A practical procedure to assess critical defects in pressure vessels subjected to fatigue loads

PSA pressure vessels are equipments used in refining industries for cleaning the hydrogen upcoming from the reforming or hydrogen generation unities. In one regular inspection, some embedded cracks were found in the entrance nozzle-head weld. Then, instead of advance its decommissioning and waste much time until the refinery purchase a new vessel, a structural stress analysis using the finite element method was performed in order to obtain the stress field at the site of the crack, considering the real loading cycle. Despite the acting load is only the internal pressure, the nozzle-head weld is a region where a complex stress state is present (bending and axial stresses). ASME VIII Division 2, Appendix 5 addresses this issue by applying a rule for multiaxial fatigue life estimation for non-proportional loading. With ASME estimated fatigue life results, it was applied the British Standard 7910 procedure to decide if the equipment can operate safely. The calculation also assesses the crack growing by using a modified bi-linear Paris law. Finally, it was computed how long the cracks would take to get to their critical size and then retire definitively the equipment.     

Electrochemical characterization of alternate conducting carbazole-bisthiophene units

An electrochemical and theoretical character of alternate copolymer of carbazole and bithiophene units was investigated. Polymerization is processed as two steps bielectronic oxidation of molecule. With monoelectronic oxidation is connected stable radical cation with spin located mainly on carbazole. The electrochemical properties of polymer are dependent on thickness of film deposited on electrode. In case of the thin layers one it is observed characteristic redox couple of carbazole oxidation to radical cation. Analysis of polymer behavior and results of spectrochemical measurements indicate on mixed type of electroconductivity.Molecular structures, HOMO-LUMO gaps and nature of highest occupied and lowest unoccupied molecular orbitals were also studied in presented work for oligomers ranging from monomer to octamer. The studies applied density functional theory (DFT).     

When public opposition defeats alternative water projects - The case of Toowoomba Australia

Located approximately 100 km west of Brisbane, Toowoomba is home to approximately 95,000 people. Surface water from dams is the main source of water for the city. In 2006 the residents of Toowoomba were invited to vote in a referendum (plebiscite) concerning whether or not an indirect potable wastewater reuse scheme should be constructed to supply additional water to the area. At that stage dam levels in Toowoomba were at approximately twenty percent of capacity. Toowoomba residents, after intense campaigning on both sides of the referendum debate, voted against the proposal. In July 2008 dam levels dropped to eleven percent. Stage 5 water restrictions have been in place since September 2006, subsequently mains water must not be used for any outdoor uses. This paper describes in detail how public opposition in the case of Toowoomba's referendum, defeated the proposal for a water augmentation solution. Reasons for the failure are analysed. In so doing, the paper provides valuable insights with respect to public participation in indirect potable reuse proposals, and discusses factors including politics, vested interest and information manipulation. This paper is significant because of the lack of detailed information published about failed water infrastructure projects.     

PNET “ONDM 2019” special issue

Photonic Network Communications -     

Mapping the Density of States Distribution of Organic Semiconductors by Employing Energy Resolved–Electrochemical Impedance Spectroscopy

Although the density of states (DOS) distribution of charge transporting states in an organic semiconductor is vital for device operation, its experimental assessment is not at all straightforward. In this work, the technique of energy resolved–electrochemical impedance spectroscopy (ER-EIS) is employed to determine the DOS distributions of valence (highest occupied molecular orbital (HOMO)) as well as electron (lowest unoccupied molecular orbital (LUMO)) states in several organic semiconductors in the form of neat and blended films. In all cases, the core of the inferred DOS distributions are Gaussians that sometimes carry low energy tails. A comparison of the HOMO and LUMO DOS of P3HT inferred from ER-EIS and photoemission (PE) or inverse PE (IPE) spectroscopy indicates that the PE/IPE spectra are by a factor of 2–3 broader than the ER-EIS spectra, implying that they overestimate the width of the distributions. A comparison of neat films of MeLPPP and SF-PDI₂ or PC(61)BM with corresponding blends reveals an increased width of the DOS in the blends. The results demonstrate that this technique does not only allow mapping the DOS distributions over five orders of magnitude and over a wide energy window of 7 eV, but can also delineate changes that occur upon blending.     

Dielectric–Semiconductor Interface Limits Charge Carrier Motion at Elevated Temperatures and Large Carrier Densities in a High‐Mobility Organic Semiconductor

The fundamental nature of charge transport in highly ordered organic semiconductors is under constant debate. At cryogenic temperatures, effects within the semiconductor such as traps or the interaction of charge carriers with the insulating substrate (dipolar disorder or Fröhlich polarons) are known to limit carrier motion. In comparison, at elevated temperatures, where charge carrier mobility often also decreases as function of temperature, phonon scattering or dynamic disorder are frequently discussed mechanisms, but the exact microscopic cause that limits carrier motion is debated. Here, the mobility in the temperature range between 200 and 420 K as function of carrier density is explored in highly ordered perylene‐diimide from 3 to 9 nm thin films. It is observed that above room temperature increasing the gate electric field or decreasing the semiconducting film thickness leads to a suppression of the charge carrier mobility. Via X‐ray diffraction measurements at various temperatures and electric fields, changes of the thin film structure are excluded as cause for the observed mobility decrease. The experimental findings point toward scattering sites or traps at the semiconductor–dielectric interface, or in the dielectric as limiting factor for carrier mobility, whose role is usually neglected at elevated temperatures.     

Seminar zum systematischen Erfinden

SciencenewsTriz*-Check up

Seminar zum systematischen Erfinden     

Bandwidth Control and Symmetry Breaking in a Mott-Hubbard Correlated Metal

In Mott materials strong electron correlation yields a spectrum of complex electronic structures. Recent synthesis advancements open realistic opportunities for harnessing Mott physics to design transformative devices. However, a major bottleneck in realizing such devices remains the lack of control over the electron correlation strength. This stems from the complexity of the electronic structure, which often veils the basic mechanisms underlying the correlation strength. This study presents control of the correlation strength by tuning the degree of orbital overlap using picometer-scale lattice engineering. This study illustrates how bandwidth control and concurrent symmetry breaking can govern the electronic structure of a correlated SrVO₃ model system. This study shows how tensile and compressive biaxial strain oppositely affect the SrVO₃ in-plane and out-of-plane orbital occupancy, resulting in the partial alleviation of the orbital degeneracy. The spectral weight redistribution under strain is derived and explained, which illustrates how high tensile strain drives the system toward a Mott insulating state. Implementation of such concepts can push correlated electron phenomena closer toward new solid-state devices and circuits. These findings therefore pave the way for understanding and controlling electron correlation in a broad range of functional materials, driving this powerful resource for novel electronics closer toward practical realization.     

Modification of physicochemical properties of actin filaments suppresses cell fragmentation in the execution phase of staurosporine-induced apoptotic processes

Effects of jasplakinolide (JSP), a stabilizer of F-actin, and latrunculin A (LTA), a destabilizer of F-actin, on a series of events occurring in the execution phase of staurosporine (STS)-induced apoptotic processes were studied using human osteosarcoma 143B cells. Time-dependent apparent increases of the population of cells with collapsed membrane potential of mitochondria (Delta Psi(m)) caused by STS treatment were not due to actual decreases in the Delta Psi(m) per cell, but due to the fragmentation of cells resulting in decreases in the number of active mitochondria per cell. Decreases in the Delta Psi(m) in fragmented cells occurred late in the execution phase. Both JSP and LAT failed to prevent STS-induced release of cytochrome c from mitochondria followed by the activation of caspases 3 and 9, the cleavage of poly (ADP-ribose) polymerase (PARP) and apoptotic nuclear fragmentation. However, both drugs prevented STS-induced apoptotic cell fragmentation and decreases in the Delta Psi(m). These results indicate that physicochemical states of actin filaments play a certain role in the execution phase of STS-induced apoptotic processes.     

A two‐phase combined QoS‐based handoff scheme in a wireless ATM network

We describe the QoS‐based rerouting algorithm that is designed to implement a two‐phase inter‐switch handoff scheme for wireless ATM networks. We propose to use path extension for each inter‐switch handoff, and invoke path optimization when the handoff path exceeds the delay constraint or maximum path extension hops constraint. We study three types of path optimization schemes: combined QoS‐based, delay‐based and hop based path rerouting schemes. Copyright © 2001 John Wiley & Sons, Ltd.