A mixed-signal RAM decision-feedback equalizer for disk drives

A mixed-signal RAM decision-feedback equalizer (DFE) that operates at 90 Mb/s is described. In the analog domain, the DFE subtracts intersymbol interference caused by the past four outputs. The equalized signal is fed into a nonuniform flash analog-to-digital converter (ADC) to produce the decision output and error signal used to adapt the RAM contents in the digital domain. With a 5 V supply voltage, the power dissipation is 260 mW during steady-state operation. The active area is 4.5 mm² in a 1 μm CMOS process     

Beamed microwave power transmission and its application to space

The general principles and special components of beamed microwave power transmission systems are outlined, and their application to the space program is discussed. For a beamed system starting with a DC source of power, converting it to a microwave beam for transmission through space, and ending with DC power output at the receiving end, an experimentally measured and certified DC-to-DC efficiency of 54% has been achieved. The application that is discussed in detail is a low-earth-orbit-to-geostationary-orbit (LEO to GEO) transportation system that depends on vehicles propelled by electric thrusters whose power is supplied by a microwave beam originating at the earth's surface. A scenario for such a system is chosen, and the performance results are presented. The advantages of the all electronic system over a chemically propelled system are enumerated. The principles of space propulsion, particularly as they relate to electric propulsion, are outlined. Key components at the terminals of the system are discussed. Environmental considerations are discussed     

Egg Thiamine Status of Lake Ontario Salmonines 1995–2004 with Emphasis on Lake Trout

Alewives (Alosa pseudoharengus), the major prey fish for Lake Ontario, contain thiaminase. They are associated with development of a thiamine deficiency in salmonines which greatly increases the potential for developing an early mortality syndrome (EMS). To assess the possible effects of thiamine deficiency on salmonine reproduction we measured egg thiamine concentrations for five species of Lake Ontario salmonines. From this we estimated the proportion of families susceptible to EMS based on whether they were below the ED20, the egg thiamine concentration associated with 20% mortality due to EMS. The ED20s were 1.52, 2.63, and 2.99 nmol/g egg for Chinook salmon (Oncorhynchus tshawytscha), lake trout (Salvelinus namaycush), and coho salmon (Oncorhynchus kisutch), respectively. Based on the proportion of fish having egg thiamine concentrations falling below the ED20, the risk of developing EMS in Lake Ontario was highest for lake trout, followed by coho (O. kisutch), and Chinook salmon, with the least risk for rainbow trout (O. mykiss). For lake trout from western Lake Ontario, mean egg thiamine concentration showed significant annual variability during 1994 to 2003, when the proportion of lake trout at risk of developing EMS based on ED20 ranged between 77 and 100%. Variation in the annual mean egg thiamine concentration for western Lake Ontario lake trout was positively related (p < 0.001, r² = 0.94) with indices of annual adult alewife biomass. While suggesting the possible involvement of density-dependent changes in alewives, the changes are small relative to egg thiamine concentrations when alewife are not part of the diet and are of insufficient magnitude to allow for natural reproduction by lake trout.     

Growth and characterization of GaAs films deposited on Ge/Si composite substrates by metalorganic chemical vapor deposition

We report the results of studies which have been made on heteroepitaxial layers of GaAs and AlGaAs grown by metalorganic chemical vapor deposition on composite substrates that consist of four different types of heteroepitaxial layered structures of Ge and Ge-Si grown by molecular beam epitaxy on (100)-oriented Si substrates. It is found that of the four structures studied, the preferred composite substrate is a single layer of Ge ∼1 μm thick grown directly on a Si buffer layer. The double-crystal X-ray rocking curves of 2 μm thick GaAs films grown on such substrates have FWHM values as small as 168 arc sec. Transmission electron micrographs of these Ge/Si composite substrates has shown that the number of dislocations in the Ge heteroepitaxial layer can be greatly reduced by an anneal at about 750° C for 30 min which is simultaneously carried out during the growth of the GaAs layer. The quality of the GaAs layers grown on these composite substrates can be greatly improved by the use of a five-period GaAs-GaAsP strained-layer superlattice (SLS). Using the results of these studies, low-threshold optically pumped AlGaAs-GaAs DH laser structures have been grown by MOCVD on MBE Ge/Si composite substrates.