induced lipid peroxidation in biological systems.     

Photocatalytic H2 evolution under visible light irradiation on Zn1-x Cu x S solid solution

The H₂ evolution reaction from an aqueous Na₂SO₃ solution proceeded with 3.7% quantum yield under visible light irradiation (λ > 420 nm) on a Zn_0.957Cu_0.043S solid solution photocatalyst without co‐catalysts such as Pt. This revised version was published online in July 2006 with corrections to the Cover Date.