Effects of External Stress on Defect Annihilation and Bubble Swelling During Annealing of Neutron-Irradiated Silicon Carbide

Silicon carbide ceramics fabricated by three different methods were neutron-irradiated in the Japan Materials Testing Reactor and were subsequently annealed free from stresses or under compressive external stresses. The macroscopic length monotonically decreased with annealing above the irradiation temperature, when annealing was performed below ∼1300°C. This decrease was not affected by the external stresses. However, annealing above ∼1300°C led to an increase in length in B-containing SiC. The expansion was caused by the formation and growth of He bubbles at grain boundaries. The growth occurred by flow of vacancies into bubbles. The compressive stress retarded the expansion along the loading direction. This retardation was compensated by a length incrase along the lateral direction. The effect of external stresses was discussed by considering differently oriented He bubbles. One bubble was stress favored and the other stress unfavored. The stress determined the diffusional flow of vacancy-He atom complexes between the favored and unfavored bubbles which were caused by anisotropic expansion under a directional stress.     

Introduction of local tensile strain on Ge substrates by SiGe stressors selectively grown on wet chemically recessed regions for strained Ge-nMOSFETs

Introduction of tensile strain into Ge substrates was demonstrated by forming embedded SiGe stressors on the recessed regions formed by an anisotropic wet chemical etching process for strained Ge-nMOSFETs having high electron mobility. A damage-free and well controlled anisotropic wet chemical etching process is developed in order to avoid plasma-induced damages in a conventional RIE process. The uni-axial tensile strain over 1% near the Ge recess-edge regions, which is induced by the embedded SiGe stressors, is also demonstrated for the first time. These results suggest that higher electron mobility than the upper-limit for a Si-MOSFET is obtainable in short channel strained Ge-nMOSFETs with the embedded SiGe stressors.     

Improvement of Electrical Contact Between TE Material and Ni Electrode Interfaces by Application of a Buffer Layer

A single ??-structure thermoelectric (TE) module based on p-type NaCo₂O₄, n-type Mg₂Si, and Ni electrode was fabricated by the spark plasma sintering (SPS) method. The NaCo₂O₄ powder was synthesized by using a metal?Ccitric acid complex decomposition method. Bulk Mg₂Si prepared by melt quenching was ground into a powder and sieved to particle size of 75???m or less. To obtain a sintered body of NaCo₂O₄ or Mg₂Si, the powder was sintered using SPS. Pressed Ni powder or mixed powder consisting of Ni and SrRuO₃ powder was inserted between these materials and the Ni electrode in order to connect them, and electrical power was passed through the electrodes from the SPS equipment. The open-circuit voltage (V _OC) values of a single module in which TE materials were connected to the Ni electrodes by using pressed Ni powder was 82.7?mV, and the maximum output current (I _max) and maximum output power (P _max) were 212.4?mA and 6.65?mW at ??T?=?470?K, respectively. On the other hand, V _OC of a single module in which TE materials and an Ni electrode were connected with a mixed powder (Ni:SrRuO₃?=?6:4 volume fraction) was 109?mV, and I _max and P _max were 4034?mA and 109?mW at ??T?=?500?K, respectively. These results indicate that the resistance at the interface between the TE materials and the Ni electrode can be decreased and the output power can be increased by application of a buffer layer consisting of Ni and SrRuO₃.     

Assessing material qualities and efficiency limits of III–V on silicon solar cells using external radiative efficiency

The paper presents a quantitative approach to the investigation and comparison of the material qualities of III–V on silicon (III–V/Si) solar cells by using external radiative efficiencies. We use this analysis to predict the limiting efficiencies and evaluate the criteria of material quality in order to achieve high‐efficiency III–V/Si solar cells. This result yields several implications for the design of high‐efficiency III–V/Si solar cells. Copyright © 2016 John Wiley & Sons, Ltd.     

High-Density Frenkel Defects as Origin of N-Type Thermoelectric Performance and Low Thermal Conductivity in Mg3Sb2-Based Materials

Mg₃Sb₂-based intermetallic compounds with exceptionally high thermoelectric performance exhibit unconventional n-type dopability and anomalously low thermal conductivity, attracting much attention to the underlying mechanisms. To date, investigations have been limited to first-principle calculations and thermodynamic analysis of defect formation, and detailed experimental analysis on crystal structure and phonon modes has not been achieved. Here, a synchrotron X-ray diffraction study clarifies that, against a previous view of a simple crystal structure with a small unit cell, Mg₃Sb₂ is inherently a heavily disordered material with Frenkel defects, charge-neutral defect complexes of cation vacancies and interstitials. Ionic charge neutrality preserved in Mg₃Sb₂ is responsible for exotic n-type dopability, which is unachievable for other Zintl phase materials. The thermal conductivity of Mg₃Sb₂ exhibits deviation from the standard T⁻¹ temperature dependency with strongly limited phonon transport due to a strain field. Inelastic X-ray scattering measurement reveals enhanced phonon scattering induced by disorder. The results will draw renewed attention to crystal defects and disorder as means to explore new high-performance thermoelectric materials.     

In situ high-resolution transmission electron microscopy of photocatalytic reactions by excited electrons in ionic liquid

A transmission electron microscope (TEM) sample for observing photocatalysis in a liquid was prepared by using N,N,N-trimetyl-N-propylammonium-bis(trifluoromethanesulfonyl)imide. The ionic liquid (IL) was used as a reaction solvent. Tetrachloroauric acid was dissolved in the IL as gold ion species. Rutile particles were added in the solution as a photocatalyst. The low vapor pressure of the IL enables a diffusing system in high vacuum of TEM. Rutile particles were UV irradiated in that liquid phase. After 3 h UV irradiation, a gold particle of 8 nm diameter was grown on the TiO2 surface. Photonucleation of Au/TiO2 system was discussed from the high-resolution TEM images.     

A 16-ns 1-Mb CMOS EPROM

A 16-ns 1-Mb CMOS EPROM has been developed utilizing high-speed circuit technology and a double-metal process. In order to achieve the fast access time, a differential sensing scheme with address transition detection (ATD) is used. A double-word-line structure is used to reduce word-line delay. High noise immunity is obtained by a bit-line bias circuit and data-latch circuit. Sufficient threshold voltage shift (indispensable for fast access time) is guaranteed by a threshold monitoring program (TMP) scheme. The array is organized as 64 K×16 b, which is suitable for 32-b high-performance microprocessors. The active power is 425 mW, the programming time is 100 μs, and the chip size is 4.94×15.64 mm²     

Structural and electronic properties of CuInSe2

Structural investigation on monocrystalline CuInSe₂ samples has been made. From the single crystal results, the space group of CuInSe₂ was confirmed to be Iˉ42d and the crystal solidification direction was investigated. Compositional uniformity of the ingots was established by EPMA and it was found that the indium concentration was greater than that for copper. Systematic annealing experiments were carried out in vacuum at different temperatures (as low as 160° C) and for different times. Large variation in resistivity was observed after the annealing treatment. P-type samples were found to convert to n-type after the heat-treatments.     

Characteristics of ions impacting grid surfaces in an ion engine

Numerical evaluations of grid erosions in ion engines are required to estimate the lifetimes of long-term space missions. In this study, to investigate the characteristics of ions colliding with neutrals and impacting the accel grid surface, including ions that collide with neutrals more than once, three-dimensional particle analyses using a full-PIC (Particle in Cell) code were performed. The distributions of erosion by charge-exchanged ions show periodic patterns. The multiple-collided ion constitutes 7 and 8% of the accel grid current to the inner and downstream surfaces, respectively. The energy of the multiple-collided ion impacting the downstream surface has a broader distribution than that of the charge-exchanged ion. These results suggest the importance of investigating multiple-collided ions in high-accuracy quantitative evaluations of grid erosion.     

Temperature accelerated life test on commercial concentrator III–V triple‐junction solar cells and reliability analysis as a function of the operating temperature

A temperature accelerated life test on commercial concentrator lattice‐matched GaInP/GaInAs/Ge triple‐junction solar cells has been carried out. The acceleration of the aging has been accomplished by subjecting the solar cells at temperatures markedly higher than the nominal working temperature inside a concentrator, and the nominal photo‐current condition (820 X) has been emulated by injecting current in darkness. Three tests at different temperatures have been carried out. The failure distributions across the three test temperatures have been fitted to an Arrhenius–Weibull model. An Arrhenius activation energy of 1.59 eV was determined from the fit. The reliability functions and parameters of these solar cells at two nominal working conditions (80 and 100 °C) have been obtained. In both cases, the instantaneous failure rate function monotonically increases, that is, the failures are of the wear‐out kind. We have also observed that the reliability data are very sensitive to the nominal temperature condition. In fact, at a nominal working condition of 820 X and 80 °C, assuming that the concentration module works 5 h per day, the warranty time obtained for a failure population of 5% has been 113 years. However, for a nominal working condition of 820 X and 100 °C, the warranty time obtained for a failure population of 5% has been 7 years. Therefore, in order to offer a long‐term warranty, the working temperature could be a key factor in the design of the concentration photovoltaic systems. Copyright © 2014 John Wiley & Sons, Ltd.