Deterministic Polymorphic Engineering of MoTe2 for Photonic and Optoelectronic Applications

Developing selective and coherent polymorphic crystals at the nanoscale offers a novel strategy for designing integrated architectures for photonic and optoelectronic applications such as metasurfaces, optical gratings, photodetectors, and image sensors. Here, a direct optical writing approach is demonstrated to deterministically create polymorphic 2D materials by locally inducing metallic 1T′-MoTe₂ on the semiconducting 2H-MoTe₂ host layer. In the polymorphic-engineered MoTe₂, 2H- and 1T′- crystalline phases exhibit strong optical contrast from near-infrared to telecom-band ranges (1–1.5 µm), due to the change in the band structure and increase in surface roughness. Sevenfold enhancement of third harmonic generation intensity is realized with conversion efficiency (susceptibility) of ≈1.7 × 10⁻⁷ (1.1 × 10⁻¹⁹ m² V⁻²) and ≈1.7 × 10⁻⁸ (0.3 × 10⁻¹⁹ m² V⁻²) for 1T′ and 2H-MoTe₂, respectively at telecom-band ultrafast pump laser. Lastly, based on polymorphic engineering on MoTe₂, a Schottky photodiode with a high photoresponsivity of 90 AW⁻¹ is demonstrated. This study proposes facile polymorphic engineered structures that will greatly benefit realizing integrated photonics and optoelectronic circuits.     

The Effect of Gradual Fluorination on the Properties of FnZnPc Thin Films and FnZnPc/C60 Bilayer Photovoltaic Cells

Motivated by the possibility of modifying energy levels of a molecule without substantially changing its band gap, the impact of gradual fluorination on the optical and structural properties of zinc phthalocyanine (F_nZnPc) thin films and the electronic characteristics of F_nZnPc/C₆₀ (n = 0, 4, 8, 16) bilayer cells is investigated. UV–vis measurements reveal similar Q‐ and B‐band absorption of F_nZnPc thin films with n = 0, 4, 8, whereas for F₁₆ZnPc a different absorption pattern is detected. A correlation between structure and electronic transport is deduced. For F₄ZnPc/C₆₀ cells, the enhanced long range order supports fill factors of 55% and an increase of the short circuit current density by 18%, compared to ZnPc/C₆₀. As a parameter being sensitive to the organic/organic interface energetics, the open circuit voltage is analyzed. An enhancement of this quantity by 27% and 50% is detected for F₄ZnPc‐ and F₈ZnPc‐based devices, respectively, and is attributed to an increase of the quasi‐Fermi level splitting at the donor/acceptor interface. In contrast, for F₁₆ZnPc/C₆₀ a decrease of the open circuit voltage is observed. Complementary photoelectron spectroscopy, external quantum efficiency, and photoluminescence measurements reveal a different working principle, which is ascribed to the particular energy level alignment at the interface of the photoactive materials.     

Shape‐Assisted 2D MOF/Graphene Derived Hybrids as Exceptional Lithium‐Ion Battery Electrodes

Herein, a novel polymer‐templated strategy is described to obtain 2D nickel‐based MOF nanosheets using Ni(OH)₂, squaric acid, and polyvinylpyrrolidone (PVP), where PVP has a dual role as a structure‐directing agent, as well as preventing agglomeration of the MOF nanosheets. Furthermore, a scalable method is developed to transform the 2D MOF sheets to Ni₇S₆/graphene nanosheet (GNS) heterobilayers by in situ sulfidation using thiourea as a sulfur source. The Ni₇S₆/GNS composite shows an excellent reversible capacity of 1010 mAh g^?1 at 0.12 A g^?1 with a Coulombic efficiency of 98% capacity retention. The electrochemical performance of the Ni₇S₆/GNS composite is superior not only to nickel sulfide/graphene‐based composites but also to other metal disulfide–based composite electrodes. Moreover, the Ni₇S₆/GNS anode exhibits excellent cycle stability (≈95% capacity retention after 2000 cycles). This outstanding electrochemical performance can be attributed to the synergistic effects of Ni₇S₆ and GNS, where GNS serves as a conducting matrix to support Ni₇S₆ nanosheets while Ni₇S₆ prevents restacking of GNS. This work opens up new opportunities in the design of novel functional heterostructures by hybridizing 2D MOF nanosheets with other 2D nanomaterials for electrochemical energy storage/conversion applications.     

Demonstration of the monolithic interconnection on CIS solar cells by picosecond laser structuring on 30 by 30 cm2 modules

In this paper, we present the selective structuring of all three patterns (P1, P2 and P3) of a monolithic interconnection of CIS (Cu(In,Ga)(S,Se)₂) thin film solar cells by picosecond laser pulses at a wavelength of 1064 nm. We show results for single pulse ablation threshold values and line scribing of molybdenum films on glass (P1), CIS on molybdenum (P2) and zinc oxide on CIS (P3). The purposes of these processes are the p‐type isolation (P1), cell interconnect (P2) and n‐type isolation (P3), which are required for complete cell architecture. The half micron thick molybdenum back electrode can be structured with a process speed of more than 15 m/s at about 15 W average power without detectable residues and damage by direct induced laser ablation from the back side (P1). The CIS layer can be structured selectively down to the molybdenum at process speeds up to 1 m/s at about 15 W average power, due to the precision of direct laser ablation in the ultrashort pulse regime (P2). The ZnO front electrode layer is separated by clean trenches with straight side walls at process speeds of up to 15 m/s at about 10 W average power, as a result of indirect induced laser ablation (P3). A validation of functionality of all processes is demonstrated on CIS solar cell modules (30 × 30 cm²). By replacing one state‐of‐the‐art process by a picosecond laser process at a time, solar efficiencies could be increased for P1 and P2 and stayed on a similar level for P3. After an optimization of the patterning processes in the R&D pilot line of AVANCIS, we achieved a new record efficiency for an all‐laser‐patterned CIS solar module: 14.7% as best value for the aperture area efficiency of a 30 × 30 cm² sized CIS module was reached. Copyright © 2014 John Wiley & Sons, Ltd.     

A monolithically integrated high‐efficiency Cu(In,Ga)Se2 mini‐module structured solely by laser

Monolithically integrated Cu(In,Ga)Se₂ mini‐modules were fabricated in order to reduce the width of patterning related dead area. The Cu(In,Ga)Se₂ layers were prepared on soda‐lime glasses using the multistage process at low substrate temperature below 500 °C. A picosecond laser with a wavelength of 532 nm was used for all of the structuring processes (P1, P2, and P3) for the monolithic integration. A “lift‐off” type structuring was applied for P1 and P3, and an “ablation” type was for P2. The laser structuring was optimized to be minimizing the dead area width, and the width of about 70 µm was successfully achieved. A mini‐module, in which the optimized structuring processes were applied for the integration, demonstrated a certified efficiency of 16.6%. Copyright © 2015 John Wiley & Sons, Ltd.     

Highly Robust Indium‐Free Transparent Conductive Electrodes Based on Composites of Silver Nanowires and Conductive Metal Oxides

A hybrid approach for the realization of In‐free transparent conductive layers based on a composite of a mesh of silver nanowires (NWs) and a conductive metal‐oxide is demonstrated. As metal‐oxide room‐temperature‐processed sol–gel SnO_x or Al:ZnO prepared by low‐temperature (100 °C) atomic layer deposition is used, respectively. In this concept, the metal‐oxide is intended to fuse the wires together and also to “glue” them to the substrate. As a result, a low sheet resistance down to 5.2 Ω sq^‐1 is achieved with a concomitant average transmission of 87%. The adhesion of the NWs to the substrate is significantly improved and the resulting composites withstand adhesion tests without loss in conductivity. Owing to the low processing temperatures, this concept allows highly robust, highly conductive, and transparent coatings even on top of temperature sensitive objects, for example, polymer foils, organic devices. These Indium‐ and PEDOT:PSS‐free hybrid layers are successfully implemented as transparent top‐electrodes in efficient all‐solution‐processed semitransparent organic solar cells. It is obvious that this approach is not limited to organic solar cells but will generally be applicable in devices which require transparent electrodes.     

4D Biofabrication: 3D Cell Patterning Using Shape‐Changing Films

A novel approach for fabrication of 3D cellular structures using new thermosensitive shape‐changing polymer films with photolithographically patterned surface—4D biofabrication is reported. The surface of shape‐changing polymer films is patterned to selectively adsorb cells in specific regions. The 2D cell pattern is converted to the 3D cell structure after temperature‐induced folding of the polymer films. This approach has a great potential in the field of tissue engineering and bioscaffolds fabrication.     

Charge transfer in thin films of donor–acceptor complexes studied by infrared spectroscopy

The degree of charge transfer in thin films of organic charge transfer (CT)-complexes, which are deposited via thermal evaporation, is examined via infrared-spectroscopy. We demonstrate a linear relationship between the shift in the excitation energy of the CN-stretching mode of CT-complexes with the acceptor 7,7,8,8-tetracyanoquinodimethane (TCNQ) and the charge transfer. The measured correlation corresponds very well with DFT calculations. For Na-TCNQ we observe a splitting in the peak of the CN-stretching mode, which can be explained by the coupling of two modes and was confirmed by the calculations. In CT-complexes with partial charge transfer the appearance of an electronic excitation is demonstrated.     

离子注入后品圆清洗带来的材料和掺杂剂损失的测量

对45nm及以下技术节点的逻辑器件嗣造来说,经过次数不断增加的高剂量离子注入光阻层的清洗步骤后,仍保持超浅结（USJ）的完整性非常重要。在PMOS区采用SiGe带来了材料方面的又—挑战。一种新型短循环法可精确测量各种去胶储洗工艺造成的非晶硅或SiGe的损失量。     

Investigation of the impact of the rear‐dielectric/silver back reflector design on the optical performance of thin‐film silicon solar cells by means of detached reflectors

Thin‐film silicon solar cells often rely on a metal back reflector separated from the silicon layers by a thin rear dielectric as a back reflector (BR) design. In this work, we aim to obtain a better insight into the influence of the rear‐dielectric/Ag BR design on the optical performance of hydrogenated microcrystalline silicon (µc‐Si:H) solar cells. To allow the application of a large variety of rear dielectrics combined with Ag BRs of diverse topographies, the solar cell is equipped with a local electrical contact scheme that enables the use of non‐conductive rear dielectrics such as air or transparent liquids of various refractive indices n. With this approach, detached Ag BRs having the desire surface texture can be placed behind the same solar cell, yielding a direct and precise evaluation of their impact on the optical cell performance. The experiments show that both the external quantum efficiency and the device absorptance are improved with decreasing n and increasing roughness of the BR. Calculations of the angular intensity distribution of the scattered light in the µc‐Si:H are presented. They allow for establishing a consistent picture of the light trapping in the solar cell. Copyright © 2013 John Wiley & Sons, Ltd.