Decomposition of Fe5C2 catalyst particles in carbon nanofibers during TEM observation

The effect of an electron beam on nanoparticles of two Fe carbide catalysts inside a carbon nanofiber was investigated in a transmission electron microscope. Electron beam exposure does not result in significant changes for cementite (θ-Fe₃C). However, for Hägg carbide nanoparticles (χ-Fe₅C₂), explosive decay is observed after exposure for 5–10 s. This produces small particles of cementite and γ-Fe, each covered with a multilayer carbon shell, and significantly modifies the carbon-fiber structure. It is considered that the decomposition of Hägg carbide is mostly due to the damage induced by high-energy electron collisions with the crystal lattice, accompanied by the heating of the particle and by mechanical stress provided by the carbon layers of the nanofiber.     

Mineral Collecting in Russia

This brief survey of beryl, its crystallography and composition, its properties and special features, and its deposits, is based on the author's now out-of-print Emerald and Other Beryls (Chilton Book Co., 1981), to which the reader is referred for additional data and references to the extensive beryl literature as well as discussions of topics not undertaken herein. A shorter version of the above, edited by Peter G. Read, is entitled Beryl and is available from Butterworths Scientific Ltd.; it was published in 1986.     

Particle Adhesion to Drops

The adhesion of spheroidal particles to spherical drops is calculated and discussed in terms of an equilibrium-penetration index. The present study emphasizes the case of particles that are sufficiently large to affect the drop volume upon penetration. It is shown that the more elongated the particles, the steeper the dependence of the penetration index on the contact angle. The effect of line tension on nanoscale particles is considered. Positive line tensions increase the steepness of the dependence of penetration index on contact angle whereas negative line tensions decrease this dependence. In addition, the energy barrier caused by positive line tensions is presented and discussed.     

I2-doped and pyrrole ring-iodinated semi-conducting oligomers of N-vinyl-3-alkyl-2-phenylpyrroles

I₂-doped and pyrrole ring-iodinated semi-conducting oligomers of N-vinyl-3-alkyl-2-phenylpyrroles have been synthesized by free-radical polymerization of the above monomers (AIBN, 2–5 wt%, 60–80 °C) and further exposure of the oligomers obtained to I₂ vapor. The parent oligomers exhibit paramagnetic and fluorescent properties and stable up to 300–370 °C.     

A network of ontology networks for building e-employment advanced systems

This paper presents the development of a network of ontology networks that enables data mediation between the Employment Services (ESs) participating in a semantic interoperability platform for the exchange of Curricula Vitae (CVs) and job offers in different languages. Such network is formed by (1) a set of local ontology networks that are language dependent, in which each network represents the local and particular view that each ES has of the employment market; and (2) a reference ontology network developed in English that represents a standardized and agreed upon terminology of the European employment market. In this network each local ontology network is aligned with the reference ontology network so that search queries, CVs, and job offers can be mediated through these alignments from any ES. The development of the ontologies has followed the methodological guidelines issued by the NeOn Methodology and is focused mainly on scenarios that involve reusing and re-engineering knowledge resources already agreed upon by employment experts and standardization bodies. This paper explains how these methodological guidelines have been applied for building e-employment ontologies. In addition, it shows that the approach to building ontologies by reusing and re-engineering agreed upon non-ontological resources speeds the ontology development, reduces development costs, and retrieves knowledge already agreed upon by a community of people in a more formal representation.     

Estimating Internet Users' Demand Characteristics

We investigate two parametric approaches and one non-parametric approach toestimating Internet users' value-of-time, an important characteristic ofdemand for Internet services. The advantages of these approaches are madeclear and their limitations discussed. The models are tested with datagenerated from our similation model of the Internet economy. Given thecharacteristics of the data, we investigate parametric count-data modelsfirst. While reasonably good results are obtained on all medium- andlarge-sized jobs, the method fails on small-sized ones. Second, we develop anonparametric quasi-Bayesian update algorithm for retrieving the underlyingdistribution function of Internet users' value-of-time purely fromobservations on their choices. Compared with the parametric count-data models,good results are obtained in every case.     

Produktivitätssteigerung durch integrierte Produktionstechnik und Verfahrens-Know-how

Increasing Productivity through Integrated Production Engineering and Processing Expertise The future of production engineering is interdisciplinary. Between product innovation and product marketing there lies a design process which has to be optimised and which is interdisciplinary in character. The design process has to satisfy the demands of global markets on chemical products, which lead, for example, to shorter and shorter product life cycles, and to demands for low production costs, high and consistent product quality, and faster market launches.     

The Effect of an Fe-doped GaN Buffer on off-State Breakdown Characteristics in AlGaN/GaN HEMTs on Si Substrate

An Fe-doped GaN buffer layer was employed in the growth of AlGaN/GaN high-electron mobility transistors (HEMTs) on Si substrates. In order to investigate the effects of an Fe-doped GaN buffer on OFF-state breakdown characteristics, HEMT devices with an Fe-doped GaN buffer on Si substrates were fabricated along with conventional devices utilizing an unintentionally doped GaN buffer on Si substrates. The device characteristics were compared. While HEMT devices with the conventional structure showed an extremely unstable OFF-state breakdown behavior due to punchthrough to the Si substrate, it was demonstrated that an Fe-doped GaN buffer layer on a Si substrate successfully suppressed the premature failure caused by Si-induced breakdown. As a result, the AlGaN/GaN HEMTs with an Fe-doped GaN buffer on Si substrates exhibited much more consistent and enhanced breakdown voltages, when compared with the conventional devices. Consequently, it is highly desirable that AlGaN/GaN HEMTs on Si substrates have an Fe-doped GaN buffer layer in order to achieve stable and robust OFF-state breakdown characteristics