Room temperature fracture toughness along with compressive deformation behavior at both room and high temperatures (900 °C, 1000 °C and 1100 °C) has been evaluated for ternary or quaternary hypoeutectic (Nb–12Si–5Mo and Nb–12Si–5Mo–20Ti) and hypereutectic (Nb–19Si–5Mo and Nb–19Si–5Mo–20Ti) Nb-silicide based intermetallic alloys to examine the effects of composition, microstructure, and annealing (100 hours at 1500 °C). On Ti-addition and annealing, the fracture toughness has increased by up to ~ 75 and ~ 63 pct, respectively with ~ 14 MPa√m being recorded for the annealed Nb–12Si–5Mo–20Ti alloy. Toughening is ascribed to formation of non-lamellar eutectic with coarse Nbss, which contributes to crack path tortuosity by bridging, arrest, branching and deflection of cracks. The room temperature compressive strengths are found as ~ 2200 to 2400 MPa for as-cast alloys, and ~ 1700 to 2000 MPa after annealing with the strength reduction being higher for the hypoeutectic compositions due to larger Nbss content. Further, the compressive ductility has varied from 5.7 to 6.5 pct. The fracture surfaces obtained from room temperature compression tests have revealed evidence of brittle failure with cleavage facets and river patterns in Nbss along with its decohesion at non-lamellar eutectic. The compressive yield stress decreases with increase in test temperature, with the hypoeutectic alloys exhibiting higher strength retention indicating the predominant role of solid solution strengthening of Nbss. The flow curves obtained from high temperature compression tests show initial work hardening, followed by a steady state regime indicating dynamic recovery involving the formation of low angle grain boundaries in the Nbss, as confirmed by electron backscattered diffraction of the annealed Nb–12Si–5Mo alloy compression tested at 1100 °C.
This article describes a subgradient-based near-optimal heuristic algorithm designed for minimizing the search of links that need to be added to an existing telecommunications network to enhance the survivability and routability of the network. 相似文献
A new alternating double aquo-bridged and single cyano-bridged polymeric complex {[Ba2(phen)4(H2O)6Fe(CN)6]·Cl·2(phen)·3H2O}n (1) (phen = 1,10-phenanthroline) has been synthesized and structurally characterized. In the crystal structure the two centrosymmetric [Ba2(phen)4(H2O)6] units are bridged through two trans CN groups of [Fe(CN)6]3− ion, which results in the formation of a zig-zag polymeric chain. In each [Ba2(phen)4(H2O)6] unit, the two Ba centers are joined by double aquo bridges. Both the Ba atoms are 9-coordinated with distorted mono-capped square antiprismatic geometry. An elaborate hydrogen bonding system holds the parallel polymeric chains together. 相似文献
Arsenic contamination of rice plants by arsenic-polluted irrigation groundwater could result in high arsenic concentrations in cooked rice. The main objective of the study was to estimate the total and inorganic arsenic intakes in a rural population of West Bengal, India, through both drinking water and cooked rice. Simulated cooking of rice with different levels of arsenic species in the cooking water was carried out. The presence of arsenic in the cooking water was provided by four arsenic species (arsenite, arsenate, methylarsonate or dimethylarsinate) and at three total arsenic concentrations (50,?250 or 500?µg?l?1). The results show that the arsenic concentration in cooked rice is always higher than that in raw rice and range from 227 to 1642?µg?kg?1. The cooking process did not change the arsenic speciation in rice. Cooked rice contributed a mean of 41% to the daily intake of inorganic arsenic. The daily inorganic arsenic intakes for water plus rice were 229, 1024 and 2000?µg?day?1 for initial arsenic concentrations in the cooking water of 50, 250 and 500?µg?arsenic?l?1, respectively, compared with the tolerable daily intake which is 150?µg?day?1. 相似文献
The operation of the mid-wave infrared (MWIR) HgCdTe cylindrical electron injection avalanche photodiode (e-APD) is described.
The measured gain and excess noise factor are related to the collection region fill factor. A two-dimensional diffusion model
calculates the time-dependent response and steady-state pixel point spread function for cylindrical diodes, and predicts bandwidths
near 1 GHz for small geometries. A 2 μm diameter spot scan system was developed for point spread function and crosstalk measurements at 80 K. An electron diffusion
length of 13.4 μm was extracted from spot scan data. Bandwidth data are shown that indicate bandwidths in excess of 300 MHz for small unit
cells geometries. Dark current data, at high gain levels, indicate an effective gain normalized dark density count as low
as 1000 counts/μs/cm2 at an APD gain of 444. A junction doping profile was determined from capacitance–voltage data. Spectral response data shows
a gain-independent characteristic. 相似文献
Controlled and effective p-type doping is a key ingredient forin situ growth of high performance HgCdTe photodiode detectors. In this paper, we present a detailed study of p-type doping with
two arsenic precursors in metalorganic chemical vapor deposition (MOCVD) of HgCdTe. Doping results from a new precursortris-dimethylaminoarsenic (DMAAs), are reported and compared to those obtained from tertiarybutylarsine (TBAs). Excellent doping
control has been achieved using both precursors in the concentration range of 3 × 1015-5 × 1017 cm−3 which is sufficient for a wide variety of devices. Arsenic incorporation efficiency for the same growth temperature and partial
pressure is found to be higher with DMAAs than with TBAs. For doping levels up to 1 × 1017 cm−3, the alloy composition is not significantly affected by DMAAs. However, at higher doping levels, an increase in the x-value
is observed, possibly as a result of surface adduct formation of DMAAs dissociative products with dimethylcadmium. The activation
of the arsenic as acceptors is found to be in the 152–50% range for films grown with DMAAs following a stoichiometric anneal.
However, a site transfer anneal increases the acceptor activation to near 100%. Detailed temperature dependent Hall measurements
and modeling calculations show that two shallow acceptor levels are involved with ionization energies of 11.9 and 3.2 meV.
Overall, the data indicate that DMAAs results in more classically behaved acceptor doping. This is most likely because DMAAs
has a more favorable surface dissociation chemistry than TBAs. Long wavelength infrared photodiode arrays were fabricated
on P-on-n heterojunctions, grownin situ with iodine doping from ethyl iodide and arsenic from DMAAs on near lattice matched CdZnTe (100) substrates. At 77K, for
photodiodes with 10.1 and 11.1 (im cutoff wavelengths, the average (for 100 elements 60 × 60 μm2 in size) zero-bias resistance-area product, R0A are 434 and 130 ohm-cm2, respectively. Quantum efficiencies are ≥50% at 77K. These are the highest R0A data reported for MOCVDin situ grown photodiodes and are comparable to state-of-the-art LPE grown photodiodes processed and tested under identical conditions. 相似文献
In situ Al-4.5Cu-5TiB2 composite has been processed through stir casting method, in which, the TiB2 particles have been precipitated in situ by mixed salt route involving reactions between K2TiF6 and KBF4.The as-cast specimens containing 20 volume percent liquid content have been subjected to three mushy state roll passes, each leading to 5 percent reduction in thickness. The grain structure has been found to be globular in the mushy state rolled composites. Measurements along the cross-section have shown decrease in average grain size and increase in hardness, as one proceeds along the direction of rolling. On the other hand, grain size and hardness have been found to be more or less similar, when compared for sections perpendicular to the rolling direction. 相似文献