Fracture response of fibre-reinforced materials with macro/microcrack damage using the Boundary Element Technique

The Boundary Element Method (BEM) incorporating the Embedded Cell Approach (ECA) has been used to analyse the effects of constituent material properties, fibre spatial distribution and microcrack damage on the localised behaviour of transversely fractured, unidirectional fibre-reinforced composites. Three specific composites, i.e., glass fibre reinforced polyester, carbon fibre reinforced epoxy and a glass-carbon hybrid, are considered. The geometrical structures examined were perfectly periodic, uniformly spaced fibre arrangements in square and hexagonal embedded cells. In addition, numerical simulations were also conducted using embedded cells containing randomly distributed fibres. The models involve both elastic fibres and matrix, with the interfaces between the different phases being fully bonded. The results indicate that the constituent material properties (two phase composite) and spatial distribution have a significant effect on the localised stress distributions around the primary crack tip. However, the strain energy release rate associated with crack propagation is predominantly influenced by the material composition. The three-phase hybrid composite exhibited an apparent intermediate fracture toughness value, compared to the all-glass and all-carbon models. Furthermore, the strain energy release rate for the macrocrack lowers as it enters a zone of localised damage (microcracking). The presence of microcracks relaxes the stress field, which can result in a significant reduction in the energetics of the primary crack.     

Improving narrow bandgap a-SiGe:H alloys grown by hot-wire chemical vapor deposition

We have improved the electronic properties of narrow-bandgap (Tauc gap below 1.5 eV) amorphous-silicon germanium alloys (a-SiGe:H) grown by hot-wire chemical vapor deposition (HWCVD) by lowering the substrate temperature and deposition rate. Prior to this work, we were unable to grow a-SiGe:H alloys with bandgaps below 1.5 eV that had photo-to-dark conductivity ratios comparable with our plasma-enhanced CVD (PECVD) grown materials [B.P. Nelson et al., Mater. Res. Soc. Symp. 507 (1998) 447]. Decreasing the filament diameter from our standard configuration of 0.5 mm to 0.38 or 0.25 mm provides first big improvements in the photoresponse of these alloys. Lowering the substrate temperature from our previous optimal temperatures (T_sub starting at 435 °C) to at 250 °C provides additional photo-to-dark conductivity ratio increasing by two orders of magnitude for growth conditions containing 20–30% GeH₄ in the gas phase (relative to the total GeH₄+SiH₄ flow).     

A Donor–Acceptor Polymer with a Peculiar Negative‐Charge‐“Trapping” Characteristic

Voltammetric and spectrophotometric measurements of poly(3,3″‐dipentoxy‐3′‐dicyanoethenyl‐2,2′:5′,2″‐terthiophene) (polyCN) films, in connection with other experimental evidence, reveal a normal oxidative, but a peculiar reductive behavior consisting of trapping of the negative charge during the cathodic scan. Another interesting property of polyCN films is the tendency to form strong intramolecular and intermolecular associations, probably charge‐transfer (CT) complexes. These properties could account for the fact that the photovoltaic performance does not improve when polyCN is blended with a polythiophene donor.     

实时GPS定位中的自适应故障检测

给出了一种GPS卡尔曼滤波的自适应方案,该方案能根据GPS导航中变化的动态来估计协方差.当增强卡尔曼滤波器时,方案可得到更精确的定位修正.此外,也可将此估计方法用于完整监测,以增强故障检测的阈值选择.采用模拟数据验证了提出方法的正确性.     

Personal telecommunication radiation safety and the precautionary principle

The approach to risk management for RF and microwave radiation has been to establish guidelines for maximum permissible levels of exposure. These guidelines are based on evaluations of the relevant scientific literature and, with safety margins to account for uncertainties and gaps in scientific knowledge, offer a significant level of protection against established hazards of RF and microwave radiation for short-term exposures. One can argue, on this basis, that the precautionary principle - specifically, safety factors -have been used to guide the making and promulgation of existing permissible-exposure standards for RF and microwave radiation. Therefore, discussions on the appropriateness of the precautionary principle for RF radiation may be "much ado about nothing". Clearly, this approach to "pre caution" neither has stifled technological development, nor has it helped to enforce the acceptance of zero risk, but it provided a basis for action when science was unable to give a clear answer.     

Surface effects in nanocrystalline silicon

Exposure to ammonia (NH₃) increases the dark current (DC) in nanocrystalline silicon. Light soaking (LS) for short periods also enhances the dark current, which remains at a high value for a long time. Pumping alone is unable to restore the initial annealed state, but annealing brings it back. The final state obtained by LS and NH₃ exposure depends on the order in which they are performed. Evaporated selenium (Se) deposited on nanocrystalline silicon decreases the DC. These effects cannot be explained entirely by the presence of a-Si : H alone, in our sample. DC and photoluminescence (PL) measurements indicate the presence of two types of center in our sample, which behave differently when exposed to NH₃.