Maturing,Technology-Based,Born-Global Companies: Surviving Through Mergers and Acquisitions

To date, there has been little research about the corporate growth of born-global companies and relatively little data exist about their maturation, survival as independent companies (or failure to do so) and their international strategies. The present paper is based on an empirical study of Israeli technology-based companies that were identified in the late 1990s as born global. We collected data about the continuing development of these firms for the decade spanning 2000–2009. Our findings show that maturing technology-based, born-global companies can increase their chances of survival by acquiring other firms. Although such acquisitions do not increase profits, they allow born-global firms to continue increasing their sales and to expand and upgrade their product line, which in turn increases their chances of remaining independent. The data also show that if the firms prefer to merge with another company, they are in a better position if they do not acquire any other firms beforehand. Finally, our data show that although the majority of born-global companies can continue operations if they survived the first decade, they are not highly successful on the measures of growth and shareholder wealth. One of the recommendations of this study is that for maturing, technology-based, born-global companies to remain successful, they must be more aggressive in their M&A strategy than they are at the moment.     

The intrinsic electrical equivalent circuit of a laser diode

The basic electrical equivalent circuit of a laser diode is derived. The effects of spontaneous emission and self-pulsations are included. It is found that self-pulsations are represented by a negative resistance in the model. Application of this model suggests purely electronic methods of suppressing relaxation oscillations in laser diodes.     

Low threshold Be implanted (GaAl)As laser on semi-insulating substrate

Be implanted stripe geometry double heterostructure lasers have been fabricated on a semi-insulating GaAs substrate, with threshold currents as low as 15 mA for a cavity length of 100 μm. The laser has been monolithically integrated with a metal-semiconductor field-effect transistor.     

Parametric MRI of Water Diffusion in Breast Cancer

Diffusion MRI studies revealed specific morphological and physiological properties of MCF7 tumors implanted in the mammary gland of immunodeficient mice. These tumors mimic the histological and pathophysiological properties of human breast cancer in patients. The experiments were conducted by (1) applying varying diffusion gradient strengths, G_d, from 0 to 20 G/cm and a short diffusion time (t_d = 16 ms) in order to minimize the effect of restriction and exchange of water between the intra- and extracellular compartments, and (2) applying a strong constant gradient and diffusion times up to 96 ms, revealing water restriction and exchange. The normalized signal intensity was plotted against the diffusion weighting factor b , taking into account interaction with the imaging gradients. The curves were analyzed by applying a bi-exponential decay function assuming two exchanging water compartments, with fast and slow diffusion coefficients. The amplitudes and decay constants of the two exponents, a fast and a slow one, were related to the fraction and apparent diffusion coefficients of the extra- and intracellular water, respectively, considering contributions of restriction and exchange. During tumor progression the distribution of the diffusion parameters for the same experimental protocol varied and became less homogeneous. This was predominantly due to variations in the cellularity and increased necrosis. Upon treatment of the tumors with a new anti-estrogenic drug, tamoxifen methiodide, the changes in the diffusion parameters indicated increased cell swelling. Hence, this cytostatic response to treatment was detected before actual cell death was apparent. The potential capacity of diffusion MRI is of high clinical relevance and may help improve the noninvasive diagnosis and followup of treatment of this devastating disease.     

Single-carrier-type dominated impact ionisation in multilayer structures

A new structure for III-V avalanche photodetectors in which multiplication is dominated by a single-carrier type is proposed. Calculations for a GaAs-AlGaAs detector are reported predicting multiplication dominated by electrons. The reason for this is that electrons are injected into GaAs multiplication layers from high-electric-field AlGaAs layers, while holes are injected into the GaAs layers from low-electric-field AlGaAs layers.     

Growth and properties of Hg1-x Cdx Te epitaxial layers

The growth of epitaxial layers of mercury-cadmium-telluride (Hg_1-xCd_xTe) with relatively low x (0.2-0.3) from Te-rich solutions in an open tube sliding system is studied. The development of a semiclosed slider system with unique features permits the growth of low x material at atmospheric pressure. The quality of the films is improved by the use of Cd_1-yZ_yTe and Hg_1-xCd_xTe substrates instead of CdTe. The substrate effects and the growth procedure are discussed and a solidus line at a relatively low temperature is reported. The asgrown epitaxial layers are p-type with hole concentration of the order of 1·10¹⁷ cm⁻³, hole mobility of about 300 cm²·V⁻¹ sec⁻¹ and excess minority carrier life-time of 3 nsec, at 77 K.     

Vertical cavity lasers for telecom applications

The authors review the development of long-wavelength vertical cavity lasers (VCLs) for telecommunications applications. Long-wavelength VCLs provide an attractive choice for inexpensive fiber optic communication. The different designs of such lasers are presented, along with the advantages and disadvantages of each. System requirements and experiments are also presented at 2.5 Gb/s over 200 km of optical fiber     

Room-temperature continuous-wave operation of 1.54-μmvertical-cavity lasers

We report on the room-temperature continuous-wave operation of vertical-cavity lasers operating at 1.54 μm. The devices use a 7 strain-compensated quantum-well active layer sandwiched between two Al(Ga)As-GaAs quarter-wave mirrors joined by wafer fusion. Five device sizes between 8 and 20 μm were found to operate continuously at room temperature (23°C), The lowest room-temperature continuous-wave threshold current of 2.3 mA was measured on an 8-μm diameter device, while the highest continuous-wave operating temperature of 33°C was measured on a 12-μm device     

Treatment of Posttraumatic Stress Symptoms in Adolescent Survivors of Childhood Cancer and Their Families: A Randomized Clinical Trial.

Posttraumatic stress symptoms (PTSS), particularly intrusive thoughts, avoidance, and arousal, are among the most common psychological aftereffects of childhood cancer for survivors and their mothers and fathers. We conducted a randomized wait-list control trial of a newly developed 4-session, 1-day intervention aimed at reducing PTSS that integrates cognitive-behavioral and family therapy approaches-the Surviving Cancer Competently Intervention Program (SCCIP). Participants were 150 adolescent survivors and their mothers, fathers, and adolescent siblings. Significant reductions in intrusive thoughts among fathers and in arousal among survivors were found in the treatment group. A multiple imputations approach was used to address nonrandom missing data and indicated that treatment effects would likely have been stronger had more distressed families been retained. The data are supportive of brief interventions to reduce PTSS in this population and provide additional support for the importance of intervention for multiple members of the family. (PsycINFO Database Record (c) 2010 APA, all rights reserved)