Bayesian belief network-based framework for sourcing risk analysis during supplier selection

Increasing trend in global business integration and movement of material around the world has caused supply chain system susceptible to disruption involving higher risks. This paper presents a methodology for supplier selection in a global sourcing environment by considering multiple cost and risk factors. Failure modes and effects analysis technique from reliability engineering field and Bayesian belief networks are used to quantify the risk posed by each factor. The probability and the cost of each risk are then incorporated into a decision tree model to compute the total expected costs for each supply option. The supplier selection decision is made based on the total purchasing costs including both deterministic costs (such as product and transportation costs) and the risk-associated costs. The proposed approach is demonstrated using an example of a US-based Chemical distributor. This framework provides a visual tool for supply chain managers to see how cost and risks are distributed across the different alternatives. Lastly, managers can calculate expected value of perfect information to avoid a certain risk.     

A stochastic model for the behavior of multiple TCP NewReno sources over optical burst switching network

This work proposes a stochastic model to characterize the transmission control protocol (TCP) over optical burst switching (OBS) networks which helps to understand the interaction between the congestion control mechanism of TCP and the characteristic bursty losses in the OBS network. We derive the steady-state throughput of a TCP NewReno source by modeling it as a Markov chain and the OBS network as an open queueing network with rejection blocking. We model all the phases in the evolution of TCP congestion window and evaluate the number of packets sent and time spent in different states of TCP. We model the mixed assembly process, burst assembler and disassembler modules, and the core network using queueing theory and compute the burst loss probability and end-to-end delay in the network. We derive expression for the throughput of a TCP source by solving the models developed for the source and the network with a set of fixed-point equations. To evaluate the impact of a burst loss on each TCP flow accurately, we define the burst as a composition of per-flow-bursts (which is a burst of packets from a single source). Analytical and simulation results validate the model and highlight the importance of accounting for individual phases in the evolution of TCP congestion window.     

Preparation of transparent and conducting carbon nanotube/N-hydroxymethyl acrylamide composite thin films by in situ polymerization

The preparation of optically transparent and electrically conductive composite thin films composed of multi-walled carbon nanotube (MWCNT) and poly N-hydroxymethyl acrylamide were fabricated by a simple in situ polymerization technique. The film displays conductivities up to 10³ S/m depending on the MWCNT loading and a sheet resistance as low as 53 Ω/□ for an optical transparency greater than 95% at 550 nm. The dispersability characteristics of the suspension were determined by measuring specific surface charge, rheological behavior and UV–vis spectra.     

Radiation hardness of the electrical properties of carbon nanotube network field effect transistors under high-energy proton irradiation

The effect of high-energy proton irradiation on the physical properties of carbon nanotubes (CNTs) was investigated. The focus of the study was on the electrical properties of single-walled carbon nanotube (SWNT) network devices exposed to proton beams. Field-effect transistors (FETs) of network type were fabricated using SWNTs and were then irradiated by high-energy proton beams of 10-35?MeV with a fluence of 4 × 10(10)-4 × 10(12)?cm(-2) that are comparable to the aerospace radiation environment. The electrical properties of both metallic and semiconducting CNT network FET devices underwent no significant change after the high-energy proton irradiation, indicating that the CNT network devices are very tolerant in proton beams. Raman spectra confirm the proton-radiation hardness of CNT network FET devices. The radiation hardness of CNT network FET devices promises therefore the potential usefulness of CNT-based electronics for future space application.