LTE小区间干扰抑制技术介绍及比较

主要介绍了LTE目前采用的干扰抑制的方法,说明了这些干扰抑制方法对抑制小区间干扰,提高系统性能的作用,并比较了不同方法的优劣。     

A 6 Gbps/pin Low‐Power Half‐Duplex Active Cross‐Coupled LVDS Transceiver with Switched Termination

A novel linear switched termination active cross‐coupled low‐voltage differential signaling (LVDS) transceiver operating at 1.5 GHz clock frequency is presented. On the transmitter side, an active cross‐coupled linear output driver and a switched termination scheme are applied to achieve high speed with low current. On the receiver side, a shared preamplifier scheme is employed to reduce power consumption. The proposed LVDS transceiver implemented in an 80 nm CMOS process is successfully demonstrated to provide a data rate of 6 Gbps/pin, an output data window of 147 ps peak‐to‐peak, and a data swing of 196 mV. The power consumption is measured to be 4.2 mW/pin at 1.2 V.     

基于FNN的PID非线性系统位置控制

针对数学模型不确定的某操瞄控制系统的控制问题，特别是滞环因素给系统的控制精度造成的不利影响，提出了一种基于Takagi-Sugeno模型的模糊神经网络(FINN)和比例积分微分(PID)控制的位置控制器和一种基于实数编码的遗传算法优化模型，运用该优化模型优化了控制器参数。仿真结果表明，该控制器具有较好的鲁棒性，采用这种控制器，系统能够高精度、快速、平稳地调转到指定的位置。     

CE/SE方法在点火管一维两相流数值计算中的应用

介绍了CE／SE方法。该方法不同于以往的一些计算格式，在计算中它把时间和空间同等对待，具有格式构造简单、计算方便和对激波间断分辨率高等优点。运用适合点火管一维两相流控制方程的CE／SE方法来计算点火管内的一维两相流流动，源项采用四阶Runge-Kutta方法进行处理。数值计算的结果与实验数据的比较表明，CE／SE方法能对两相流进行有效的数值模拟。     

多级液压缸换级缓冲仿真方法研究

某型号在作战流程中,导弹完成快速起竖后需将发射架快速回收到位,发射架起竖、下放时间及过程中的冲击响应对型号的作战准备时间及发射安全性有重要影响,多级起竖液压缸在发射架快速回收过程换级时会产生较大的冲击振动,为解决这一问题,液压缸在换级时研制了节流缓冲装置。针对此技术开展仿真方法研究,对液压系统起竖回路及缓冲装置进行了理论分析,基于某型号多级起竖液压缸建立机械液压联合仿真模型,通过与试验数据的对比,验证了该仿真方法的正确性,对控制流程优化和液压系统缓冲参数的确定具有指导作用。     

Ge n-MOSFETs on lightly doped substrates with high-/spl kappa/ dielectric and TaN gate

In this letter, we report successful fabrication of germanium n-MOSFETs on lightly doped Ge substrates with a thin HfO/sub 2/ dielectric (equivalent oxide thickness /spl sim/10.8 /spl Aring/) and TaN gate electrode. The highest peak mobility (330 cm/sup 2//V/spl middot/s) and saturated drive current (130 /spl mu/A/sq at V/sub g/--V/sub t/=1.5 V) have been demonstrated for n-channel bulk Ge MOSFETs with an ultrathin dielectric. As compared to Si control devices, 2.5/spl times/ enhancement of peak mobility has been achieved. The poor performance of Ge n-MOSFET devices reported recently and its mechanism have been investigated. Impurity induced structural defects are believed to be responsible for the severe degradation.     

移动通信业务安全综述

本文通过分析移动通信业务所面临的各类安全威胁,提出了移动通信业务安全架构,并对业务安全总体架构、业务应用安全各层实现、手机终端安全、用户卡安全等技术进行了具体的介绍.     

Crumpled integrated AMC antenna

The performance of a dual-band textile antenna integrated with an artificial magnetic conductor under bending and crumpling conditions is presented. Both input impedance and radiation patterns are investigated based on numerical and experimental methods at 2.45 and 5.8 GHz.     

基于近似模型的电子封装散热结构优化设计

针对封装散热结构优化问题中存在的难点,提出了一种基于近似模型和随机模拟的快速全局优化方法.利用Kriging方法建立封装散热结构的近似模型,重构原始的优化问题,采用随机模拟对重构出的目标函数进行寻优,从而得到最优解.采用CVT试验设计,使Kriging模型的泛化预测能力达到最大程度的发挥;在随机模拟中采用Quasi-Monte Carlo法,有效地提高了寻优的效率.以方形扁平封装器件为例,应用该方法实现了封装散热结构的优化,结果表明所提出的方法有效地解决了设计变量中含有离散变量的问题,并且大大提高了随机模拟优化的计算效率.