Control of structure and tack properties of acrylic pressure‐sensitive adhesives designed by a polymerization process

Free radical emulsion polymerization of methyl methacrylate (MMA) and 2‐ethylhexyl acrylate (EHA) results in the synthesis of pressure‐sensitive adhesives (PSAs) with good tack properties. Management of both the copolymer composition and the polymerization process allows one to control the behavior of the PSA. Semicontinuous (SC) processes create polymer particles whose instantaneous composition is close to that of the feed particle The SC Mixture process (continuous feeding with comonomer blends) affords nearly homogeneous latex particles and PSA films. The SC Gradient process (separate feedings at inversely varying rates) affords heterogeneous particles and films. The Batch process leads to somewhat heterogeneous films, but the hard (MMA‐rich) microdomains are made compatible with their soft (EHA‐rich) matrix because of the assumed formation of tapered‐type copolymers. Tack measurements indicate the importance of the particle and film structures. Too much hardness or softness leads to unacceptable lacks of adhesion and cohesion, respectively. Homogeneous structures prove adequate, but their tack properties collapse with rising temperature. Heterogeneous structures, with extensive phase segregation, prove unsatisfactory because they lack adhesion and cohesion. Finally, the association of well‐balanced composition and compatible heterogeneity is the criterion for suitable PSA behavior. © 2003 Wiley Periodicals, Inc. J Appl Polym Sci 89: 2749–2756, 2003     

A One‐Kilobit PQR‐CMOS Smart Pixel Array

The photonic quantum ring (PQR) laser is a three dimensional whispering gallery (WG) mode laser and has anomalous quantum wire properties, such as microampere to nanoampere range threshold currents and √T‐dependent thermal red shifts. We observed uniform bottom emissions from a 1‐kb smart pixel chip of a 32×32 InGaAs PQR laser array flip‐chip bonded to a 0.35 µm CMOS‐based PQR laser driver. The PQR‐CMOS smart pixel array, now operating at 30 MHz, will be improved to the GHz frequency range through device and circuit optimization.     

A QoS management framework for distributed multimedia systems

This paper proposes a high‐performance connection management architecture to design a common QoS framework applied to an ATM network based on the Open Distributed Processing (ODP) concept. We design the QoS framework in accordance from the RM‐ODP information and computational viewpoints. Copyright © 2003 John Wiley & Sons, Ltd.     

Examination of the role of oxygen in the photografting of methacrylic acid on a polyethylene film with a mixed solvent consisting of water and organic solvents

The photografting of methacrylic acid (MAA) on a linear low‐density polyethylene film (thickness = 30 μm) under air and nitrogen atmospheres was investigated at 60°C in mixed solvents consisting of water and an organic solvent, with xanthone as a photoinitiator. The organic solvents used were acetone, methanol, tetrahydrofuran, and dioxane. A maximum percentage of grafting occurred at a certain concentration of the organic solvent in the mixed solvent. This was observed for the systems under both air and nitrogen. The grafting reaction under air exhibited an induction period, but the rate of grafting after the period was greater than that under nitrogen. The formation of poly(ethylene peroxide)s by photoirradiation seemed to be a factor for the accelerated photografting under air. On the basis of attenuated total reflection infrared spectroscopy and scanning electron microscopy of the grafted film, the MAA‐grafted chains of the sample prepared under air tended to penetrate more deeply inside the film than those of the sample prepared under nitrogen. The resulting grafted films exhibited a pH‐responsive character: the grafted films shrank in an acidic medium but swelled in alkaline medium. This was evaluated from measurements of dimensional changes in the grafted films. © 2003 Wiley Periodicals, Inc. J Appl Polym Sci 89: 992–998, 2003     

Monolithic SiGe Up‐/Down‐Conversion Mixers with Active Baluns

The purpose of this paper is to describe the implementation of monolithically matching circuits, interface circuits, and RF core circuits to the same substrate. We designed and fabricated on‐chip 1 to 6 GHz up‐conversion and 1 to 8 GHz down‐conversion mixers using a 0.8 µm SiGe hetero‐junction bipolar transistor (HBT) process technology. To fabricate a SiGe HBT, we used a reduced pressure chemical vapor deposition (RPCVD) system to grow a base epitaxial layer, and we adopted local oxidation of silicon (LOCOS) isolation to separate the device terminals. An up‐conversion mixer was implemented on‐chip using an intermediate frequency (IF) matching circuit, local oscillator (LO)/radio frequency (RF) wideband matching circuits, LO/IF input balun circuits, and an RF output balun circuit. The measured results of the fabricated up‐conversion mixer show a positive power conversion gain from 1 to 6 GHz and a bandwidth of about 4.5 GHz. Also, the down‐conversion mixer was implemented on‐chip using LO/RF wideband matching circuits, LO/RF input balun circuits, and an IF output balun circuit. The measured results of the fabricated down‐conversion mixer show a positive power conversion gain from 1 to 8 GHz and a bandwidth of about 4.5 GHz.     

Computational Implementation of Asymmetric Integral Imaging by Use of Two Crossed Lenticular Sheets

We propose an asymmetric integral imaging method to adjust the resolution and depth of a three‐dimensional image. Our method is obtained by use of two lenticular sheets with different pitches fabricated under the same F/#. The asymmetric integral imaging is the generalized version of integral imaging, including both conventional integral imaging and one‐dimensional integral imaging. We present experimental results to test and verify the performance of our method computationally.     

A Silicon–Silica Nanocomposite Material

The synthesis and characterization of a novel silicon–silica nanocomposite material are reported. A self‐assembly method allows the encapsulation of silicon nanoclusters within the channels of a periodic mesoporous silica thin film. The result is the formation of a silicon–silica nanocomposite film with bright, room‐temperature photoluminescence in the visible range, and a nanosecond luminescence lifetime. The properties of the nanocomposite material have been studied by several analytical techniques, which collectively show the existence within the channels of non‐diamondoid‐structure‐type silicon nanoclusters with various hydrogenated silicon sites. It is estimated that the silicon nanoclusters in the silica mesoporous films occupy up to 39 % of the accessible pore volume. The nanocomposite film shows improved resistance to air oxidation compared to crystalline silicon. The high loading and chemical stability to oxidation under ambient conditions are important advantages in terms of the development of silicon‐based light‐emitting diodes from this class of materials.