Contiguous and Atomically Thin Pt Film with Supra‐Bulk Behavior Through Graphene‐Imposed Epitaxy

The nature of the atomic configuration and the bonding within epitaxial Pt‐graphene films is investigated. Graphene‐templated monolayer/few‐multilayers of Pt, synthesized as contiguous 2D films by room temperature electrochemical methods, is shown to exhibit a stable {100} structure in the 1–2 layer range. The fundamental question being investigated is whether surface Pt atoms rendered in these 2D architectures are as stable as those of their bulk Pt counterparts. Unsurprisingly, a single layer Pt on the graphene (Pt_1ML/GR) shows much larger Pt dissociation energy (?7.51 eV) than does an isolated Pt atom on graphene. However, the dissociation energy from Pt_1ML/GR is similar to that of bulk Pt(100), ?7.77 eV, while in bi‐layer Pt on the graphene (Pt_2ML/GR), this energy changes to ?8.63 eV, surpassing its bulk counterpart. At Pt_2ML/GR, the dissociation energy also slightly surpasses that of bulk Pt(111). Bulk‐like stability of atomically thin Pt–graphene results from a combination of interplanar Pt? C covalent bonding and inter/intraplanar metallic bonding. This unprecedented stability is also accompanied by a metal‐like presence of electronic states at the Fermi level. Such atomically thin metal‐graphene architectures can be a new stable platform for synthesizing 2D metallic films with various applications in catalysis, sensing, and electronics.     

A Unified Approach to Submicron DC MOS Transistor Modeling for Low-Voltage ICs

A unified single-equation approach for the MOS transistordrain current modeling for energy-efficient submicron MOS circuitsis presented. Instead of three sets of separate equations forthe triode, saturation, and weak inversion regions, only a continuousexpression which is valid to describe the behavior of drain currentand the derivatives in all operation regions can be realizedby using a combination of hyperbola, sigmoid, and interpolationmethods. The model expression can predict accurate results forthe current, output conductance, and transconductance with continuousand smooth characteristics. The simulation results agree wellwith experimental data.     

Accurate modeling and parameter extraction for MOS transistorsvalid up to 10 GHz

Accurate modeling and efficient parameter extraction of the small signal equivalent circuit of submicrometer MOS transistors for high-frequency operation are presented. The equivalent circuit is based on a quasi-static approximation which was found to be adequate in the gigahertz range if the extrinsic components are properly modeled. It includes the complete intrinsic quasi-static MOS model, the series resistances of gate, source, and drain, and a substrate coupling network. Direct extraction is performed by Y-parameter analysis on the equivalent circuit in the linear and saturation regions of operation. The extracted results are physically meaningful and can be used to “de-embed” the extrinsic effects such as the substrate coupling within the device. Good agreement has been obtained between the simulation results of the equivalent circuit and measured data up to 10 GHz     

A source authentication scheme based on message recovery digital signature for multicast

The source authentication is an important issue for the multicast applications because it can let the receiver know whether the multicast message is sent from a legal source or not. However, the previously related schemes did not provide the confidentiality for data packets. In addition, the communication costs of these schemes are still high for real‐time applications in the multicast environments. To solve the aforementioned problems, we propose a new source authentication scheme based on message recovery signature for multicast in this paper. In the proposed scheme, the encrypted data can be embedded in the digital signature, so the communication loads can be greatly reduced. In addition, the digital signature contains the encrypted data, and thus the confidentiality of data packets can be well protected. According to the aforementioned advantages, the proposed scheme is securer and more efficient than the related works for the real‐time applications. Copyright © 2013 John Wiley & Sons, Ltd.     

Diagrammatic Separation of Different Crystal Structures of A2BX4 Compounds Without Energy Minimization: A Pseudopotential Orbital Radii Approach

The A₂BX₄ family of compounds manifest a wide range of physical properties, including transparent conductivity, ferromagnetism, and superconductivity. A 98% successful diagrammatic separation of the 44 different crystal structures of 688 oxide A₂BX₄ compounds (96% for 266 oxide‐only) is described by plotting the total radius of the A atom R_A versus the radius of the B atom R_B for many A₂BX₄ compounds of known structure types and seeking heuristically simple, straight boundaries in the R_A versus R_B plane that best separate the domains of different structure types. The radii are sums R_A = R_s(A) + R_p(A) of the quantum‐mechanically calculated “orbital radii” R_s(R_p), rather than empirical radii or phenomenological electronegativity scales. These success rates using first‐principles orbital radii uniformly exceed the success rates using classic radii. Such maps afford a quick guess of the crystal structure of a yet unmade A₂BX₄ compound by placing its atomic orbital radii on such maps and reading off its structure type.     

Interface Engineering for Organic Electronics

The field of organic electronics has been developed vastly in the past two decades due to its promise for low cost, lightweight, mechanical flexibility, versatility of chemical design and synthesis, and ease of processing. The performance and lifetime of these devices, such as organic light‐emitting diodes (OLEDs), photovoltaics (OPVs), and field‐effect transistors (OFETs), are critically dependent on the properties of both active materials and their interfaces. Interfacial properties can be controlled ranging from simple wettability or adhesion between different materials to direct modifications of the electronic structure of the materials. In this Feature Article, the strategies of utilizing surfactant‐modified cathodes, hole‐transporting buffer layers, and self‐assembled monolayer (SAM)‐modified anodes are highlighted. In addition to enabling the production of high‐efficiency OLEDs, control of interfaces in both conventional and inverted polymer solar cells is shown to enhance their efficiency and stability; and the tailoring of source–drain electrode–semiconductor interfaces, dielectric–semiconductor interfaces, and ultrathin dielectrics is shown to allow for high‐performance OFETs.     

Heat transfer augmentation in 3D internally finned and microfinned helical tube

Experiments are performed to investigate the single-phase flow and flow-boiling heat transfer augmentation in 3D internally finned and micro-finned helical tubes. The tests for single-phase flow heat transfer augmentation are carried out in helical tubes with a curvature of 0.0663 and a length of 1.15 m, and the examined range of the Reynolds number varies from 1000 to 8500. Within the applied range of Reynolds number, compared with the smooth helical tube, the average heat transfer augmentation ratio for the two finned tubes is 71% and 103%, but associated with a flow resistance increase of 90% and 140%, respectively. A higher fin height gives a higher heat transfer rate and a larger friction flow resistance. The tests for flow-boiling heat transfer are carried out in 3D internally micro-finned helical tube with a curvature of 0.0605 and a length of 0.668 m. Compared with that in the smooth helical tube, the boiling heat transfer coefficient in the 3D internally micro-finned helical tube is increased by 40-120% under varied mass flow rate and wall heat flux conditions, meanwhile, the flow resistance is increased by 18-119%, respectively.     

Modeling and simulation of 2D lithium‐ion solid state battery

The goal of the work presented here was to develop a simulation approach for studying the effects of materials and geometry on the performance of Li‐ion Solid State Batteries (SSB). Simulation provides the opportunity to explore, with ease, different material properties and cell geometries to optimize a Li‐ion SSB's performance. Simulations shown in this paper are time‐dependent and consider electrochemical reaction, heat transfer, the diffusion of Li‐ions and electrons in the electrolyte, and solid Li diffusion in the positive electrode. A 2D model was simulated and the results shown. The simulations were able to show discharge curves, heat flux, the concentration of Li‐ions, electrons, and solid Li at any time in the discharge cycle. Copyright © 2015 John Wiley & Sons, Ltd.