施工过程中腐蚀隐患的控制

通过分析石化装置施工过程中常见的现象,分析产生由这些现象加重腐蚀的原因和机理, 指出应加强施工过程中的控制,而达到预期的防腐蚀效果,消除腐蚀隐患。     

非稳定井流模型的半解析解

为了提高非稳定渗流计算的计算精度 ,通过数学分析得到了水位传导系数随时间变化时 ,一类非稳定渗流井流模型的半解析解 ,并进行了计算比较     

Comments on "An efficient PML implementation for the ADI-FDTD method"

For original paper see Wang and Teixeira (IEEE Microwave Wireless Comp. Lett., vol.13, p.72-4, 2003 February). In this paper, a more precise way to evaluate the actual performance of the perfectly matched layer (PML) used for the alternating direction implicit finite-difference time-domain (ADI-FDTD) method is presented. It is shown that the intrinsic numerical dispersion error of the ADI-FDTD method must be taken into account when the actual performance of the ADI-PML (as well as the ADI-FDTD method) is evaluated. Most importantly, it is demonstrated that the ADI-PMLs implemented with either the traditional manner or the way proposed in have almost the same level of accuracy when the performance of the ADI-PML is correctly evaluated.     

阜阳地区石炭-二叠系煤系烃源岩特征

阜阳地区石炭-二叠系煤系地层发育，但由于勘探程度较低，对该区煤系地层烃源岩的生烃潜力认识不清，严重制约了该区的油气勘探。在已有资料的基础上，通过有机地球化学和有机岩石学方法并结合模拟实验，探讨了该区煤系烃源岩的生烃潜力。研究结果表明阜阳地区石炭-二叠系煤系烃源岩有机质丰度达到中等-好烃源岩标准，有机质类型以腐殖型为主，盆地模拟结果显示阜阳地区石炭-二叠系煤系地层油资源量为（30.47~152.33）×10⁶t，气资源量为（266.7～1333.7）×10⁸m³，展示阜阳地区石炭-二叠系煤系地层具有较好的生油气潜力。     

Preparation, patterning and luminescent properties of nanocrystalline Gd2O3:A (A=Eu, Dy, Sm, Er) phosphor films via Pechini sol–gel soft lithography

Nanocrystalline Gd₂O₃:A (A=Eu³⁺, Dy³⁺, Sm³⁺, Er³⁺) phosphor films and their patterning were fabricated by a Pechini sol–gel process combined with a soft lithography. X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM) and optical microscopy, UV/vis transmission and photoluminescence (PL) spectra as well as lifetimes were used to characterize the resulting films. The results of XRD indicated that the films began to crystallize at 500 °C and that the crystallinity increased with the elevation of annealing temperatures. Uniform and crack free non-patterned phosphor films were obtained by optimizing the composition of the coating sol, which mainly consisted of grains with an average size of 70 nm and a thickness of 550 nm. Using micro-molding in capillaries technique, we obtained homogeneous and defects-free patterned gel and crystalline phosphor films with different stripe widths (5, 10, 20 and 50 μm). Significant shrinkage (50%) was observed in the patterned films during the heat treatment process. The doped rare earth ions (A) showed their characteristic emission in crystalline Gd₂O₃ phosphor films due to an efficient energy transfer from Gd₂O₃ host to them. Both the lifetimes and PL intensity of the rare earth ions increased with increasing the annealing temperature from 500 to 900 °C, and the optimum concentrations for Eu³⁺, Dy³⁺, Sm³⁺, Er³⁺ were determined to be 5, 0.25, 1 and 1.5 mol% of Gd³⁺ in Gd₂O₃ films, respectively.     

抗乙肝病毒表面抗原PreS1(20-47)的单链抗体在转基因烟草根分泌物中的初步表达

为探索利用植物根分泌表达重组蛋白的可行性，构建了含有抗乙肝病毒表面抗原PreS1(20—47)单链抗体(ScFv)基因的表达载体。该ScFv基因转化烟草后在烟草根部细胞的细胞质和内质网中获得表达。实验结果表明，5’端融合ER导向信号肽的重组ScFv可通过根分泌表达。     

SDCCH信道话务量评估及最佳配置

本比较详细地阐述了SDCCH信道话务量的计算方法及在GSM网络中的配置原则，以便使网络资源达到最佳配置，发挥最大的经济效益。在论述中提出了3种方法：(1)建立SDCCH信道话务模型的方法；(2)评估SDCCH信道话务量的计算方法；(3)选择SDCCH信道最佳配置的方法。这3种方法供大家参考。     

An evolutionary algorithm for large traveling salesman problems

This work proposes an evolutionary algorithm, called the heterogeneous selection evolutionary algorithm (HeSEA), for solving large traveling salesman problems (TSP). The strengths and limitations of numerous well-known genetic operators are first analyzed, along with local search methods for TSPs from their solution qualities and mechanisms for preserving and adding edges. Based on this analysis, a new approach, HeSEA is proposed which integrates edge assembly crossover (EAX) and Lin-Kernighan (LK) local search, through family competition and heterogeneous pairing selection. This study demonstrates experimentally that EAX and LK can compensate for each other's disadvantages. Family competition and heterogeneous pairing selections are used to maintain the diversity of the population, which is especially useful for evolutionary algorithms in solving large TSPs. The proposed method was evaluated on 16 well-known TSPs in which the numbers of cities range from 318 to 13509. Experimental results indicate that HeSEA performs well and is very competitive with other approaches. The proposed method can determine the optimum path when the number of cities is under 10,000 and the mean solution quality is within 0.0074% above the optimum for each test problem. These findings imply that the proposed method can find tours robustly with a fixed small population and a limited family competition length in reasonable time, when used to solve large TSPs.     

天然气吸附储存脱附过程的动态模拟

通过热动力学计算,认识了脱附过程当中储罐内温度剖面分布的典型特征:储罐轴心处的温度下降幅度最大。分析了脱附过程当中储罐壁的热交换、吸附剂的导热系数以及储罐内的初始压力对储罐内的温度剖面的影响。结论是加强储罐外壁的热交换、增大吸附剂的导热系数皆能改善吸附储罐内的温度剖面。     

Reliability investigation of 0.07-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel

The authors have investigated the reliability performance of G-band (183 GHz) monolithic microwave integrated circuit (MMIC) amplifiers fabricated using 0.07-/spl mu/m T-gate InGaAs-InAlAs-InP HEMTs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel on 3-in wafers. Life test was performed at two temperatures (T/sub 1/ = 200 /spl deg/C and T/sub 2/ = 215 /spl deg/C), and the amplifiers were stressed at V/sub ds/ of 1 V and I/sub ds/ of 250 mA/mm in a N/sub 2/ ambient. The activation energy is as high as 1.7 eV, achieving a projected median-time-to-failure (MTTF) /spl ap/ 2 /spl times/ 10/sup 6/ h at a junction temperature of 125 /spl deg/C. MTTF was determined by 2-temperature constant current stress using /spl Delta/G/sub mp/ = -20% as the failure criteria. The difference of reliability performance between 0.07-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel and 0.1-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with In/sub 0.6/Ga/sub 0.4/As channel is also discussed. The achieved high-reliability result demonstrates a robust 0.07-/spl mu/m pseudomorphic InGaAs-InAlAs-InP HEMT MMICs production technology for G-band applications.