Growth and optical properties of In x Ga1−x P nanowires synthesized by selective-area epitaxy

Ternary Ⅲ-Ⅴ nanowires (NWs) cover a wide range of wavelengths in the solar spectrum and would greatly benefit from being synthesized as position-controlled arrays for improved vertical yield,reprodudbility,and tunable optical absorption.Here,we report on successful selective-area epitaxy of metal-particle-free vertical InxGa1-xP NW arrays using metal-organic vapor phase epitaxy and detail their optical properties.A systematic growth study establishes the range of suitable growth parameters to obtain uniform NW growth over a large array.The optical properties of the NWs were characterized by room-temperature cathodoluminescence spectroscopy.Tunability of the emission wavelength from 870 nm to approximately 800 nm was achieved.Transmission electron microscopy and energy dispersive X-ray measurements performed on crosssection samples revealed a pure wurtzite crystal structure with very few stacking faults and a slight composition gradient along the NW growth axis.     

Trap State Effects in PbS Colloidal Quantum Dot Exciton Kinetics Using Photocarrier Radiometry Intensity and Temperature Measurements

Colloidal quantum dots (CQDs) have attracted significant interest for applications in electronic and optoelectronic devices such as photodetectors, light-emitting diodes, and solar cells. However, a poor understanding of charge transport in these nanocrystalline films hinders their practical applications. The photocarrier radiometry (PCR) technique, a frequency-domain photoluminescence method spectrally gated for monitoring radiative recombination photon emissions while excluding thermal infrared photons due to non-radiative recombination, has been applied to PbS CQD thin films for the analysis of charge transport properties. Linear excitation intensity responses of PCR signals were found in the reported experimental conditions. The type and influence of trap states in the coupled PbS CQD thin film were analyzed with PCR temperature- and time-dependent results.     

Protecting and preserving clear barrier layers for flexible packaging materials In‐line thermal evaporation of organic topcoat layer

The end market for transparent flexible barrier films is larger than for metallized films. Presently, the market is still dominated by polymeric barrier layers but the used chemicals may be harmful for the environment. An alternative would be transparent thin layers deposited by vacuum deposition techniques using reactive processes. Ceramic materials like silicon oxide or aluminum oxide are used having a film thickness of just ～10 nm, a coating uniformity of +/?5% across and along the film at a barrier performance below 2.0 sccm/m²d for oxygen transmission rate (OTR) and below 1.0 g/m²d for water vapor transmission rate (WVTR) on PET substrates. In this paper, details will be provided about the deposition processes for these barrier layers using thermal evaporation, plasma‐assisted thermal evaporation as well as deposition by electron beam evaporation. An important factor for these high barrier transparent coatings is also to withstand the downstream processes in the whole packaging stream like slitting, lamination, printing etc. One solution is to protect the barrier layers by a Topcoat. For example, off‐line deposition of lacquers is used in field but the market penetration is low due to high process and material costs. An in‐situ Topcoat deposition is a smart solution to overcome this issue saving time and costs. Such an approach will be also described in the presentation and the impact on the performance of the final package will be discussed.     

Relaxation Losses of Magnetic Excitations in Nanoscale Films of Yttrium Iron Garnet

Relaxation losses of magnetic excitations in nanoscale films of Y₃Fe₅O₁₂ (YIG) were studied. The films were obtained by laser molecular-beam epitaxy (LMBE). Ferromagnetic resonance linewidth ΔH was found to increase sharply as the temperature decreased from 300 to 77 K. The observed growth of ΔH is explained by typical relaxation processes caused by the presence of Fe²⁺ ions. This effect is not observed in thick films of YIG grown by liquid-phase epitaxy and containing Pb⁴⁺ ions, and, hence, we have concluded that the presence of acceptor ions in YIG films obtained by LMBE will facilitate decreasing the concentration of Fe²⁺ ions and, a result, diminishing relaxation losses.     

Atom probe tomography of nanoscale architectures in functional materials for electronic and photonic applications

Microscopy has played a central role in the advancement of nanoscience and nanotechnology by enabling the direct visualization of nanoscale structure, leading to predictive models of novel physical behaviors. Electronic and photonic device technologies, whose features and performance are often improved through miniaturization, have particularly benefited from new capabilities in the characterization of material structure and composition. This paper reviews recent applications of atom probe tomography to semiconducting materials with nanoscale architectures that are designed to impart novel properties and device functionality by virtue of their shape and size. A review is necessary because rapid advances in atom probe instrumentation and analysis in the last decade have greatly expanded the utility of atom probe tomography to address scientific questions and technical questions in this area. The paper is organized in terms of the surface topologies of nanoscale architectures. We begin with nominally planar interfaces including thin film heterostructures and superlattices with open surfaces. Distinctive capabilities in the analysis of interfaces are introduced, as are challenges arising from measurement artifacts. We then discuss nanowires and nanowire heterostructures with surfaces that are closed along one dimension, for which atom probe tomography has provided unique and important understandings on the doping processes. Finally, we consider nanocrystals and quantum dots with completely closed surfaces. Along the way, current challenges and opportunities for atom probe tomography are highlighted, and the reader is directed to complementary reviews of more technical aspects of atom probe analysis.