UNICORE 6 — Recent and Future Advancements

UNICORE is a European Grid Technology with more than 10 years of history. Originating from the Supercomputing domain, the latest version UNICORE 6 has turned into a general-purpose Grid technology that follows established standards and offers a rich set of features to its users. The paper starts with an architectural insight into UNICORE 6, highlighting the workflow features, standards and the different clients. Next, the current state of advancement is presented by describing recent developments. The paper closes with an outlook on future planned developments.     

0.18μm铜金属双重镶嵌工艺中空间成像套刻精度分析

由于空间成像套刻(Overlay)技术的预算随集成电路(IC)设计规范的紧缩而吃紧,因此,Overlay测量技术准确度的重要意义也随之提高。通过对后开发(AfterDevelopDI)阶段和后蚀刻(AfterEtchFI)阶段的Overlay测量结果进行比较,研究了0.18μm设计规范下的铜金属双重镶嵌工艺过程中的Overlay准确度。在确保对同一个晶圆进行后开发(DI)阶段和后蚀刻(FI)阶段测试的条件下,我们对成品晶圆的5个工艺层进行了比较。此外,还利用CD-SEM(线宽-扫描电子显微镜)测量了某个工艺层(PolyGate)上的芯片内Overlay,并与采用分割线方法的光学Overlay测量结果进行了比较。发现对芯片内overlay的校准存在着严重的局限性,即在应用CD-SEM时缺乏合适的结构进行Overlay测量。我们还将继续为大家提供定量的比较结果,同时也会向大家推荐组合的CD-SEM测量结构,使其能够被应用到今后的光刻设计中。     

Interdigitated back‐contact heterojunction solar cell concept for liquid phase crystallized thin‐film silicon on glass

We present an interdigitated back‐contact silicon heterojunction system designed for liquid‐phase crystallized thin‐film (~10 µm) silicon on glass. The preparation of the interdigitated emitter (a‐Si:H(p)) and absorber (a‐Si:H(n)) contact layers relies on the etch selectivity of doped amorphous silicon layers in alkaline solutions. The etch rates of a‐Si:H(n) and a‐Si:H(p) in 0.6% NaOH were determined and interdigitated back‐contact silicon heterojunction solar cells with two different metallizations, namely Al and ITO/Ag electrodes, were evaluated regarding electrical and optical properties. An additional random pyramid texture on the back side provides short‐circuit current density (j_SC) of up to 30.3 mA/cm² using the ITO/Ag metallization. The maximum efficiency of 10.5% is mainly limited by a low of fill factor of 57%. However, the high j_SC, as well as V_OC values of 633 mV and pseudo‐fill factors of 77%, underline the high potential of this approach. Copyright © 2015 John Wiley & Sons, Ltd.     

Performance of PKI-based security mechanisms in mobile ad hoc networks

Security for ad hoc network environments has received a lot of attention as of today. Previous work has mainly been focussing on secure routing, fairness issues, and malicious node detection. However, the issue of introducing and conserving trust relationships has received considerably less attention. In this article, we present a scalable method for the use of public key certificates and their revocation in mobile ad hoc networks (MANETs). With the LKN-ad hoc security framework (LKN-ASF) a certificate management protocol has been introduced, bringing PKI technology to MANETs. In addition a performance analysis of two different revocation approaches for MANETs will be presented.     

Analysis of the Stakeholder Engagement in the Deployment of Renewables and Smart Grid Technologies

The implementation of higher shares of renewables in a global energy mix has to be accompanied by simultaneous deployment of enabling smart grid technologies (SGTs). This combination will inevitably lead to a revolutionary change in a conventional energy system, particularly, the shifting role of consumers to prosumers. But resistance may arise from such a dramatic shift, since it is associated with high uncertainty in conjunction with increasing responsibilities of all stakeholders, the urgent need of effective control, and the development of a process. To ensure the positive influence, coherent actions of all players, and appropriate treatment of the spots of resistance, the analysis of the interplay between key stakeholders has been done. The paper introduces the framework for stakeholders' analysis, applies it on the European Union (EU) example, and provides recommendations to reduce the resistance of SGTs deployment.     

Densification of Oxide Nanoparticle Thin Films by Irradiation with Visible Light

A technique is presented that allows for altering of the physical characteristics of films of TiO₂ nanoparticles by exposure to visible light. In this technique, dye‐sensitized oxide nanoparticles are deposited on a substrate by dip‐coating. Photodissociation of the organic ligand layer leads to cross‐linking of the nanoparticles. Consequently, irradiated films have a decreased porosity, an increased index of refraction and an increased hydrophobicity. Films irradiated with green light are compared to films irradiated with UV light. Within experimental error, visible‐ and UV‐illumination induces the same changes in the films. The mechanism of surfactant elimination in dye‐sensitized oxide particles is discussed, patterning is demonstrated, and prospective applications of the technique are considered.     

Consideration of temperature and current stress testing on flip chip solder interconnects

This work discusses the experimental set-up and data interpretation for high temperature and current stress tests of flip chip solder joints using the four-point Kelvin measurement technique. The single solder joint resistance responses are measured at four different four-point Kelvin structure locations in a flip chip package. Various temperatures (i.e., 125–165 °C) and electric current (i.e., 0.6–1.0 A) test conditions are applied to investigate the solder joint resistance degradation behavior and its failure processes. Failure criterion of 20% and 50% joint resistance increases, corresponding to solder and interfacial voiding, are employed to evaluate the solder joint electromigration reliability. The absolute resistance value is substantially affected by the geometrical layout of the metal lines in the four-point Kelvin structure, and this is confirmed by finite element simulation.Different current flow directions and strengths yielded different joint resistance responses. The anode joint, where electrons flow from the die to the substrate, usually measured an earlier resistance increase than the cathode joint, where electrons flow in the opposite direction. The change in measured joint resistances can be related to solder and interfacial voiding in the solder joint except for ±1 A current load, where resistance drop mainly attributed to the broken substrate Cu metallization as a result of “hot-spot” phenomenon. The solder joint temperature increases above the oven ambient temperature by ～25 °C, ～40 °C and ～65 °C for 0.6 A, 0.8 A and 1.0 A stress current, respectively. It is found that two-parameter log-normal distribution gives a better lifetime data fitting than the two-parameter Weibull distribution. Regardless of failure criterion used, the anode joint test cells usually calculated a shorter solder joint mean life with a lower standard variation of 0.3–0.6, as compared to the cathode joint test cells with a higher standard variation of 0.8–1.2. For a typical flip chip solder joint construction, electromigration reliability is mainly determined by the under bump metallization consumption and dissolution, with intermetallic compound formation near the die side of an anode joint.     

TEM characterization of Si nanowires grown by CVD on Si pre-structured by nanosphere lithography

Silicon nanowires (SiNWs) were grown on Si(1 0 0) and Si(1 1 1) substrates by chemical vapour deposition (CVD) via the vapour–liquid–solid (VLS) mechanism with small gold particles used as seeds. In order to control the diameter of nanowires, their density on the substrate and their orientation we controlled the size and the distribution of Au seed particles. This was accomplished using nanosphere lithography (NSL) by which regular arrays of Au nanoparticles can be generated. This allowed us to grow single-crystalline SiNWs perpendicular to the surface of Si(1 1 1) substrates. The SiNWs and their Au caps were studied with respect to their morphology and composition using TEM, HREM and EFTEM methods. Clusters of Au are observed along the surface of SiNWs and the existence of a thin Si film on gold particles capping the SiNWs is demonstrated.